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We report on a new approach of a low phase noise electro-optomechanical oscillator directly working in the GHz frequency range. The developed nanoscale oscillator is a one-dimensional photonic crystal made of gallium phosphide (GaP), heterogeneously integrated on silicon-on-insulator circuitry. Based on the strong interaction between the optical mode at the telecommunication wavelength and the mechanical mode in GHz, ultra-pure mechanical oscillations are enabled and directly imprinted on an optical carrier. Further stabilization is achieved with a delayed optoelectronic feedback loop using integrated electro-mechanical self-injection. We achieve a short-term stability of 0.7 Hz linewidth and a long-term stability with an Allan deviation below 10 -7 Hz/Hz at 10 s averaging time, which represents an important step toward fully integrated optomechanical oscillators. Integrability and the low phase noise of this oscillator address some of the most important needs of optoelectronic oscillators and pave the way toward on-chip integrated microwave oscillators for microwave applications such as RADARs., Competing Interests: The authors declare no competing financial interest., (© 2023 The Authors. Published by American Chemical Society.)

We theoretically investigate the noise properties of harmonic cavity nanolasers by introducing a model of coupled equations of evolution of the modes, taking spontaneous emission into account. This model is used to predict the noise among the nanolaser Hermite-Gaussian modes, both in continuous wave and mode-locked regimes. In the first case, the laser noise is described in terms of noise modes, thus illustrating the role of the laser dynamics. In the latter case, this leads to the calculation of the fluctuations of the pulse train parameters. The influence of the different laser parameters, including the amount of saturated absorption and the Henry factors, on the noise of the mode-locked regime is discussed in details.

We theoretically and experimentally investigate type II second harmonic generation in III-V-on-insulator wire waveguides. We show that the propagation direction plays a crucial role and that longitudinal field components can be leveraged for robust and efficient conversion. We predict that the maximum theoretical conversion is larger than that of type I second harmonic generation for similar waveguide dimensions and reach an experimental conversion efficiency of 12%/W, limited by the propagation loss.

We theoretically analyze the robustness to potential distortion of mode-locking in a harmonic cavity nanolaser sustaining oscillation of Hermite-Gaussian modes. Different types of imperfections of the harmonic potential that create the Hermite-Gaussian modes are considered: the non-parabolicity of the potential and the possible random errors in the shape of the potential. The influence of the different laser parameters, including the Henry factors of the gain medium and the saturable absorber, on the robustness of the mode-locked regime is discussed in detail.

We report a new class of Optical Parametric Oscillators, based on a 20 μm -long semiconductor Photonic Crystal Cavity and operating at Telecom wavelengths. Because the confinement results from Bragg scattering, the optical cavity contains a few modes, approximately equispaced in frequency. Parametric oscillation is reached when these high Q modes are thermally tuned into a triply resonant configuration, whereas any other parametric interaction is strongly suppressed. The lowest pump power threshold is estimated to 50 - 70 μW . This source behaves as an ideal degenerate Optical Parametric Oscillator addressing the needs in the field of quantum optical circuits, paving the way to the dense integration of highly efficient nonlinear sources of squeezed light or entangled photons pairs., Competing Interests: Additional Information The authors declare no competing interests.

Mode locking is predicted in a nanolaser cavity forming an effective photonic harmonic potential. The cavity is substantially more compact than a Fabry-Perot resonator with a comparable pulsing period, which is here controlled by the potential. In the limit of instantaneous gain and absorption saturation, mode locking corresponds to a stable dissipative soliton, which is very well approximated by the coherent state of a quantum mechanical harmonic oscillator. This property is robust against noninstantaneous material response and nonzero phase-intensity coupling.

Resonant cavities with high quality factor and small mode volume provide crucial enhancement of light-matter interactions in nanophotonic devices that transport and process classical and quantum information. The production of functional circuits containing many such cavities remains a major challenge, as inevitable imperfections in the fabrication detune the cavities, which strongly affects functionality such as transmission. In photonic crystal waveguides, intrinsic disorder gives rise to high- Q localized resonances through Anderson localization; however their location and resonance frequencies are completely random, which hampers functionality. We present an adaptive holographic method to gain reversible control on these randomly localized modes by locally modifying the refractive index. We show that our method can dynamically form or break highly transmitting necklace states, which is an essential step toward photonic-crystal-based quantum networks and signal processing circuits, as well as slow light applications and fundamental physics., Competing Interests: The authors declare no competing financial interest.

Generating and amplifying light in silicon (Si) continues to attract significant attention due to the possibility of integrating optical and electronic components in a single material platform. Unfortunately, silicon is an indirect band gap material and therefore an inefficient emitter of light. With the rise of integrated photonics, the search for silicon-based light sources has evolved from a scientific quest to a major technological bottleneck for scalable, CMOS-compatible, light sources. Recently, emerging two-dimensional materials have opened the prospect of tailoring material properties based on atomic layers. Few-layer phosphorene, which is isolated through exfoliation from black phosphorus (BP), is a great candidate to partner with silicon due to its layer-tunable direct band gap in the near-infrared where silicon is transparent. Here we demonstrate a hybrid silicon optical emitter composed of few-layer phosphorene nanomaterial flakes coupled to silicon photonic crystal resonators. We show single-mode emission in the telecommunications band of 1.55 μm ( E g = 0.8 eV) under continuous wave optical excitation at room temperature. The solution-processed few-layer BP flakes enable tunable emission across a broad range of wavelengths and the simultaneous creation of multiple devices. Our work highlights the versatility of the Si-BP material platform for creating optically active devices in integrated silicon chips.

A two dimensional photonic crystal (PhC) resonator, based on a recent design concept, entirely embedded in Silica, is fabricated in a CMOS full-process multiproject wafer, including additional steps such as implantation, metalization, Germanium deposition and planarization. A large loaded Q-factor (5.9 × 10 5 ) is achieved without removal of the silica cladding. A statistical analysis over 56 devices leads to an average value for the loaded Q of 4 × 10 5 , in close agreement with calculations. An upper boundary for the fabrication disorder is estimated to 1.2 nm.

We demonstrate that conformal encapsulation using atomic layer deposition of GaAs nano-cavity resonator made of photonic crystal cavity prevents photo-induced oxidation. This improvement allows injecting a large quantity of energy in the resonator without any degradation of the material, thus enabling spectral stability of the resonance. We prove second harmonic and third harmonic generation over more than one decade of pump power variation, thanks to this encapsulation, with a total efficiency (ηSHG = 8.3 × 10 -5 W -1 and ηTHG = 1.2 × 10 -3 W -2 ) and a large net output energy for both operations (PSHGout=0.2nW and PTHGout=8pW).

Ga 0.51 In 0.49 P is a promising candidate for thermally tunable nanophotonic devices due to its low thermal conductivity. In this work we study its thermo-optical response. We obtain the linear thermo-optical coefficient dn/dT=2.0±0.3·10 -4   K -1 by investigating the transmission properties of a single mode-gap photonic crystal nanocavity.

Weakly coupled high-Q nanophotonic cavities are building blocks of slow-light waveguides and other nanophotonic devices. Their functionality critically depends on tuning as resonance frequencies should stay within the bandwidth of the device. Unavoidable disorder leads to random frequency shifts which cause localization of the light in single cavities. We present a new method to finely tune individual resonances of light in a system of coupled nanocavities. We use holographic laser-induced heating and address thermal crosstalk between nanocavities using a response matrix approach. As a main result we observe a simultaneous anticrossing of 3 nanophotonic resonances, which were initially split by disorder.

We demonstrated a twofold acceleration of the fast time constant characterizing the recovery of a p-doped indium-phosphide photonic crystal all-optical gate. Time-resolved spectral analysis is compared to a three-dimensional drift-diffusion model for the carrier dynamics, demonstrating the transition from the ambipolar to the faster minority carrier dominated diffusion regime. This opens the perspective for faster yet efficient nanophotonic all-optical gates.

Heat dissipation is improved in nonlinear III-V photonic crystal waveguides owing to the hybrid III-V/Silicon integration platform, allowing efficient four-wave mixing in the continuous-wave regime. A conversion efficiency of -17.6  dB is demonstrated with a pump power level below 100 mW in a dispersion-engineered waveguide with a flat group index of 28 over a 10 nm bandwidth.

Near the band edge of photonic crystal waveguides, localized modes appear due to disorder. We demonstrate a new method to elucidate spatial profile of the localized modes in such systems using precise local tuning. Using deconvolution with the known thermal profile, the spatial profile of a localized mode with quality factor (Q) > 10 5 is successfully reconstructed with a resolution of 2.5 μm.

Solitons are localized waves formed by a balance of focusing and defocusing effects. These nonlinear waves exist in diverse forms of matter yet exhibit similar properties including stability, periodic recurrence and particle-like trajectories. One important property is soliton fission, a process by which an energetic higher-order soliton breaks apart due to dispersive or nonlinear perturbations. Here we demonstrate through both experiment and theory that nonlinear photocarrier generation can induce soliton fission. Using near-field measurements, we directly observe the nonlinear spatial and temporal evolution of optical pulses in situ in a nanophotonic semiconductor waveguide. We develop an analytic formalism describing the free-carrier dispersion (FCD) perturbation and show the experiment exceeds the minimum threshold by an order of magnitude. We confirm these observations with a numerical nonlinear Schrödinger equation model. These results provide a fundamental explanation and physical scaling of optical pulse evolution in free-carrier media and could enable improved supercontinuum sources in gas based and integrated semiconductor waveguides.

The dispersion of a coupled resonator optical waveguide made of photonic crystal mode-gap cavities is pronouncedly asymmetric. This asymmetry cannot be explained by the standard tight binding model. We show that the fundamental cause of the asymmetric dispersion is the inherent dispersive cavity mode profile; i.e., the mode wave function depends on the driving frequency, not the eigenfrequency. This occurs because the photonic crystal cavity resonances do not form a complete set. We formulate a dispersive mode coupling model that accurately describes the asymmetric dispersion without introducing any new free parameters.

A compact (15µm × 15µm) and highly-optimized 2×2 optical switch is demonstrated on a CMOS-compatible photonic crystal technology. On-chip insertion loss are below 1 dB, static and dynamic contrast are 40 dB and >20 dB respectively. Owing to efficient thermo-optic design, the power consumption is below 3 mW while the switching time is 1 µs.

We demonstrate the generation of an octave-spanning supercontinuum in InGaP membrane waveguides on a silicon substrate pumped by a 1550-nm femtosecond source. The broadband nature of the supercontinuum in these dispersion-engineered high-index-contrast waveguides is enabled by dispersive wave generation on both sides of the pump as well as by the low nonlinear losses inherent to the material. We also measure the coherence properties of the output spectra close to the pump wavelength and find that the supercontinuum is highly coherent at least in this wavelength range.

We propose high index contrast InGaP photonic wires as a platform for the integration of nonlinear optical functions in the telecom wavelength window. We characterize the linear and nonlinear properties of these waveguide structures. Waveguides with a linear loss of 12 dB/cm and which are coupled to a single mode fiber through gratings with a -7.5 dB coupling loss are realized. From four wave mixing experiments, we extract the real part of the nonlinear parameter γ to be 475 ± 50 W(-1)m(-1) and from nonlinear transmission measurements we infer the absence of two-photon absorption and measure a three-photon absorption coefficient of (2.5 ± 0.5) x 10(-2) cm(3)GW(-2).

The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model containing three time constants, that we interpret as the effects of fast carrier diffusion from an initially localized carrier distribution and the slower effects of surface recombination and bulk recombination. The variation of the time constants with parameters characterizing the nanocavity structure is investigated. The model is further extended to evaluate the importance of the fast and slow carrier relaxation processes in relation to patterning effects in the device, as exemplified by the case of all-optical wavelength conversion.

Single photons are of paramount importance to future quantum technologies, including quantum communication and computation. Nonlinear photonic devices using parametric processes offer a straightforward route to generating photons, however additional nonlinear processes may come into play and interfere with these sources. Here we analyse spontaneous four-wave mixing (SFWM) sources in the presence of multi-photon processes. We conduct experiments in silicon and gallium indium phosphide photonic crystal waveguides which display inherently different nonlinear absorption processes, namely two-photon (TPA) and three-photon absorption (ThPA), respectively. We develop a novel model capturing these diverse effects which is in excellent quantitative agreement with measurements of brightness, coincidence-to-accidental ratio (CAR) and second-order correlation function g((2))(0), showing that TPA imposes an intrinsic limit on heralded single photon sources. We build on these observations to devise a new metric, the quantum utility (QMU), enabling further optimisation of single photon sources.

We present theory and measurements of disorder-induced losses for low loss 1.5 mm long slow light photonic crystal waveguides. A recent class of dispersion engineered waveguides increases the bandwidth of slow light and shows lower propagation losses for the same group index. Our theory and experiments explain how Bloch mode engineering can substantially reduce scattering losses for the same slow light group velocity regime.

Collection of free carriers is a key issue in silicon photonics devices. We show that a lateral metal-semiconductor-metal Schottky junction is an efficient and simple way of dealing with that issue in a photonic crystal microcavity. Using a simple electrode design, and taking into account the optical mode profile, the resulting carrier distribution in the structure is calculated. We show that the corresponding effective free carrier lifetime can be reduced by 50 times when the bias is tuned. This allows one to maintain a high cavity quality factor under strong optical injection. In the fabricated structures, carrier depletion is correlated with transmission spectra and directly visualized by Electron Beam Induced Current pictures. These measurements demonstrate the validity of this carrier extraction principle. The design can still be optimized in order to obtain full carrier depletion at a smaller energy cost.

In this Letter we demonstrate heralded single-photon generation in a III-V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4×10(7) pairs·s(-1) nm(-1) W(-1) facilitated through dispersion engineering and the suppression of two-photon absorption in the gallium indium phosphide material. Photon pairs are generated with a coincidence-to-accidental ratio over 60 and a low g(2) (0) of 0.06 proving nonclassical operation in the single photon regime.

Cavity quantum electrodynamics advances the coherent control of a single quantum emitter with a quantized radiation field mode, typically piecewise engineered for the highest finesse and confinement in the cavity field. This enables the possibility of strong coupling for chip-scale quantum processing, but till now is limited to few research groups that can achieve the precision and deterministic requirements for these polariton states. Here we observe for the first time coherent polariton states of strong coupled single quantum dot excitons in inherently disordered one-dimensional localized modes in slow-light photonic crystals. Large vacuum Rabi splittings up to 311 μeV are observed, one of the largest avoided crossings in the solid-state. Our tight-binding models with quantum impurities detail these strong localized polaritons, spanning different disorder strengths, complementary to model-extracted pure dephasing and incoherent pumping rates. Such disorder-induced slow-light polaritons provide a platform towards coherent control, collective interactions, and quantum information processing.

High-resolution infrared absorption spectroscopy of acetylene gas is demonstrated in a dispersion-engineered photonic crystal waveguide under slow-light propagation. Experimental enhancement factors of 0.31 and 1.00 are obtained for TE and TM polarization, respectively, for group indices ranging from 1.5 to 6.7. The dependence of molecular absorption on the evanescent electric-field distribution and on the group index under structural slow-light illumination is experimentally demonstrated and confirmed by time-domain simulations.

We report on a chip scale parametric amplifier based on a GaInP photonic crystal waveguide. The amplifier operates with both pump and signal in the 1550 nm wavelength range and offers an on-chip gain of 11 dB (5 dB including the 6 dB coupling losses) when pumped at only 800 mW. It enables us, therefore, to incorporate the many advantages of parametric amplification within photonic chips for optical communication applications.

We demonstrate dispersion tailoring by coupling the even and the odd modes in a line-defect photonic crystal waveguide. Coupling is determined ab-initio using group theory analysis, rather than by trial-error optimisation of the design parameters. A family of dispersion curves is generated by controlling a single geometrical parameter. This concept is demonstrated experimentally with very good agreement with theory.

A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×10³ cm⁻¹) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.

The availability of a tunable delay line with a chip-size footprint is a crucial step towards the full implementation of integrated microwave photonic signal processors. Achieving a large and tunable group delay on a millimetre-sized chip is not trivial. Slow light concepts are an appropriate solution, if propagation losses are kept acceptable. Here we use a low-loss 1.5 mm-long photonic crystal waveguide to demonstrate both notch and band-pass microwave filters that can be tuned over the 0-50-GHz spectral band. The waveguide is capable of generating a controllable delay with limited signal attenuation (total insertion loss below 10 dB when the delay is below 70 ps) and degradation. Owing to the very small footprint of the delay line, a fully integrated device is feasible, also featuring more complex and elaborate filter functions.

We investigate four-wave mixing (FWM) in GaInP 1.5 mm long dispersion engineered photonic crystal waveguides. We demonstrate an 11 nm FWM bandwidth in the CW mode and a conversion efficiency of -24 dB in the quasi-CW mode. For picosecond pump and probe pulses, we report a 3 dB parametric gain and nearly a -5 dB conversion efficiency at watt-level peak pump powers., (© 2011 Optical Society of America)

We examine the effects of multiphoton absorption, free carriers, and disorder-induced linear scattering in slow-light photonic crystal waveguides. We derive an analytic formulation for self-phase modulation including the group velocity scaling of the nonlinear phase shift in materials limited by three-photon absorption as a representative nonlinear process. We investigate the role of free carriers and derive an approximate critical intensity at which these effects begin to strongly modify the optical field. This critical intensity is employed to determine an optimal group index for the self-phase modulation in the slow-light devices. These observations are confirmed with numerical modeling.

We demonstrate an all-silicon photodetector working at telecom wavelength. The device is a simple metal-semiconductor-metal detector fabricated on silicon-on-insulator. A two-dimensional photonic crystal nanocavity (Q=60,000) is used to increase the response that arises from the linear and two-photon absorption of silicon. The responsivity of the detector is about 20 mA/W and its bandwidth is larger than 1 GHz.

We investigate the nonlinear response of photonic crystal waveguides with suppressed two-photon absorption. A moderate decrease of the group velocity (approximately c/6 to c/15, a factor of 2.5) results in a dramatic (x 30) enhancement of three-photon absorption well beyond the expected scaling, proportional, variant 1/v3g. This non-trivial scaling of the effective nonlinear coefficients results from pulse compression, which further enhances the optical field beyond that of purely slow-group velocity interactions. These observations are enabled in mm-long slow-light photonic crystal waveguides owing to the strong anomalous group-velocity dispersion and positive chirp. Our numerical physical model matches measurements remarkably.

Nonlinear propagation experiments in GaAs photonic crystal waveguides (PCW) were performed, which exhibit a large enhancement of third order nonlinearities, due to light propagation in a slow mode regime, such as two-photon absorption (TPA), optical Kerr effect and refractive index changes due to free-carriers generated by TPA. A theoretical model has been established that shows a very good quantitative agreement with experimental data and demonstrates the important role that the group velocity plays. These observations give a strong insight into the use of PCWs for optical switching devices.

We haves realized and measured a GaAs nanocavity in a slab photonic crystal based on the design by Kuramochi et al. [Appl. Phys. Lett. 88, 041112 (2006)]. We measure a quality factor Q=700,000, which proves that ultrahigh Q nanocavities are also feasible in GaAs. We show that owing to larger two-photon absorption in GaAs nonlinearities appear at the microwatt level and will be more functional in gallium arsenide than in silicon nanocavities.

Photonic band properties are presented for a two-dimensional rectangular-groove grating of metal into air. The properties of the surface modes are shown and discussed with a perfect electric conductor, and compared to those of surface plasmons with real metal. The same structure is also studied with real metal in the near infrared. The results are obtained with a 3-D finite element numerical code.

We propose a design for patterned metal-coated surfaces allowing efficient broadband coupling of radiation to a fully localized surface cavity mode, resulting in a zero-focal-length concentrator. This finite structure exploits the interplay of a defect mode cavity with a coupling grating and is investigated through the modal expansion method and finite-difference time domain calculations.