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We introduce three newly designed thermally cross-linkable hole transport copolymers ( PIF-TPD , PIF-F2PCz , and PIF-TPAPCz ) for improving the performance of solution-processed organic light-emitting diodes ( s -OLEDs). These copolymers, designed through a strategic molecular approach with benzocyclobutene (BCB) and styrene-based cross-linking monomers, show high solvent resistance at a low cross-linking temperature (150 °C). Furthermore, these conjugated copolymers based on planar indenofluorene with three different hole transport (HT) units, exhibit outstanding charge carrier mobility (1.61 × 10 -2 cm 2 V -1 s -1 ), demonstrated by comparing hole reorganization energy and electronic coupling strength of HT units. Despite these copolymers showing the overall vertical orientation in the horizontal dipole moment measurement results, we demonstrated that the HT units can exhibit the preferred orientation, contributing to high hole transport properties. As a result, they perform exceptionally well as hole transport layers in green phosphorescent s -OLEDs, achieving a maximum external quantum efficiency of 15.3% and a maximum current efficiency of 53.9 cd A -1 with a small efficiency roll-off despite their relatively low triplet energy levels. These results are comparable to vacuum-deposited OLEDs, highlighting the potential of these copolymers in advancing OLED technology for display panels and lighting applications.

Quantum-dot light-emitting diodes (QLEDs), a kind of promising optoelectronic device, demonstrate potential superiority in next-generation display technology. Thermal cross-linked hole transport materials (HTMs) have been employed in solution-processed QLEDs due to their excellent thermal stability and solvent resistance, whereas the unbalanced charge injection and high cross-linking temperature of cross-linked HTMs can inhibit the efficiency of QLEDs and limit their application. Herein, a low-temperature cross-linked HTM of 4,4'-bis(3-(((4-vinylbenzyl)oxy)methyl)-9 H -carbazol-9-yl)-1,1'-biphenyl (DV-CBP) with a flexible styrene side chain is introduced, which reduces the cross-linking temperature to 150 °C and enhances the hole mobility up to 1.01 × 10 -3 cm 2 V -1 s -1 . More importantly, the maximum external quantum efficiency of 21.35% is successfully obtained on the basis of the DV-CBP as a cross-linked hole transport layer (HTL) for blue QLEDs. The low-temperature cross-linked high-mobility HTL using flexible side chains could be an excellent alternative for future HTL development.

The performance of blue quantum dot light-emitting diodes (QLEDs) is limited by unbalanced charge injection, resulting from insufficient holes caused by low mobility or significant energy barriers. Here, we introduce an angular-shaped heteroarene based on cyclopentane[ b ]thiopyran (C 8 -SS) to modify the hole transport layer poly- N -vinylcarbazole (PVK), in blue QLEDs. C 8 -SS exhibits high hole mobility and conductivity due to the π···π and S···π interactions. Introducing C 8 -SS to PVK significantly enhanced hole mobility, increasing it by 2 orders of magnitude from 2.44 × 10 -6 to 1.73 × 10 -4 cm 2 V -1 s -1 . Benefiting from high mobility and conductivity, PVK:C 8 -SS-based QLEDs exhibit a low turn-on voltage ( V on ) of 3.2 V. More importantly, the optimized QLEDs achieve a high peak power efficiency (PE) of 7.13 lm/W, which is 2.65 times that of the control QLEDs. The as-proposed interface engineering provides a novel and effective strategy for achieving high-performance blue QLEDs in low-energy consumption lighting applications.

The inadequate hole injection limits the efficiency and lifetime of the blue quantum dot light-emitting diodes (QLEDs), which severely hampers their commercial applications. Here a new discotic molecule of 3,6,10,11-tetrakis(pentyloxy)triphenylene-2,7-diyl bis(2,2-dimethylpropanoate) (T5DP-2,7) is introduced, in which the hole transport channels with superior hole mobility (2.6 × 10 -2 cm 2 V -1 s -1 ) is formed by stacking. The composite hole transport material (HTM) is prepared by blending T5DP-2,7 with the cross-linked 4,4'- bis(3-vinyl-9H-carbazol-9-yl)-1,1'biphenyl (CBP-V) which shows the deep highest occupied molecular orbital energy level. The increased hole mobility of the target composite HTM from 10 -4 to 10 -3 cm 2 V -1 s -1 as well as the stepwise energy levels facilitates the hole transport, which would be beneficial for more balanced carrier injection. This composite hole transport layer (HTL) has improved the deep-blue-emission performances of Commission International de I'Eclairage of (0.14, 0.04), luminance of 44080 cd m -2 , and external quantum efficiency of 18.59%. Furthermore, when L 0 is 100 cd m -2 , the device lifetime T 50 is extended from 139 to 502 h. The state-of-the-art performance shows the successful promotion of the high-efficiency for deep blue QLEDs, and indicates that the optimizing HTL by discotic molecule stacking can serve as an excellent alternative for the development of HTL in the future., (© 2022 The Authors. Advanced Science published by Wiley-VCH GmbH.)

A dopant-free hole transport layer with high mobility and a low-temperature process is desired for optoelectronic devices. Here, we study a metal-organic framework material with high hole mobility and strong hole extraction capability as an ideal hole transport layer for perovskite solar cells. By utilizing lifting-up method, the thickness controllable floating film of Ni 3 (2,3,6,7,10,11-hexaiminotriphenylene) 2 at the gas-liquid interface is transferred onto ITO-coated glass substrate. The Ni 3 (2,3,6,7,10,11-hexaiminotriphenylene) 2 film demonstrates high compactness and uniformity. The root-mean-square roughness of the film is 5.5 nm. The ultraviolet photoelectron spectroscopy and the steady-state photoluminescence spectra exhibit the Ni 3 (HITP) 2 film can effectively transfer holes from perovskite film to anode. The perovskite solar cells based on Ni 3 (HITP) 2 as a dopant-free hole transport layer achieve a champion power conversion efficiency of 10.3%. This work broadens the application of metal-organic frameworks in the field of perovskite solar cells., (© 2021. The Author(s).)

The novel and appropriate molecular design for polymer donors are playing an important role in realizing high-efficiency and high stable polymer solar cells (PSCs). In this work, four conjugated polymers (PIDT-O, PIDTT-O, PIDT-S and PIDTT-S) with indacenodithiophene (IDT) and indacenodithieno [3,2-b]thiophene (IDTT) as the donor units, and alkoxy-substituted benzoxadiazole and benzothiadiazole derivatives as the acceptor units have been designed and synthesized. Taking advantages of the molecular engineering on polymer backbones, these four polymers showed differently photophysical and photovoltaic properties. They exhibited wide optical bandgaps of 1.88, 1.87, 1.89 and 1.91 eV and quite impressive hole mobilities of 6.01 × 10 -4 , 7.72 × 10 -4 , 1.83 × 10 -3 , and 1.29 × 10 -3 cm 2 V -1 s -1 for PIDT-O, PIDTT-O, PIDT-S and PIDTT-S, respectively. Through the photovoltaic test via using PIDT-O, PIDTT-O, PIDT-S and PIDTT-S as donor materials and [6,6]-phenyl-C-71-butyric acid methyl ester (PC 71 BM) as acceptor materials, all the PSCs presented the high open circuit voltages ( V oc s ) over 0.85 V, whereas the PIDT-S and PIDTT-S based devices showed higher power conversion efficiencies (PCEs) of 5.09% and 4.43%, respectively. Interestingly, the solvent vapor annealing (SVA) treatment on active layers could improve the fill factors (FFs) extensively for these four polymers. For PIDT-S and PIDTT-S, the SVA process improved the FFs exceeding 71%, and ultimately the PCEs were increased to 6.05%, and 6.12%, respectively. Therefore, this kind of wide band-gap polymers are potentially candidates as efficient electron-donating materials for constructing high-performance PSCs.

It has been shown that the base-initiated cyclo-oligomerisation of phthalonitriles is favoured by bulky α-substituents making it possible to obtain the metal-free phthalocyanine directly and in high yield. The phthalocyanine with eight α-isoheptyl substituents gives a high time-of-flight hole mobility of 0.14 cm(2)·V(-1)·s(-1) within the temperature range of the columnar hexagonal phase, that is 169-189 °C.