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Long-range, terrestrial quantum networks require high-brightness single-photon sources emitting in the telecom C-band for maximum transmission rates. For solid-state quantum emitters, the underlying pumping process, i.e., coherent or incoherent excitation schemes, impacts several photon properties such as photon indistinguishability, single-photon purity, and photon number coherence. These properties play a major role in quantum communication applications, the latter in particular for quantum cryptography. Here, we present a versatile telecom C-band single-photon source that is operated coherently and incoherently using two complementary pumping schemes. The source is based on a quantum dot coupled to a circular Bragg grating cavity, whereas coherent (incoherent) operation is performed via the novel SUPER scheme (phonon-assisted excitation). In this way, high end-to-end-efficiencies (η end ) of 5.36% (6.09%) are achieved simultaneously with a small multiphoton contribution g (2) (0) of 0.076 ± 0.001 [ g (2) (0) of 0.069 ± 0.001] for coherent (incoherent) operation.

Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of single photons with high brightness and low multiphoton contribution. Here we report on the first intercity QKD experiment using a bright deterministic single photon source. A BB84 protocol based on polarisation encoding is realised using the high-rate single photons in the telecommunication C-band emitted from a semiconductor QD embedded in a circular Bragg grating structure. Utilising the 79 km long link with 25.49 dB loss (equivalent to 130 km for the direct-connected optical fibre) between the German cities of Hannover and Braunschweig, a record-high secret key bits per pulse of 4.8 × 10 -5 with an average quantum bit error ratio of ~ 0.65% are demonstrated. An asymptotic maximum tolerable loss of 28.11 dB is found, corresponding to a length of 144 km of standard telecommunication fibre. Deterministic semiconductor sources therefore challenge state-of-the-art QKD protocols and have the potential to excel in measurement device independent protocols and quantum repeater applications., (© 2024. The Author(s).)

We demonstrate the integration of a wet-chemically etched surface relief on a vertical-cavity surface-emitting laser (VCSEL) emitting in the red spectral range for higher-order mode suppression. With this relief, fundamental-mode emission is achieved over the entire power range from threshold beyond thermal rollover. For collimation of the emitted beam, we implement polymer microlenses fabricated on-chip by a thermal reflow technique. We reduce the angle of divergence for all injected currents to a maximum of 2 ∘ . By measuring high-resolution spectra, we show that Gaussian beam profiles correspond to pure fundamental-mode emission which is preserved after implementation of the polymer microlens onto the etched relief, proving the compatibility of the two processes.

A hybrid interface of solid-state single-photon sources and atomic quantum memories is a long sought-after goal in photonic quantum technologies. Here, we demonstrate deterministic storage and retrieval of light from a semiconductor quantum dot in an atomic ensemble quantum memory at telecommunications wavelengths. We store single photons from an indium arsenide quantum dot in a high-bandwidth rubidium vapor-based quantum memory, with a total internal memory efficiency of (12.9 ± 0.4)%. The signal-to-noise ratio of the retrieved light field is 18.2 ± 0.6, limited only by detector dark counts.

A key challenge in quantum photonics today is the efficient and on-demand generation of high-quality single photons and entangled photon pairs. In this regard, one of the most promising types of emitters are semiconductor quantum dots, fluorescent nanostructures also described as artificial atoms. The main technological challenge in upscaling to an industrial level is the typically random spatial and spectral distribution in their growth. Furthermore, depending on the intended application, different requirements are imposed on a quantum dot, which are reflected in its spectral properties. Given that an in-depth suitability analysis is lengthy and costly, it is common practice to pre-select promising candidate quantum dots using their emission spectrum. Currently, this is done by hand. Therefore, to automate and expedite this process, in this paper, we propose a data-driven machine-learning-based method of evaluating the applicability of a semiconductor quantum dot as single photon source. For this, first, a minimally redundant, but maximally relevant feature representation for quantum dot emission spectra is derived by combining conventional spectral analysis with an autoencoding convolutional neural network. The obtained feature vector is subsequently used as input to a neural network regression model, which is specifically designed to not only return a rating score, gauging the technical suitability of a quantum dot, but also a measure of confidence for its evaluation. For training and testing, a large dataset of self-assembled InAs/GaAs semiconductor quantum dot emission spectra is used, partially labelled by a team of experts in the field. Overall, highly convincing results are achieved, as quantum dots are reliably evaluated correctly. Note, that the presented methodology can account for different spectral requirements and is applicable regardless of the underlying photonic structure, fabrication method and material composition. We therefore consider it the first step towards a fully integrated evaluation framework for quantum dots, proving the use of machine learning beneficial in the advancement of future quantum technologies., (© 2024. The Author(s).)

Integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several applications is the indistinguishability of the emitted photons. In this regard, GaAs quantum dots (QDs) obtained by droplet etching epitaxy show excellent performances, making the realization of these QDs into PICs highly appealing. Here, we show the first implementation in this direction, realizing the key passive elements needed in PICs, i.e., single-mode waveguides (WGs) with integrated GaAs-QDs and beamsplitters. We study the statistical distribution of wavelength, linewidth, and decay time of the excitonic line, as well as the quantum optical properties of individual emitters under resonant excitation. We achieve single-photon purities as high as 1 - g (2) (0) = 0.929 ± 0.009 and two-photon interference visibilities of up to V TPI = 0.953 ± 0.032 for consecutively emitted photons.

Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer electron and energy transfer in a monolayer-WSe 2 /graphene heterostructure. Depending on the nature of the optically prepared state, we find the different dominating transfer mechanisms: while electron injection from graphene to WSe 2 is observed after photoexcitation of quasi-free hot carriers in the graphene layer, we establish an interfacial Meitner-Auger energy transfer process following the excitation of excitons in WSe 2 . By analysing the time-energy-momentum distributions of excited-state carriers with a rate-equation model, we distinguish these two types of interfacial dynamics and identify the ultrafast conversion of excitons in WSe 2 to valence band transitions in graphene. Microscopic calculations find interfacial dipole-monopole coupling underlying the Meitner-Auger energy transfer to dominate over conventional Förster- and Dexter-type interactions, in agreement with the experimental observations. The energy transfer mechanism revealed here might enable new hot-carrier-based device concepts with van der Waals heterostructures., (© 2023. Springer Nature Limited.)

We report on the achievement of continuous wave bi-frequency operation in a membrane external-cavity surface-emitting laser (MECSEL), which is optically pumped with up to 4 W of 808 nm pump light. The presence of spatially specific loss of the intra-cavity high reflectivity mirror allows loss to be controlled on certain transverse cavity modes. The regions of spatially specific loss are defined through the removal of Bragg layers from the surface of the cavity high reflectivity mirror in the form of crosshair patterns with undamaged central regions, which are created using a laser ablation system incorporating a digital micromirror device (DMD). By aligning the laser cavity mode with the geometric centre of the loss patterns, the laser simultaneously operated on two Hermite-Gaussian spatial modes: the fundamental HG00 and the higher order HG11 mode. We demonstrate bi-frequency operation over a range of pump powers and sizes of spatial loss features, with a wavelength separation of approximately 5 nm centred at 1005 nm., Competing Interests: The authors have declared that no competing interests exist., (Copyright: © 2023 Daykin et al. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.)

Triggered, indistinguishable single photons are crucial in various quantum photonic implementations. Here, we realize a novel n + -i-n ++ diode structure embedding semiconductor quantum dots: the gated device enables spectral tuning of the transitions and deterministic control of the charged states. Blinking-free single-photon emission and high two-photon indistinguishability are observed. The line width's temporal evolution is investigated across over 6 orders of magnitude time scales, combining photon-correlation Fourier spectroscopy, high-resolution photoluminescence spectroscopy, and two-photon interference (visibility of V TPI,2ns = (85.8 ± 2.2)% and V TPI,9ns = (78.3 ± 3.0)%). Most of the dots show no spectral broadening beyond ∼9 ns time scales, and the photons' line width ((420 ± 30) MHz) deviates from the Fourier-transform limit by a factor of 1.68. The combined techniques verify that most dephasing mechanisms occur at time scales ≤2 ns, despite their modest impact. The presence of n-doping implies higher carrier mobility, enhancing the device's appeal for high-speed tunable, high-performance quantum light sources.

We present a new saturable absorber device principle which has the potential for broad spectral range applications. An active region membrane is separated from the substrate and placed on a dielectric end mirror. By combining the absorbing membrane with the dielectric mirror to one device we get a membrane saturable absorber mirror (MESAM) which is similar to the well-known semiconductor saturable absorber mirror (SESAM) without the restriction of the stop-band reflectivity of the distributed Bragg reflector (DBR). Stable mode-locking with the MESAM was achieved in a red-emitting VECSEL at a pump power of 4.25 W with a pulse duration of 3.06 ps at 812 MHz repetition rate. We compare the performance and pulses of both SESAM and MESAM in a z-shaped VECSEL cavity.

Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record lasing thresholds as low as 60 mW of pump power. We study the emission of single lasers and arrays of lasers in the sub-mm range. We are able to create waveguide laser arrays with modal widths of approximately 5 - 10 µm separated by 10 - 20 µm, using real and reciprocal space imaging we study their emission characteristics and find that they maintain their mutual coherence while operating on either single or multiple longitudinal modes per lasing cavity.

Mode-locked vertical external-cavity semiconductor lasers (VECSELs) are a wavelength-versatile laser that relies on a semiconductor saturable absorber mirror (SESAM) to initiate pulsed emission while simultaneously significantly influencing the pulse's properties. A SESAM can be characterized using a nonlinear reflectivity setup, realized here in the red spectral range around 660 nm and achieving a moderate peak-to-peak variation of 0.17%. We use our home-built mode-locked VECSEL to reach a high maximum fluence up to 430 µJ/cm 2 with strongly chirped 7.5 ps pulses. This allows the first-of-its-kind characterization of GaInP quantum well SESAMs, thereby revealing saturation fluences of 38 µJ/cm 2 and 34 µJ/cm 2 with modulation depths of 5% and 10.3% for SESAMs comprising one or two active quantum wells, respectively. For all structures, a nonsaturable loss of 2.8% is found and attributed to scattering loss.

We demonstrate a deep-red-emitting vertical external-cavity surface-emitting laser (VECSEL) with an emission wavelength around λ = 765 nm based on InGaAsP/GaInP quantum wells. The quaternary material system was characterized with x-ray diffraction of thin films as the basis for InGaAsP quantum wells, which are incorporated into an 11 × 1 quantum well active region. The surface morphology of the fabricated VECSEL structure is analyzed with atomic force microscopy and the laser is evaluated in a linear cavity for various heatsink temperatures resulting in a watt-level output power of P max,-15°C  = 1.71 W in a fundamental transverse mode.

A peak output power of 29.6 W and an average output power of 8.5 W at a wavelength of 750 nm were demonstrated in quasi-CW multi-mode operation using an AlGaAs-based vertical external-cavity surface-emitting laser (VECSEL) diode-pumped at a wavelength of 675 nm. The comparatively low bandgap of the barrier material that was tuned to the pump-photon energy allowed a good compromise between low heat generation due to the quantum defect and strong absorptance of the pump radiation. The limitations for the average output power came mainly from insufficient heat flow from the intra-cavity heat spreader to the heat sink. These results show the potential for power scaling of diode-pumped VECSELs and the importance of effective heat removal.

We report on nanoscopic exploration of the luminescence from individual InP quantum dots (QDs) by means of highly spatially resolved cathodoluminescence (CL) spectroscopy directly performed in a scanning transmission electron microscope (STEM). A 7-fold layer stack with high-density InP quantum dots is embedded as an active medium membrane in an external-cavity surface-emitting laser. We characterize the vertical transfer of carriers within the periodic separate confinement heterostructure and determine the capture efficiency of carriers from the cladding layer into the quantum dot layers. Benefiting from the nanoscale resolution of our STEM-CL, we perform single-dot spectroscopy on single isolated QDs in the STEM lamella resolving the details of the excitonic structure of individual quantum dots. Executing highly spatially resolved spectrum line scans within the QD layers, we directly visualize the lateral transport, i . e ., the efficient lateral capture of carriers into an individual QD. We observe a characteristic change of the spectral fingerprint during this line scan, while the electron beam is approaching and subsequently receding from the quantum dot position. This directly correlates to the increase and decrease of the numbers of excess carriers reaching the dot, i.e. , altering the quantum dot population. The characteristic shift of emission energies visualize the renormalization of the ground-state energy of the single dot, and the intensity ratio of the excitonic recombinations verifies this change of the occupation and the state-filling.

Solid-state quantum emitters with manipulable spin-qubits are promising platforms for quantum communication applications. Although such light-matter interfaces could be realized in many systems only a few allow for light emission in the telecom bands necessary for long-distance quantum networks. Here, we propose and implement an optically active solid-state spin-qubit based on a hole confined in a single InAs/GaAs quantum dot grown on an InGaAs metamorphic buffer layer emitting photons in the C-band. We lift the hole spin-degeneracy using an external magnetic field and demonstrate hole injection, initialization, read-out and complete coherent control using picosecond optical pulses. These results showcase a solid-state spin-qubit platform compatible with preexisting optical fiber networks., (© 2022. The Author(s).)

The combination of semiconductor quantum dots with photonic cavities is a promising way to realize nonclassical light sources with state-of-the-art performances regarding brightness, indistinguishability, and repetition rate. Here we demonstrate the coupling of InGaAs/GaAs QDs emitting in the telecom O-band to a circular Bragg grating cavity. We demonstrate a broadband geometric extraction efficiency enhancement by investigating two emission lines under above-band excitation, inside and detuned from the cavity mode, respectively. In the first case, a Purcell enhancement of 4 is attained. For the latter case, an end-to-end brightness of 1.4% with a brightness at the first lens of 23% is achieved. Using p-shell pumping, a combination of high count rate with pure single-photon emission (g (2) (0) = 0.01 in saturation) is achieved. Finally, a good single-photon purity (g (2) (0) = 0.13) together with a high detector count rate of 191 kcps is demonstrated for a temperature of up to 77 K.

We correct a mistake in [Opt. Express27, 11914 (2019)10.1364/OE.27.011914] when calculating the focal length of the Kerr lens with the measured values of the nonlinear refractive index n2 and parameters of a prototypical self-mode-locking VECSEL cavity. We therefore update Fig. 1 of the original publication. The new calculation yields a significantly larger value of the Kerr lens focal length leading to a smaller perturbation of the cavity beam profile.

Social media has arguably shifted political agenda-setting power away from mainstream media onto politicians. Current U.S. President Trump's reliance on Twitter is unprecedented, but the underlying implications for agenda setting are poorly understood. Using the president as a case study, we present evidence suggesting that President Trump's use of Twitter diverts crucial media (The New York Times and ABC News) from topics that are potentially harmful to him. We find that increased media coverage of the Mueller investigation is immediately followed by Trump tweeting increasingly about unrelated issues. This increased activity, in turn, is followed by a reduction in coverage of the Mueller investigation-a finding that is consistent with the hypothesis that President Trump's tweets may also successfully divert the media from topics that he considers threatening. The pattern is absent in placebo analyses involving Brexit coverage and several other topics that do not present a political risk to the president. Our results are robust to the inclusion of numerous control variables and examination of several alternative explanations, although the generality of the successful diversion must be established by further investigation.

Long-distance fiber-based quantum communication relies on efficient non-classical light sources operating at telecommunication wavelengths. Semiconductor quantum dots are promising candidates for on-demand generation of single photons and entangled photon pairs for such applications. However, their brightness is strongly limited due to total internal reflection at the semiconductor/vacuum interface. Here we overcome this limitation using a dielectric antenna structure. The non-classical light source consists of a gallium phosphide solid immersion lens in combination with a quantum dot nanomembrane emitting single photons in the telecom O-band. With this device, the photon extraction is strongly increased in a broad spectral range. A brightness of 17 % (numerical aperture of 0.6) is obtained experimentally, with a single photon purity of g (2) (0)=0.049±0.02 at saturation power. This brings the practical implementation of quantum communication networks one step closer.

We demonstrate a large-area red-emitting vertical-cavity surface-emitting laser (VCSEL) structure with significant improvement in the uniformity of charge carrier distribution by adopting a Si-doped $ {{\rm Al}_{0.20}}{\rm GaInP} $Al 0.20 GaInP current spreading layer and a bottom disk contact. The new structure emitting at 670 nm with a bottom disk contact diameter of 20 µm was compared with the conventional oxide-confined top-emitting structure with a similar aperture size. The maximum output peak power increased from 8.8 mW to 22.5 mW under pulsed-mode operation at room temperature. The far field improved from a strong multiple-mode pattern to a Gaussian-like profile. The corresponding divergence angle of the far-field pattern at $ 2{\rm {I}}_{\rm{th}} $2I th injection current reduced from 16.2° to 10.9°.

Seventy-one 7-oxycoumarins, 66 synthesized and 5 commercially sourced, were tested for their ability to inhibit growth in murine PAM212 keratinocytes. Forty-nine compounds from the library demonstrated light-induced lethality. None was toxic in the absence of UVA light. Structure-activity correlations indicate that the ability of the compounds to inhibit cell growth was dependent not only on their physiochemical characteristics, but also on their ability to absorb UVA light. Relative lipophilicity was an important factor as was electron density in the pyrone ring. Coumarins with electron withdrawing moieties - cyano and fluoro at C 3 - were considerably less active while those with bromines or iodine at that location displayed enhanced activity. Coumarins that were found to inhibit keratinocyte growth were also tested for photo-induced DNA plasmid nicking. A concentration-dependent alteration in migration on neutral gels caused by nicking was observed., (Copyright © 2019 Elsevier Inc. All rights reserved.)

Self-mode-locking has become an emerging path to the generation of ultrashort pulses with vertical-external-cavity surface-emitting lasers. In our work, a strong Kerr nonlinearity that is so far assumed to give rise to mode-locked operation is evidenced and a strong nonlinearity enhancement by the microcavity is revealed. We present wavelength-dependent measurements of the nonlinear absorption and nonlinear refractive index change in a gain chip using the Z-scan technique. We report negative nonlinear refraction up to 5x10 -12  cm 2 /W in magnitude in the (InGa)As/Ga(AsP) material system close to the laser design wavelength, which can lead to Kerr lensing. We show that by changing the angle of incidence of the probe beam with respect to the gain chip, the Kerr nonlinearity can be wavelength-tuned, shifting with the microcavity resonance. Such findings may ultimately lead to novel concepts with regard to tailored self-mode-locking behavior achievable by peculiar Kerr-lens chip designs for cost-effective, robust and compact fs-pulsed semiconductor lasers.

Efficient fibre-based long-distance quantum communication via quantum repeaters relies on deterministic single-photon sources at telecom wavelengths, potentially exploiting the existing world-wide infrastructures. For upscaling the experimental complexity in quantum networking, two-photon interference (TPI) of remote non-classical emitters in the low-loss telecom bands is of utmost importance. Several experiments have been conducted regarding TPI of distinct emitters, for example, using trapped atoms 1 , ions 2 , nitrogen vacancy centres 3,4 , silicon vacancy centres 5 , organic molecules 6 and semiconductor quantum dots 7,8 . However, the spectral range was far from the highly desirable telecom C-band. Here, we exploit quantum frequency conversion to realize TPI at 1,550 nm with single photons stemming from two remote quantum dots. We thereby prove quantum frequency conversion 9-11 as a bridging technology and a precise and stable mechanism to erase the frequency difference between independent emitters. On resonance, a TPI visibility of 29  ± 3% has been observed, limited only by the spectral diffusion processes of the individual quantum dots 12,13 . The local fibre network used covers several rooms between two floors of the building. Even the addition of up to 2 km of fibre channel shows no influence on the TPI visibility, proving the photon wavepacket distortion to be negligible. Our studies pave the way to establish long-distance entanglement distribution between remote solid-state emitters including interfaces with various quantum hybrid systems 14-16 .

Fully integrated quantum photonic circuits show a clear advantage in terms of stability and scalability compared to tabletop implementations. They will constitute a fundamental breakthrough in integrated quantum technologies, as a matter of example, in quantum simulation and quantum computation. Despite the fact that only a few building blocks are strictly necessary, their simultaneous realization is highly challenging. This is especially true for the simultaneous implementation of all three key components on the same chip: single-photon sources, photonic logic, and single-photon detectors. Here, we present a fully integrated Hanbury-Brown and Twiss setup on a micrometer-sized footprint consisting of a GaAs waveguide embedding quantum dots as single-photon sources, a waveguide beamsplitter, and two superconducting nanowire single-photon detectors. This enables a second-order correlation measurement on the single-photon level under both continuous-wave and pulsed resonant excitation. The presented proof-of-principle experiment proves the simultaneous realization and operation of all three key building blocks and therefore a major step towards fully integrated quantum optical chips.

In the present work, we demonstrate the fabrication and optical properties of Bragg grating cavities that are directly integrated into ridge waveguides along with the Purcell enhanced emission from integrated quantum dots. Measured Q-factors up to 4600 are observed in combination with resonances of the fundamental mode within a ± 0.11 nm range along the full fabricated chip. The measured Purcell enhancement up to a factor of 3.5 ± 0.5 shows the potential utility for state-of-the-art on-chip quantum optical experiments as realized in off-chip implementations. Our measurements are fully supported via FDTD simulations giving a theoretical Purcell enhancement up to a factor of 20 with a highly directional βdir-factor of 70 %. The straightforward upscaling and robust design of the investigated Bragg grating cavity in combination with a substantial Purcell enhancement represents a major step towards large scale on-chip quantum photonic circuits.

Background: We investigated the feasibility of rapid disc diffusion antibiotic susceptibility testing (rAST) with reading of inhibition zones after 6 and/or 8 h of incubation for Enterococcus faecalis, Enterococcus faecium, Pseudomonas aeruginosa and Acinetobacter baumannii. In addition, we evaluated discrimination of resistant populations from the WT populations at early timepoints and the requirement for clinical breakpoint adaptations for proper interpretation of rAST data., Methods: In total, 815 clinical strains [E. faecalis (n = 135), E. faecium (n = 227), P. aeruginosa (n = 295) and A. baumannii (n = 158)] were included in this study. Disc diffusion plates were streaked, incubated and imaged using the WASPLabTM automation system. WT populations and non-WT populations were defined using epidemiological cut-offs., Results and Conclusions: rAST at 6 and 8 h was possible for A. baumannii and enterococci with readability of inhibition zones >90%. Overall categorical agreement of rAST at 6 h with AST at 18 h was 97.2%, 97.4% and 95.3% for E. faecalis, E. faecium and A. baumannii, respectively. With few exceptions, major categorization error rates were <1% for A. baumannii, and vancomycin-resistant E. faecium were clearly separated from the WT at 6 h. For P. aeruginosa the average readability of inhibition zones was 68.9% at 8 h and we found an overall categorical agreement of 94.8%. Adaptations of clinical breakpoints and/or introduction of technical buffer zones, preferably based on aggregated population data from various epidemiological settings, are required for proper interpretation of rAST., (© The Author 2017. Published by Oxford University Press on behalf of the British Society for Antimicrobial Chemotherapy.)

Modern quantum technology currently experiences extensive advances in applicability in communications, cryptography, computing, metrology and lithography. Harnessing this technology platform for chem/bio sensing scenarios is an appealing opportunity enabling ultra-sensitive detection schemes. This is further facilliated by the progress in fabrication, miniaturization and integration of visible and infrared quantum photonics. Especially, the combination of efficient single-photon sources together with waveguiding/sensing structures, serving as active optical transducer, as well as advanced detector materials is promising integrated quantum photonic chem/bio sensors. Besides the intrinsic molecular selectivity and non-destructive character of visible and infrared light based sensing schemes, chem/bio sensors taking advantage of non-classical light sources promise sensitivities beyond the standard quantum limit. In the present review, recent achievements towards on-chip chem/bio quantum photonic sensing platforms based on N00N states are discussed along with appropriate recognition chemistries, facilitating the detection of relevant (bio)analytes at ultra-trace concentration levels. After evaluating recent developments in this field, a perspective for a potentially promising sensor testbed is discussed for reaching integrated quantum sensing with two fiber-coupled GaAs chips together with semiconductor quantum dots serving as single-photon sources.

Background: In principle, automated systems allow rapid reading of disc diffusion AST (rAST) within 6-8 h., Objectives: This study analysed whether rAST can discriminate resistance phenotypes such as ESBL, carbapenemases and MRSA/methicillin-resistant Staphylococcus epidermidis from WT populations. We describe species-drug combinations that may require clinical breakpoint adaptions for early reading due to zone diameter changes during the incubation period., Methods: In total, 1852 clinical strains [Escherichia coli (n = 475), Klebsiella pneumoniae (n = 375), Enterobacter cloacae (n = 301), Staphylococcus aureus (n = 407) and S. epidermidis (n = 294)] were included in this study comprising WT populations and important resistance phenotypes, e.g. ESBL, carbapenemases and MRSA. We assessed (i) separation of resistance phenotypes and WT populations after 6, 8 and 12 h as compared with the 18 h standard, and (ii) diameter changes of WT populations and associated putative epidemiological cut-offs during the incubation period. Disc diffusion plates were automatically streaked, incubated and imaged using the WASPLabTM system., Results and Conclusions: We demonstrated that important resistance phenotypes could reliably be separated from WT populations at early reading times for the most prevalent bacterial pathogens encountered in the clinical laboratory. Current AST expert rules and algorithms for identification of resistance mechanisms can readily be applied for rAST, e.g. EUCAST recommended rules for detection of ESBL, AmpC, carbapenemases and MRSA/methicillin-resistant S. epidermidis. However, several species-drug combinations may require clinical breakpoint adaptations when using rAST as the diameter, and hence the epidemiological cut-off, changes during the incubation period., (© The Author 2017. Published by Oxford University Press on behalf of the British Society for Antimicrobial Chemotherapy. All rights reserved. For Permissions, please email: journals.permissions@oup.com.)

Background: Antibiotic resistance poses a significant threat to patients suffering from infectious diseases. Early readings of antibiotic susceptibility test (AST) results could be of critical importance to ensure adequate treatment. Disc diffusion is a well-standardized, established and cost-efficient AST procedure; however, its use in the clinical laboratory is hampered by the many manual steps involved, and an incubation time of 16-18 h, which is required to achieve reliable test results., Methods: We have evaluated a fully automated system for its potential for early reading of disc diffusion diameters after 6-12 h of incubation. We assessed availability of results, methodological precision, categorical agreement and interpretation errors as compared with an 18 h standard. In total, 1028 clinical strains (291 Escherichia coli , 272 Klebsiella pneumoniae , 176 Staphylococcus aureus and 289 Staphylococcus epidermidis ) were included in this study. Disc diffusion plates were streaked, incubated and imaged using the WASPLab TM automation system., Results and Conclusions: Our results demonstrate that: (i) early AST reading is possible for important pathogens; (ii) methodological precision is not hampered at early timepoints; and (iii) species-specific reading times must be selected. As inhibition zone diameters change over time and are phenotype/drug combination dependent, specific cut-offs and expert rules will be essential to ensure reliable interpretation and reporting of early susceptibility testing results., (© The Author 2017. Published by Oxford University Press on behalf of the British Society for Antimicrobial Chemotherapy. All rights reserved. For Permissions, please email: journals.permissions@oup.com.)

In the current study, we report on the deterministic fabrication of solid immersion lenses (SILs) on lithographically pre-selected semiconductor quantum dots (QDs). We demonstrate the combination of state-of-the-art low-temperature in-situ photolithography and femtosecond 3D direct laser writing. Several QDs are pre-selected with a localization accuracy of less than 2 nm with low-temperature lithography and three-dimensional laser writing is then used to deterministically fabricate hemispherical lenses on top of the quantum emitter with a submicrometric precision. Due to the printed lenses, the QD light extraction efficiency is enhanced by a factor of 2, the pumping laser is focused more, and the signal-to-noise ratio is increased, leading to an improved localization accuracy of the QD to well below 1 nm. Furthermore, modifications of the QD properties, i.e. strain and variation of internal quantum efficiency induced by the printed lenses, are also reported.

Hybrid quantum systems integrating semiconductor quantum dots (QDs) and atomic vapours become important building blocks for scalable quantum networks due to the complementary strengths of individual parts. QDs provide on-demand single-photon emission with near-unity indistinguishability comprising unprecedented brightness-while atomic vapour systems provide ultra-precise frequency standards and promise long coherence times for the storage of qubits. Spectral filtering is one of the key components for the successful link between QD photons and atoms. Here we present a tailored Faraday anomalous dispersion optical filter based on the caesium-D 1 transition for interfacing it with a resonantly pumped QD. The presented Faraday filter enables a narrow-bandwidth (Δω=2π × 1 GHz) simultaneous filtering of both Mollow triplet sidebands. This result opens the way to use QDs as sources of single as well as cascaded photons in photonic quantum networks aligned to the primary frequency standard of the caesium clock transition.

We present experimental results on quantum frequency down-conversion of indistinguishable single photons emitted by an InAs/GaAs quantum dot at 904 nm to the telecom C-band at 1557 nm. Hong-Ou-Mandel (HOM) interference measurements are shown prior to and after the down-conversion step. We perform Monte-Carlo simulations of the HOM experiments taking into account the time delays of the different interferometers used and the signal-to-background ratio and further estimate the impact of spectral diffusion on the degree of indistinguishability. By that we conclude that the down-conversion step does not introduce any loss of HOM interference visibility. A noise-free conversion-process along with a high conversion-efficiency (> 30 %) emphasize that our scheme is a promising candidate for an efficient source of indistinguishable single photons at telecom wavelengths.

An output power of 2.5 W at a wavelength of 665 nm was obtained from a quantum-well (QW) and multipass-pumped AlGaInP-based vertical-external-cavity surface-emitting laser operated at a heat sink temperature of 10°C. Intracavity frequency doubling resulted in an output power of 820 mW at a wavelength of 333 nm. To the best of our knowledge, these are the highest continuous wave output powers from this type of laser both at the fundamental wavelength and in frequency-doubled operation. In fundamental wavelength operation, further power scaling by increasing the pump-spot size increased the output power to 3.3 W. However, at this power level, the laser was highly unstable. When the laser was operated at 50% pump duty cycle, a reproducible and stable peak output power of 3.6 W was obtained. These results demonstrate the potential of optical QW pumping combined with multipass pumping for the operation of AlGaInP-based semiconductor disk lasers.

The performance and versatility of GaAs/AlGaAs thin-film waveguide technology in combination with quantum cascade lasers for mid-infrared spectroscopy in comparison to conventional FTIR spectroscopy is presented. Infrared radiation is provided by a quantum cascade laser (QCL) spectrometer comprising four tunable QCLs providing a wavelength range of 5-11 μm (1925-885 cm(-1)) within a single collimated beam. Epitaxially grown GaAs slab waveguides serve as optical transducer for tailored evanescent field absorption analysis. A modular waveguide mounting accessory specifically designed for on-chip thin-film GaAs waveguides is presented serving as a flexible analytical platform in lieu of conventional attenuated total reflection (ATR) crystals uniquely facilitating macroscopic handling and alignment of such microscopic waveguide structures in real-world application scenarios.

This study compared a manual workup of urine clinical samples with fully automated WASPLab processing. As a first step, two different inocula (1 and 10 μl) and different streaking patterns were compared using WASP and InoqulA BT instrumentation. Significantly more single colonies were produced with the10-μl inoculum than with the 1-μl inoculum, and automated streaking yielded significantly more single colonies than manual streaking on whole plates (P < 0.001). In a second step, 379 clinical urine samples were evaluated using WASP and the manual workup. Average numbers of detected morphologies, recovered species, and CFUs per milliliter of all 379 urine samples showed excellent agreement between WASPLab and the manual workup. The percentage of urine samples clinically categorized as positive or negative did not differ between the automated and manual workflow, but within the positive samples, automated processing by WASPLab resulted in the detection of more potential pathogens. In summary, the present study demonstrates that (i) the streaking pattern, i.e., primarily the number of zigzags/length of streaking lines, is critical for optimizing the number of single colonies yielded from primary cultures of urine samples; (ii) automated streaking by the WASP instrument is superior to manual streaking regarding the number of single colonies yielded (for 32.2% of the samples); and (iii) automated streaking leads to higher numbers of detected morphologies (for 47.5% of the samples), species (for 17.4% of the samples), and pathogens (for 3.4% of the samples). The results of this study point to an improved quality of microbiological analyses and laboratory reports when using automated sample processing by WASP and WASPLab., (Copyright © 2016, American Society for Microbiology. All Rights Reserved.)

We demonstrate resonance fluorescence from single In-GaAs/GaAs quantum dots embedded in a rib waveguide beamsplitter structure operated under pulsed laser excitation. A systematic study on the excitation laser pulse duration depicts that a sufficiently small laser linewidth enables a substantial improved single-photon-to-laser-background ratio inside a waveguide chip. This manifests in the observation of clear Rabi oscillations over two periods of the quantum dot emission as a function of laser excitation power. A photon cross-correlation measurement between the two output arms of an on-chip beamsplitter results in a g(2)(0)=0.18, demonstrating the generation, guiding and splitting of triggered single photons under resonant excitation in an on-chip device. The present results open new perspectives for the implementation of photonic quantum circuits with integrated quantum dots as resonantly-pumped deterministic single-photon sources.

We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both the gain and the absorber structure contain InP quantum dots (QDs) as active material. In a v-shaped cavity using the semiconductor samples as end mirrors, a beta barium borate (BBO) crystal is placed in front of the semiconductor saturable absorber mirror (SESAM) for pulsed UV laser emission in one of the two outcoupled beams. Autocorrelation (AC) measurements at the fundamental wavelength reveal a FWHM pulse duration of 1.22ps. With a repetition frequency of 836MHz, the average output power is 10mW per beam for the red emission and 0.5mW at 325nm.

Single-photon sources with a high extraction efficiency are a prerequisite for applications in quantum communication and quantum computation schemes. One promising approach is the fabrication of a quantum dot containing membrane structure in combination with a solid immersion lens and a metal mirror. We have fabricated an 80 nm thin semiconductor membrane with incorporated InP quantum dots in an AlGaInP double hetero barrier via complete substrate removal. In addition, a gold layer was deposited on one side of the membrane acting as a mirror. The optical characterization shows in detail that the unique properties of the quantum dots are preserved in the membrane structure.

The performance of a 665-nm GaInP disk laser operated continuous-wave at 15°C both in-well-pumped at 640 nm and barrier pumped at 532 nm is reported. The efficiency with respect to the absorbed power was enhanced by 3.5 times when using a 640-nm pump instead of a 532-nm pump. In-well pumping which is based on the absorption of the pump photons within the quantum-well heterostructures of the gain region instead of short-wavelength absorption in the barrier and spacer regions reduces the quantum defect between pump and laser photon and hence the heat generation. A slope efficiency of 60% with respect to the absorbed pump power was obtained by in-well pumping at 15°C. Continuous-wave laser operation was further demonstrated at heat sink temperatures of up to 55°C. Both the measurement of photoluminescence and COMSOL simulation show that the overall heat load in the in-well pumped laser is smaller than in the barrier-pumped laser. These results demonstrate the potential of optical in-well pumping for the operation of red AlGaInP disk lasers if combined with means for efficient pump-light absorption.

Charge-neutral excitons in semiconductor quantum dots (QDs) have a small finite energy separation caused by the anisotropic exchange splitting. Coherent excitation of neutral excitons will generally excite both exciton components, unless the excitation is parallel to one of the dipole axes. We present a polaron master equation model to describe two-exciton pumping using a coherent continuous wave pump field in the presence of a realistic anisotropic exchange splitting. We predict a five-peak incoherent spectrum, namely a Mollow quintuplet under general excitation conditions. We experimentally confirm such spectral quintuplets for In(Ga)As QDs and obtain very good agreement with theory.

We present both experimental and theoretical investigations of a laser-driven quantum dot (QD) in the dressed-state regime of resonance fluorescence. We explore the role of phonon scattering and pure dephasing on the detuning-dependence of the Mollow triplet and show that the triplet sidebands may spectrally broaden or narrow with increasing detuning. Based on a polaron master equation approach, which includes electron-phonon interaction nonperturbatively, we derive a fully analytical expression for the spectrum. With respect to detuning dependence, we identify a crossover between the regimes of spectral sideband narrowing or broadening. We also predict regimes of phonon-induced squeezing and anti-squeezing of the spectral resonances. A comparison of the theoretical predictions to detailed experimental studies on the laser detuning-dependence of Mollow triplet resonance emission from single In(Ga)As QDs reveals excellent agreement.

We demonstrate efficient (>30%) quantum frequency conversion of visible single photons (711 nm) emitted by a quantum dot to a telecom wavelength (1313 nm). Analysis of the first- and second-order coherence before and after wavelength conversion clearly proves that pivotal properties, such as the coherence time and photon antibunching, are fully conserved during the frequency translation process. Our findings underline the great potential of single photon sources on demand in combination with quantum frequency conversion as a promising technique that may pave the way for a number of new applications in quantum technology.

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform. Mismatches in material properties, however, present a major challenge, leading to high defect densities in the epitaxial layers and adversely affecting radiative recombination processes. However, nanostructures, such as quantum dots, have been found to grow defect-free even in a suboptimal environment. Here we present the first realization of indium phosphide quantum dots on exactly oriented Si(001), grown by metal-organic vapour-phase epitaxy. We report electrically driven single-photon emission in the red spectral region, meeting the wavelength range of silicon avalanche photodiodes' highest detection efficiency.

Differential phase contrast microscopy has become known as a high resolution imaging technique for magnetic micro-structures in the past. The method senses the local induction by measuring the deflection of the probe beam after it passes through a specimen area carrying a magnetic field. Little attention has been paid, however, to the fact that this technique is also capable of measuring electric fields. An application of the technique to measure piezoelectric polarization fields inside multi-layered structures such as quantum wells is demonstrated. For this purpose, piezoelectric fields within non-centrosymmetric crystal structures, based on GaN/InGaN/GaN quantum wells, are investigated. It can be shown that the technique is sensitive to these fields and yields detailed information about the field distribution. The specific information and experimental limitations as well as artefacts of the technique will be discussed in detail and first measurements are shown. The main advantages turn out to be high sensitivity for electric fields, combined with a very high resolution, which is limited only by the STEM probe size. Another advantage is the large achievable field of view., (Copyright © 2012 Elsevier B.V. All rights reserved.)

We demonstrate ultra-sensitive chemical sensing in the mid-infrared spectral regime with a combination of quantum cascade lasers (QCLs) with GaAs/Al(0.2)Ga(0.8)As strip waveguides fabricated via metal-organic vapor-phase epitaxy (MOVPE) and reactive ion etching (RIE) using evanescent field absorption spectroscopy. These strip waveguides have been designed with a width of 200 μm, thereby facilitating 2-D confinement and mode-matched propagation of mid-infrared radiation emitted from a distributed feedback (DFB) QCL at a wavelength of 10.3 μm. Acetic anhydride was detected with a limit of detection (LOD) of 18 pL (19.4 ng) deposited at the waveguide surface by overlapping of the vibrational absorption of the methyl group with the emission frequency of the QCL. The obtained results indicate a remarkable enhancement in sensitivity by three orders of magnitude compared to previously reported multimode planar silver halide waveguides. Further reduction of the waveguide strip width to 50 μm resulted in an additional sensitivity enhancement yielding a calculated LOD of 0.05 pL for the exemplary analyte acetic anhydride, which is among the most sensitive evanescent field absorption measurements with a miniaturized mid-infrared sensor system reported to date.

Purpose: Curcumin exerts its anti-inflammatory activity via inhibition of nuclear factor κB. Oropharyngeal epithelia and residing bacteria closely interact in inflammation and infection. This in vitro model investigated the effects of curcumin on bacterial survival, adherence to, and invasion of upper respiratory tract epithelia, and studied its anti-inflammatory effect. We aimed to establish a model, which could offer insights into the host-pathogen interaction in cancer therapy induced mucositis., Methods: Moraxella catarrhalis (Mcat) and the oropharyngeal epithelial cell line Detroit 562 were used. Time-kill curves assessed the inhibition of bacterial growth and adherence assays and gentamicin protection assays determined the effect of curcumin-preincubated cells on bacterial adherence and invasion. Curcumin-mediated inhibition of pro-inflammatory activation by Mcat was determined via interleukin-8 concentrations in the supernatants. The synergistic role of secretory IgA (sIgA) on adherence was investigated., Results: Curcumin was bactericidal at concentrations >50 µM. Preincubation of Detroit cells for 60 min demonstrated that concentrations >100 µM inhibited bacterial adherence. Together with sIgA, curcumin inhibited adherence at concentrations ≥50 µM. Both 100 and 200 µM curcumin significantly inhibited Mcat cell invasion. Finally, curcumin inhibited Mcat-induced pro-inflammatory activation by strongly suppressing IL-8 release. At a concentration of 200 µM, 10 min of curcumin exposure inhibited IL-8 release significantly, and complete suppression required a pre-exposure time of ≥45 min., Conclusion: Curcumin, in clinically relevant concentrations for topical use, displayed strong antibacterial effect against a facultative upper respiratory tract pathogen by inhibiting bacterial growth, adherence, invasion, and pro-inflammatory activation of upper respiratory tract epithelial cells in vitro.

Objectives: The outer membrane protein M35 of Moraxella catarrhalis is an antigenically conserved porin. Knocking out M35 significantly increases the MICs of aminopenicillins. The aim of this study was to determine the biological mechanism of this potentially new antimicrobial resistance mechanism of M. catarrhalis and the behaviour of M35 in general stress situations., Methods: PCR using m35-specific primers was used to detect the m35 gene in clinical isolates. The m35 mRNA expression of strains 300, O35E and 415 after exposure to amoxicillin and different stress conditions was measured by real-time PCR and normalized in relation to their 16S rRNA expression. The expression of M35 protein was analysed by SDS-PAGE and western blotting., Results: Screening of 52 middle ear isolates resulted in positive PCR products for all tested strains. The analysis of m35 mRNA expression after amoxicillin treatment showed 24%-85% down-regulation compared with the respective amoxicillin-free controls in all three strains tested. Also, analysis of protein concentrations revealed lower M35 expression after growth with amoxicillin. Investigation of M35 during general stress responses showed down-regulation of the porin with growth at 26°C and 42°C, under hyperosmolar stress and under iron restriction., Conclusions: The reduced expression of M35 after aminopenicillin exposure indicates a novel resistance mechanism against aminopenicillins in M. catarrhalis, which may be relevant in vivo. The differences in expression after different stress treatments demonstrate that M35 is involved in general stress responses.

Using focused ion beam etching techniques, micropillar cavities were fabricated from a high reflective AlAs/AlGaAs distributed Bragg reflector planar cavity containing self-assembled InP quantum dots in (Al(0.20)Ga(0.80))(0.51)In(0.49)P barrier layers. The mode spectra of pillars with different diameters were investigated using micro-photoluminescence, showing excellent agreement with theory. Quality factors of the pillar cavities up to 3650 were observed. Furthermore, for a microcavity pillar with 1.26 mum diameter, single-photon emission is demonstrated by performing photon correlation measurements under pulsed excitation.

Low density (approximately 10(7) cm(-2)), small sized InGaAs quantum dots were grown on a GaAs substrate by metal-organic vapor-phase epitaxy and a special annealing technique. The structural quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 microeV and fine structure splittings of 25 microeV. High signal to noise ratios (approximately 140) and a nearly background free autocorrelation measurement indicate an excellent optical quality and single photon emission behavior. Furthermore, time resolved measurements reveal excitonic decay times typically in the range between 800 and 2300 ps and biexcitonic decay times around 300 ps.