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Resistive switching memories have garnered significant attention due to their high-density integration and rapid in-memory computing beyond von Neumann's architecture. However, significant challenges are posed in practical applications with respect to their manufacturing process complexity, a leakage current of high resistance state (HRS), and the sneak-path current problem that limits their scalability. Here, a mild-temperature thermal oxidation technique for the fabrication of low-power and ultra-steep memristor based on Ag/TiO x /SnO x /SnSe 2 /Au architecture is developed. Benefiting from a self-assembled oxidation layer and the formation/rupture of oxygen vacancy conductive filaments, the device exhibits an exceptional threshold switching behavior with high switch ratio exceeding 10 6 , low threshold voltage of ≈1 V, long-term retention of >10 4  s, an ultra-small subthreshold swing of 2.5 mV decade -1 and high air-stability surpassing 4 months. By decreasing temperature, the device undergoes a transition from unipolar volatile to bipolar nonvolatile characteristics, elucidating the role of oxygen vacancies migration on the resistive switching process. Further, the 1T1R structure is established between a memristor and a 2H-MoTe 2 transistor by the van der Waals (vdW) stacking approach, achieving the functionality of selector and multi-value memory with lower power consumption. This work provides a mild-thermal oxidation technology for the low-cost production of high-performance memristors toward future in-memory computing applications., (© 2024 The Author(s). Advanced Science published by Wiley‐VCH GmbH.)

We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considered: high vacuum (HV), O 2 , N 2 , and air. The devices exposed to O 2 and N 2 for 2 h performed in a manner similar to that of the device kept in HV. However, the device exposed to air for 2 h exhibited significantly better electrical properties than its counterparts. The average and highest carrier mobility of the 70 air-exposed C8-BTBT TFTs were 4.82 and 8.07 cm 2 V -1 s -1 , respectively. This can be compared to 2.76 cm 2 V -1 s -1 and 4.70 cm 2 V -1 s -1 , respectively, for the 70 devices kept in HV. Furthermore, device air stability was investigated. The electrical performance of C8-BTBT TFTs degrades after long periods of air exposure. Our work improves knowledge of charge transport behavior and mechanisms in C8-BTBT OTFTs. It also provides ideas that may help to improve device electrical performance further.