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Thin films of transition metal oxides and oxynitrides have proven highly effective in protecting stainless steels against corrosion in both chemically aggressive environments and biological fluids. In the present work, cerium zirconium oxynitride thin films were deposited to enhance the corrosion resistance of surgical-grade stainless steel to be used in osteosynthesis processes. Two techniques were employed: co-sputtering and radiofrequency (RF) sputtering, and the morphology and corrosion efficiency of the coatings deposited by each technique were evaluated. X-ray diffraction, X-ray photoelectron spectroscopy and field emission transmission electron microscopy were used to characterize the morphological and chemical structure, respectively. Additionally, the corrosion resistance of the oxynitride-coated surgical grade stainless steel system (ZrCeO x N y -AISI 316L) was assessed using Hank's solution as the corrosive electrolyte, to determine its resistance to corrosion in biological media. The results show that ZrCeO x N y coatings increase the corrosion resistance of surgical grade stainless steel by two orders of magnitude and that the Ce(III)/Ce(IV) equilibrium decreases the corrosion rate, thereby increasing the durability of the steel in a biological environment. The results show that Ce coatings increase the corrosion resistance of surgical grade stainless steel by two orders of magnitude and that the Ce(III)/Ce(IV) equilibrium decreases the corrosion rate, thereby increasing the durability of the steel in a biological environment.

A co-sputtering process for the deposition of Fe 0.8 Ga 0.2 B alloy magnetostrictive thin films is studied in this paper. The soft magnetic performance of Fe 0.8 Ga 0.2 B thin films is modulated by the direct-current (DC) sputtering power of an FeGa target and the radio-frequency (RF) sputtering power of a B target. Characterization results show that the prepared Fe 0.8 Ga 0.2 B films are amorphous with uniform thickness and low coercivity. With increasing FeGa DC sputtering power, coercivity raises, resulting from the enhancement of magnetism and grain growth. On the other hand, when the RF sputtering power of the B target increases, the coercivity decreases first and then increases because of the conversion of the films from a crystalline to an amorphous state. The lowest coercivity of 7.51 Oe is finally obtained with the sputtering power of 20 W for the FeGa target and 60 W for the B target. Potentially, this optimization provides a simple way for improving the magnetoelectric coefficient of magnetoelectric composite materials and the sensitivity of magnetoelectric sensors.

Complex multilayer film structures were fabricated through a custom-built angular DC magnetron co-sputtering system. In this system, separate Cu, Al, and brass (Cu + Zn) targets were mounted on three magnetron guns, working in conjunction with a rotating substrate. This study aimed to compare the properties of films with intricate structures, which were sputtered onto glass slides and polypropylene substrates. The sputtering process was optimized using a Box-Behnken design, considering three variable operating conditions: substrate rotation speed, sputtering time, and sputtering voltage. The Analysis of Variance (ANOVA) results for film thickness and roughness, sputtered with three different materials onto glass slides and polypropylene (PP) substrates, indicated that all three independent variables significantly influenced the optimum response, with P -values less than 0.05 (<α = 0.05). The optimal conditions for maximizing the thickness and roughness of the sputtered film on PP substrates differed from those obtained for the thin-film properties of the sputtered film on glass slide substrates. Top-view images of the surface morphology revealed a dense and granular structure for the film deposited on the glass slide, whereas some grooves between the grains and fractures were observed in the film on the PP substrate. Additionally, it was evident that these sputtered multilayer films exhibited a complex structure, as reflected in the uniform and homogeneous distribution of Cu, Al, and Zn atoms on both glass slides and PP substrates., Competing Interests: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper., (© 2023 The Authors.)

Aluminum-doped zinc oxide (AZO) is considered as a promising candidate as transparent conductive oxide (TCO) for silicon heterojunction solar cells due to its high carrier density, nontoxic nature, and low cost. Herein, it is presented that the transparency of the AZO film can be optimized through co-sputtering of AZO and molybdenum oxide (MoO x ). Furthermore, aluminum and molybdenum co-doped zinc oxide (MAZO) can be used as both the TCO layer and electron-selective contact (ESC) for silicon heterojunction solar cells. The surface morphology, cation oxidation state, and optical and electrical properties of all MAZO films are characterized. It is found that the transmittance of all MAZO films is significantly increased at a wavelength of 450-800 nm due to MAZO with a stronger Zn-O bond and a wider band gap. The conductivity of MAZO films is approximate to AZO films at a low MoO x target deposit power (50 W), and the sheet resistance of MAZO films increases significantly by increasing the deposition power up to 100 W. Finally, the optimized MAZO films are used as TCO and ESC for silicon heterojunction solar cells, showing a power conversion efficiency of 19.58%. The results show an effective stage to improve the optical properties of AZO through co-doping and the possibility of applying MAZO as a dual-functional layer for silicon solar cells.

Heterojunction structures of n-ZnO/p-Si were prepared through the growth of undoped ZnO and (Gd, Al) co-doped ZnO films onto p-type Si (1 0 0) substrates, using a co-sputtering method. The structural and optical properties of the Gd-doped ZnO films were studied as a function of different Al doping concentrations. The X-ray diffraction profiles indicated that the films had a nanocrystalline structure of ZnO with a (0 0 2) preferential orientation. An increase in the Al doping concentration deteriorated the (0 0 2) diffraction peak intensity. The transmittance measurements in the UV-Vis wavelength range indicated that the film's optical gap increased with increase in Al doping concentration. The heterojunction parameters were evaluated using the current-voltage ( I-V ) characterization carried out of the fabricated n-ZnO/p-Si heterostructure, in dark conditions at room temperature. From these measurements, the n-ZnO-based DMS/p-Si heterojunction diode with the use of (Gd, Al) co-doped ZnO film showed the lowest leakage current of 1.28 × 10 -8 A and an ideality factor η of 1.11, close to the ideal diode behavior of η = 1, compared to the n-Gd-doped ZnO/p-Si and n-undoped ZnO/p-Si heterojunction diodes.

This study demonstrated a silver (Ag) and samarium-doped ceria (SDC) mixed ceramic and metal composite (i.e., cermet) as a cathode for low-temperature solid oxide fuel cells (LT-SOFCs). Introducing the Ag-SDC cermet cathode for LT-SOFCs revealed that the ratio between Ag and SDC, which is a crucial factor for catalytic reactions, can be tuned by the co-sputtering process, resulting in enhanced triple phase boundary (TPB) density in the nanostructure. Ag-SDC cermet not only successfully performed as a cathode to increase the performance of LT-SOFCs by decreasing polarization resistance but also exceeded the catalytic activity of platinum (Pt) due to the improved oxygen reduction reaction (ORR). It was also found that less than half of Ag content was effective to increase TPB density, preventing oxidation of the Ag surface as well.

This study explored the structural characteristics, mechanical properties, and oxidation behavior of W-enriched TaWSiN films prepared through co-sputtering. The atomic ratios [W/(W + Ta)] of the as-deposited films maintained a range of 0.77-0.81. The TaWSiN films with a Si content of 0-13 at.% were crystalline, whereas the film with 20 at.% Si was amorphous. The hardness and Young's modulus of crystalline TaWSiN films maintained high levels of 26.5-29.9 GPa and 286-381 GPa, respectively, whereas the hardness and Young's modulus of the amorphous Ta 7 W 33 Si 20 N 40 films exhibited low levels of 18.2 and 229 GPa, respectively. The oxidation behavior of TaWSiN films was investigated after annealing at 600 °C in a 1%O 2 -Ar atmosphere, and cone-like Ta 0.3 W 0.7 O 2.85 oxides formed and extruded from the TaWSiN films.

Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped AlN thin films by using DC and RF magnetron sputtering for optoelectronic applications. Additionally, a comparative analysis was also carried out on the as-deposited and annealed thin films. Several spectroscopy and microscopy techniques were considered for the characterization of structural (X-ray diffraction), morphological (SEM), chemical bonding (FTIR), and emission (PL spectroscopy) properties. The XRD results show that the thin films have an oriented c-axis hexagonal structure. SEM analysis validated the granular-like morphology of the deposited sample, and FTIR results confirm the presence of chemical bonding in deposited thin films. The photoluminescence (PL) emission spectra exhibit different peaks in the visible region when excited at different wavelengths. A sharp and intense photoluminescence peak was observed at 426 nm in the violet-blue region, which can be attributed to inter-band transitions due to the incorporation of Ni in AlN. Most of the peaks in the PL spectra occurred due to direct-band recombination and indirect impurity-band recombination. After annealing, the intensity of all observed peaks increases drastically due to the development of new phases, resulting in a decrease in defects and a corresponding increase in the crystallinity of the thin film. The observed structural, morphological, and photoluminescence results suggest that Ni: AlN is a promising candidate to be used in optoelectronics applications, specifically in photovoltaic devices and lasers.

Due to their outstanding power density, long cycle life and low cost, supercapacitors have gained much interest. As for supercapacitor electrodes, molybdenum nitrides show promising potential. Molybdenum nitrides, however, are mainly prepared as nanopowders via a chemical route and require binders for the manufacture of electrodes. Such electrodes can impair the performance of supercapacitors. Herein, binder-free chromium (Cr)-doped molybdenum nitride (Mo 2 N) TFEs having different Cr concentrations are prepared via a reactive co-sputtering technique. The Cr-doped Mo 2 N films prepared have a cubic phase structure of γ-Mo 2 N with a minor shift in the (111) plane. While un-doped Mo 2 N films exhibit a spherical morphology, Cr-doped Mo 2 N films demonstrate a clear pyramid-like surface morphology. The developed Cr-doped Mo 2 N films contain 0-7.9 at.% of Cr in Mo 2 N lattice. A supercapacitor using a Cr-doped Mo 2 N electrode having the highest concentration of Cr reveals maximum areal capacity of 2780 mC/cm 2 , which is much higher than that of an un-doped Mo 2 N electrode (110 mC/cm 2 ). Furthermore, the Cr-doped Mo 2 N electrode demonstrates excellent cycling stability, achieving ~ 94.6% capacity retention for about 2000 cycles. The reactive co-sputtering proves to be a suitable technique for fabrication of binder-free TFEs for high-performance energy storage device applications., (© 2022. The Author(s).)

The model to tailor the required chemical composition of thin films fabricated via multisource deposition, exploiting basic physicochemical constants of source materials, is developed. The model is experimentally verified for the two-source depositions of chalcogenide thin films from Ga-Sb-Te system (tie-lines GaSb-GaTe and GaSb-Te). The thin films are deposited by radiofrequency magnetron sputtering using GaSb, GaTe, and Te targets. Prepared thin films are characterized by means of energy dispersive X-ray analysis coupled with a scanning electron microscope to determine the chemical composition and by variable angle spectroscopic ellipsometry to establish film thickness. Good agreement between results of calculations and experimentally determined compositions of the co-deposited thin films is achieved for both the above-mentioned tie-lines. Moreover, in spite of all the applied simplifications, the proposed model is robust to be generally used for studies where the influence of thin film composition on their properties is investigated.

In this study, we investigated the structural properties of TeO 2 -ZnO (TZ) and TeO 2 -ZnO-Au (TZA) thin films sputtered under different oxygen concentrations and either annealed or not annealed at 325 °C in air for 10 or 20 h. The lattice changes of the tellurium oxide were shown to be inherent in the polymorph properties of the α and β phases. The β phase was formed for null oxygen flow and the α phase was formed for different oxygen flows (0.5-7.0 sccm) during TZ and TZA sputtering. Au was encountered in its single phase or as AuTe 2 . The annealing had very little influence on the α and β phases for both TZ and TZA. It is worth noting that SiO 2 and orthotellurate anions are both formed for not-null oxygen flow. An electrochemical mechanism was proposed to explain the SiO 2 growth at the TZ/Si or TZA/Si interface, taking the orthotellurate anion as oxidizing agent into account.

A sneak path current-a current passing through a neighboring memory cell-is an inherent and inevitable problem in a crossbar array consisting of memristor memory cells. This serious problem can be alleviated by serially connecting the selector device to each memristor cell. Among the various types of selector device concepts, the diffusive selector has garnered considerable attention because of its excellent performance. This selector features volatile threshold switching (TS) using the dynamics of active metals such as Ag or Cu, which act as an electrode or dopant in the solid electrolyte. In this study, a diffusive selector based on Ag-doped HfO x is fabricated using a co-sputtering system. As the Ag concentration in the HfO x layer varies, different electrical properties and thereby TS characteristics are observed. The necessity of the electroforming (EF) process for the TS characteristic is determined by the proper Ag concentration in the HfO x layer. This difference in the EF process can significantly affect the parameters of the TS characteristics. Therefore, an optimized doping condition is required for a diffusive selector to attain excellent selector device behavior and avoid an EF process that can eventually degrade device performance.

A new simple way for tuning the phase transition temperature (PTT) of VO 2 thin films has been proposed to solve the problem of changing the doping ratio by using the dual-target co-sputtering method. A series of samples with W doping ratios of 0%, 0.5%, 1%, 1.5% and 2% have been fabricated by sputtering V films with the power of pure and 2% W-doped V targets from 500 W: 0 W, 500 W: 250 W, 500 W: 500 W, 250 W: 500 W to 0 W: 500 W respectively and then annealed in an oxygen atmosphere to form VO 2 . The XRD results of both pure and W-doped VO 2 samples reveal that VO 2 forms and is the main component after annealing. The PTT can be tuned by controlling the sputtering power ratio of the pure and doped targets. It can be tuned easily from 64.3 °C to 36.5 °C by using the pure and 2% W-doped targets for demonstration, with W doping ratios from 0% to 2%. It is also valid for other doping elements and is a promising approach for the large-scale production of sputtering.

In this study, we develop a facile method to fabricate highly sensitive and stable surface-enhanced Raman scattering (SERS) substrate, which is realized by combining co-sputtering with atomic layer deposition technology. To accomplish the SERS substrate preparation, we firstly utilized co-sputtering silver and aluminum on glass slides to form uniform discontinuous Ag film by removing Al later, which acted as SERS active moiety and presented high sensitivity in glycerin detection. After coating an ultrathin TiO 2 layer via atomic layer deposition (ALD), the samples could further enhance the Raman signal due to the chemical effect as well as the long-range effect of the enhanced electromagnetic field generated by the encapsulated Ag nanoparticles (NPs). Besides, the coated sample could maintain the significant enhancement in air condition for more than 30 days. The high stability is induced by TiO 2 layer, which efficiently prevents Ag NPs from surface oxidation. This highly sensitive and stable SERS substrate might highlight the application of interface state investigation for exploring novel liquid lubricating materials.

In this study, amorphous indium gallium oxide thin-film transistors (IGO TFTs) were fabricated by co-sputtering. Three samples with different deposition powers of the In₂O₃ target, namely, sample A with 50 W deposition power, sample B with 60 W deposition power, and sample C with 70 W deposition power, were investigated. The device performance revealed that oxygen vacancies are strongly dependent on indium content. However, when the deposition power of the In₂O₃ target increased, the number of oxygen vacancies, which act as charge carriers to improve the device performance, increased. The best performance was recorded at a threshold voltage of 1.1 V, on-off current ratio of 4.5 × 10⁶, and subthreshold swing of 3.82 V/dec in sample B. Meanwhile, the optical properties of sample B included a responsivity of 0.16 A/W and excellent ultraviolet-to-visible rejection ratio of 8 × 10⁴. IGO TFTs may act as photodetectors according to the results obtained for optical properties.

p-Type SnO thin films were deposited on a Si substrate by a cosputtering process using ceramic SnO and metal Sn targets at room temperature without adding oxygen. By varying the dc sputtering power applied to the Sn target while maintaining a constant radio frequency power to the SnO target, the Sn/O ratio varied from 56:44 to 74:26 at the as-deposited state. After thermal annealing at 180 °C for 25 min under air atmosphere using a microwave annealing system, the films were crystallized into tetragonal SnO when the Sn/O ratio increased from 44:56 to 57:43. Notably, the metallic Sn remained when the Sn/O ratio was higher than 55:45 at an annealed state. When the ratio was lower than 55:45 at the annealed state, the incorporated Sn fully oxidized to SnO, making the films useful p-type semiconductors, whereas the films became metallic conductors at higher Sn/O ratios. At the Sn/O ratio of 55:45 at the annealed state, the film showed the highest Hall mobility of 8.8 cm 2 V -1 s -1 and a hole concentration of 5.4 × 10 18 cm -3 . Interestingly, the electrical conduction behavior showed trap-mediated hopping when the Sn metal was cosputtered, whereas the single SnO film showed regular band conduction behavior. The residual stress effect could interpret such property variation originated from the sputtering power and postoxidation-induced volumetric effects. This report makes a critical contribution to the in-depth understanding of the composition-structure-property relationship of this technically important thin film material.