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The development of flexible electronics has increased the demand for wearable pressure sensors that can be used to monitor various biomedical signals. In this context, pressure sensors based on zinc oxide (ZnO) have great potential since, besides the biocompatibility and biodegradability of this metal oxide, it also has piezoelectric properties. The common feature of these sensors is the alignment of the ZnO nanostructures in the strain direction. This alignment is achieved through a three-stage procedure: deposition of a ZnO nanoparticle layer (seed layer) followed by its patterning and the subsequent growth of nanostructures from the seed layer nanoparticles. Herein, a process compatible with industrial scale for depositing seed layers by flexographic printing is proposed, allowing seed layers to be deposited and patterned swiftly and efficiently in a single step on flexible indium tin oxide coated polyethylene terephthalate substrates, significantly decreasing the time and cost required to produce pressure sensors. The growth conditions of ZnO nanorods on these substrates were also studied to analyze their influence on the morphological and structural characteristics of the nanostructures. Nanorods with length of (0.27 ± 0.04) μm and density of (296 ± 6) nanorods per μm 2 were obtained in microwave-assisted hydrothermal syntheses carried out at 100 °C for 30 min, with a 1 M zinc acetate seed layer and using an equimolar growth solution of zinc nitrate and hexamethylenetetramine. These conditions were used to produce ZnO-based pressure sensors with two patterns (one square and 16 individual squares). Although the single square sensors displayed a higher average output voltage ((12 ± 5) V for an impact pressure of 150 kPa), their response was considerably more variable than the patterned sensors (with 16 squares), which displayed an average output voltage of (8 ± 2) V under an applied pressure of 150 kPa and sensitivity values of (0.06 ± 0.01) V kPa -1 , demonstrating their potential for wearables and portable electronics.

The skin plays a crucial role in maintaining homeostasis and protecting against external aggressors. Recent research has highlighted the potential of probiotics and postbiotics in dermatological treatments and skincare. These beneficial microorganisms interact with the skin microbiota, modulate the immune response, and enhance the skin barrier, offering a promising therapeutic avenue for various skin conditions, such as acne, dermatitis, eczema, and psoriasis. This bibliometric study aims to analyze the global trends and scientific impact of topical probiotics in dermatology. By reviewing 106 articles published between 2013 and 2023, the study categorizes the applications of probiotics in wound healing, inflammatory skin diseases, and general skincare. The findings indicate a significant increase in publications from 2021 onwards, attributed to the heightened focus on medical research during the COVID-19 pandemic. This study also identifies the most productive countries, institutions, and authors in this field, highlighting the importance of international collaborations. The results underscore the efficacy of probiotic-based topical formulations in improving skin health, reducing inflammation, and enhancing wound healing. This comprehensive analysis supports the development of new therapeutic strategies based on topical probiotics and encourages high-quality research in this promising area.

Direct Laser Writing (DLW) has been increasingly selected as a microfabrication route for efficient, cost-effective, high-resolution material synthesis and conversion. Concurrently, lasers participate in the patterning and assembly of functional geometries in several fields of application, of which electronics stand out. In this review, recent advances and strategies based on DLW for electronics microfabrication are surveyed and outlined, based on laser material growth strategies. First, the main DLW parameters influencing material synthesis and transformation mechanisms are summarized, aimed at selective, tailored writing of conductive and semiconducting materials. Additive and transformative DLW processing mechanisms are discussed, to open space to explore several categories of materials directly synthesized or transformed for electronics microfabrication. These include metallic conductors, metal oxides, transition metal chalcogenides and carbides, laser-induced graphene, and their mixtures. By accessing a wide range of material types, DLW-based electronic applications are explored, including processing components, energy harvesting and storage, sensing, and bioelectronics. The expanded capability of lasers to participate in multiple fabrication steps at different implementation levels, from material engineering to device processing, indicates their future applicability to next-generation electronics, where more accessible, green microfabrication approaches integrate lasers as comprehensive tools., (© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.)

Solution-based memristors deposited by inkjet printing technique have a strong technological potential based on their scalability, low cost, environmentally friendlier processing by being an efficient technique with minimal material waste. Indium-gallium-zinc oxide (IGZO), an oxide semiconductor material, shows promising resistive switching properties. In this work, a printed Ag/IGZO/ITO memristor has been fabricated. The IGZO thickness influences both memory window and switching voltage of the devices. The devices show both volatile counter8wise (c8w) and non-volatile 8wise (8w) switching at low operating voltage. The 8w switching has a SET and RESET voltage lower than 2 V and - 5 V, respectively, a retention up to 10 5  s and a memory window up to 100, whereas the c8w switching shows volatile characteristics with a low threshold voltage (Vth < - 0.65 V) and a characteristic time (τ) of 0.75 ± 0.12 ms when a single pulse of - 0.65 V with width of 0.1 ms is applied. The characteristic time alters depending on the number of pulses. These volatile characteristics allowed them to be tested on different 4-bit pulse sequences, as an initial proof of concept for temporal signal processing applications., (© 2024. The Author(s).)

Solution-based memristors have gained significant attention in recent years due to their potential for the low-cost, scalable, and environmentally friendly fabrication of resistive switching devices. This study is focused on the fabrication and characterization of solution-based molybdenum trioxide (MoO 3 ) memristors under different annealing temperatures (200 to 400 °C). A MoO 3 ink recipe is developed using water as the main solvent, enabling a simplified and cost-effective fabrication process. Material analysis reveals the presence of a Mo 6+ oxidation state and an amorphous structure in the films annealed up to 250 °C. Electrical tests confirm a bipolar resistive switching behavior in the memristors according to the valence change mechanism (VCM). Endurance tests demonstrate stable memristors, indicating their robust nature after multiple cycles. Memristors annealed at 250 °C exhibit a nonvolatile behavior with a retention time up to 10 5 s under ambient air conditions. The high reproducibility observed in these memristors highlights their potential for practical applications and scalability., Competing Interests: The authors declare no competing financial interest., (© 2024 The Authors. Published by American Chemical Society.)

The objective of the study was to compare the reproductive performances of gilts and weaned sows grouped at different days after insemination. The study was conducted on a sow farm in the Midwest of Paraná State, Brazil, using animals from the Camborough genetic line (PIC®, Patos de Minas, Brazil, Landrace × Large White crossbred). The groups of comparison have considered the distribution of gilts (n = 407) and sows (parity 1 to 5; n = 843) according to the day of group housing in collective pens in relation to the day of last insemination (AI). Thus, gilts were distributed in four groups of comparison: group housing on days 1, 2, 3, or 4 after the last AI (AI). Sows were distributed in three groups of comparison: group housing on the day after the last AI (0), at day 1 or 2 after the last AI. Farrowing rate (FR), the total number of piglets born (TB), and return to estrus (RE) were recorded. In a subsample (254 gilts and 622 sows), the presence and the score of skin lesions (0, no lesions; 1, low; 2, moderate; or 3, high) were evaluated 24 and 48 h after mixing. Statistical analysis was performed using the SAS ®  9.4 software using the GLIMMIX procedure. Comparisons of means were performed using the Tukey-Kramer test and frequencies by logistic regression. Group housing gilts on different days after insemination did not affect FR, TB, and RE (P ≥ 0.79). However, sows mixed 2 days after AI had a reduction in TB compared to those mixed on day 1 (P = 0.05), without differences from sows mixed on the day of the last AI. All the females had low (score 1; 60.5%) or moderate (score 2; 39.5%) skin lesions. For both female categories, the presence of low or moderate lesion scores did not affect ER, FR, and TB (P ≥ 0.25). Fights within 48 h were not severe enough to compromise reproductive performance (P ≥ 0.25). In conclusion, group housing gestating sows 2 days after breeding compromised litter size; however, mixing gilts on days 1 to 4 after breeding did not impair reproductive performance., (© 2022. The Author(s), under exclusive licence to Springer Nature B.V.)

Pasture-feeding in lambs has been associated with dark-coloured meat and high meat contents of volatile indoles (skatole and indole), which may be responsible for sensory defects. The risk of off-flavours is even higher when lambs graze alfalfa, because it is particularly rich in rapidly degradable proteins. Here, we investigated whether a short concentrate stall-finishing period in lambs that previously grazed alfalfa influences meat sensory quality traits. We compared three feeding treatments, using three groups of 10 male Romane lambs: grazing alfalfa (A), stall-feeding with concentrate and straw (S), and stall-finishing with concentrate and straw for 21 days after previously grazing alfalfa (AS). During stall-feeding, the concentrate was given at a level adjusted to achieve a similar growth pattern in all treatment groups, and the length of the trough was sufficient for all lambs to have access to the feeds at the same time. Lamb live weight and age at slaughter, and carcass conformation and fatness were similar for all treatment groups. Perirenal fat skatole content was lower in AS and S lambs than in A lambs (P < 0.001 and P < 0.05, respectively), and not significantly different between AS and S lambs. Perirenal fat indole and dorsal fat skatole concentrations were lower in AS lambs than in A lambs (P < 0.05 and P < 0.005, respectively), the other pairwise comparisons being not significant. There was no treatment effect on dorsal fat indole content. Longissimus et lumborum muscle colour coordinates differed between pasture-fed and stall-fed lambs, with a lower lightness (P < 0.005) and greater redness and hue angle (P < 0.001 and P < 0.01, respectively) in pasture-fed lambs, but muscle colour coordinates did not differ between A and AS lambs. A 21-d concentrate-based stall-finishing period in lambs previously raised on alfalfa pasture therefore markedly reduced fat indoles concentrations compared to lambs grazed on alfalfa until slaughter but did not change meat colour., (Copyright © 2022 The Authors. Published by Elsevier B.V. All rights reserved.)

Indium oxide (In 2 O 3 )-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In 2 O 3 thin films and evaluating different annealing parameters on TCO's properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped In 2 O 3 when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10 -2 Ω.cm, a mobility of 6.65 cm 2 /V.s, and a carrier concentration of 1.72 × 10 19 cm -3 . Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10 -3 Ω.cm, a mobility of 21 cm 2 /V.s, and a carrier concentration of 7.98 × 10 19 cm -3 , in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.

Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 10 5 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems., Competing Interests: The authors declare no competing financial interest., (This journal is © The Royal Society of Chemistry.)

This study was carried out to evaluate the effects of replacing soybean meal by castor bean meal on nutrient intake, digestibility, animal performance, ingestive behavior activities, carcass characteristics, and fatty acid profile from steers finished in pasture. Crossbred steers were weighed to determine the initial body weight (331.6 ± 37.4 kg), which were kept in 4 paddocks (8 animals/paddock), on pastures of Brachiaria decumbens during the finishing phase. Dietary treatments included CC00-without castor bean meal; CC33-153 g/kg of castor bean meal; CC66-308 g/kg of castor bean meal; and CC100-434 g/kg of castor bean meal. No treatment effects were detected (P > 0.05) for final body weight, average daily gain, feed efficiency, and hot carcass weight. The DM, CP, NDF, and NFC total intake were lowest (P < 0.01) for steers fed CC100 diet than others. No treatment effects were detected (P > 0.05) for digestibility. For ingestive behavior activities, data on DM and NDF from feeding rate were greater (P < 0.01) in CC00 v. castor bean meal steers. DM and NDF from rumination rate were greater (P < 0.01) in CC33 v. CC100 steers that was the lowest. Carcass measures, carcass composition, chemical composition of Longissimus thoracis muscle, and profile and the sum of fatty acids were not affected (P > 0.05) by castor bean meal replacement on the diets. Results from this experiment suggest that castor bean meal may replace soybean meal in pasture supplementation without altered digestibility, carcass characteristics, and fatty acid profile.

Plant-based biomass (CFB (carnauba fruit biomass)) obtained from the fruit exocarp of the species Copernicia prunifera (Mill.) H.E. Moore (carnauba) was evaluated for its viability as an adsorbent of potentially toxic metals in aqueous medium. The CFB was characterized by powder X-ray spectroscopy (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and zeta potential to investigate the morphology of the biosorbent and its interaction with water soluble metal ions of Pb and Cd. The biomass presents an amorphous structure, with negative zeta potential (- 2.59 mV), and the presence of functional groups such as O-H, C-O-C, C-H, and C=O. The removal potential of Pb(II) and Cd(II) was performed in a batch system, and monoelement solutions were tested to assess the effects of adsorbent dose and initial metal ion concentration, pH at the point of zero charge (pH PZC ), sorption kinetics, and adsorption capacity. The most appropriate adsorbent concentration was 5 g/L, and sorption studies were carried out at pH 5.0 (pH PZC  = 4.68), in which the surface of the adsorbent shows negative charges and favors the adsorption of metal ions. Kinetic studies showed that the pseudo-second order model best fit the experimental data, and equilibrium was reached at 120 min of contact time. The experimental sorption capacity (SC exp ) for Pb and Cd was around 28 and 34 mg/g, respectively, and six different non-linear isotherm models were used to describe the sorption phenomena, among them, four with 2 parameters, i.e., Langmuir, Freundlich, Temkin, and Dubinin-Radushkevich (DR), respectively, and two with 3 parameters, namely, SIPS and Hill. The non-linear Temkin and Freundlich isotherm models best fit the experimental data for Pb(II) and Cd(II), respectively. According to the Langmuir model, Q max was 26 mg/g and 58 mg/g for Pb(II) and Cd(II), respectively, indicating the efficiency of CFB as a new alternative to conventional methods for the removal of potentially toxic metals from aqueous medium.

Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra-low power and high-density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up-scale production. Solution-processing methods have been improved, being now a reliable technology that offers many advantages for resistive random-access memory (RRAM) such as high versatility, large area uniformity, transparency, low-cost and a simple fabrication of two-terminal structures. Solution-based metal oxide RRAM devices are emergent and promising non-volatile memories for future electronics. In this review, a brief history of non-volatile memories is highlighted as well as the present status of solution-based metal oxide resistive random-access memory (S-RRAM). Then, a focus on describing the solution synthesis parameters of S-RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S-RRAM that will allow their large-area manufacturing. Finally, the figures of merit and the main challenges in S-RRAMs are discussed and future trends are proposed., (© 2020 Wiley-VCH GmbH.)

Organolead halide perovskites have drawn significant attention from the scientific community as one of the most attractive materials in optoelectronics, especially in the field of photovoltaics. In this study, we focus on using halide perovskites in processing thin film transistors (TFTs). Halide perovskites have high solution processability and excellent carrier transport characteristics, in particular for holes. The present work aims to fill a gap in oxide-based technology. It concerns the process of using high-stable and reliable p - type oxide-based devices to target CMOS technology (complementary metal-oxide-semiconductor). We report on a solution-processed high-performance TFT based on methylammonium lead iodide (CH 3 NH 3 PbI 3 ) perovskite semiconductor films, which shows promise for devices that can be simple to manufacture with high reliability, reproducibility, and excellent stability in atmospheric conditions. To achieve a highly stable perovskite semiconductor film, we introduce diethylsulfide in the perovskite precursor. The TFT shows a stable p - type behavior when operated at low voltages (≤-2 V) and has a current modulation of >10 4 , an almost negligible hysteresis, and average saturation mobility of about 18.8 cm 2 V -1 s -1 , taken over 50 devices tested (the highest one measured was ∼23.2 cm 2 V -1 s -1 ). This is the highest value until now reported in the literature. In addition, we demonstrate that perovskite TFTs can be fabricated at temperatures as low as 150 °C on flexible substrates with a saturation mobility of ∼11.5 cm 2 V -1 s -1 . The high-performance perovskite TFT with excellent stability is a promising candidate for the next generation of p-type transistors for a plethora of low-cost electronics applications.

Solution combustion synthesis (SCS) has been widely used to produce simple and complex oxides with a desired morphology (size and shape). SCS is valuable due to low cost, simplicity and energy efficient synthesis. To guarantee the best molecular-level mixing of reactants in an aqueous or solvent-based solution some parameters need to be controlled, such as fuel type, metal cations precursors, stoichiometry ratio (φ), pH effect, atmosphere and initiation type. These determine the final properties of the oxide materials, providing the potential to reach different morphologies, which are essential for their final applications. This Review article focuses on the crucial parameters in SCS and how these affect the overall materials properties from nanostructures to thin films. To finalize, special attention is given to the application of SCS to form metal oxide thin films at low temperature and their application in thin film transistors (TFTs)., (© 2020 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-к dielectric; AlO x . The devices show saturation mobility of 3.2 cm 2 V -1 s - 1 , I On / I Off of 10 6 , SS of 73 mV dec -1 and V On of 0.18 V, thus demonstrating promising features for low-cost circuit applications., Competing Interests: The authors declare no competing financial interest.

This work reports on the role of structure and composition on the determination of the performances of p-type SnO x TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (O pp ) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm² V -1 s -1 and on-off ratio above 7 × 10⁴, operating at the enhancement mode with a saturation voltage of -10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnO x TFTs with different methods and using different device configurations.

Lately, resistive switching memories (ReRAM) have been attracting a lot of attention due to their possibilities of fast operation, lower power consumption and simple fabrication process and they can also be scaled to very small dimensions. However, most of these ReRAM are produced by physical methods and nowadays the industry demands more simplicity, typically associated with low cost manufacturing. As such, ReRAMs in this work are developed from a solution-based aluminum oxide (Al 2 O 3 ) using a simple combustion synthesis process. The device performance is optimized by two-stage deposition of the Al 2 O 3 film. The resistive switching properties of the bilayer devices are reproducible with a yield of 100%. The ReRAM devices show unipolar resistive switching behavior with good endurance and retention time up to 10 5 s at 85 °C. The devices can be programmed in a multi-level cell operation mode by application of different reset voltages. Temperature analysis of various resistance states reveals a filamentary nature based on the oxygen vacancies. The optimized film was stacked between ITO and indium zinc oxide, targeting a fully transparent device for applications on transparent system-on-panel technology.

This study aimed to evaluate the effect of calcium lignosulfonate associated with whole cottonseed in high-concentrate diets for sheep. Eight Dorper crossbred sheep with an average live weight of 42.5 ± 1.70 kg were assigned to two 4 × 4 Latin squares. The following experimental diets were evaluated: control diet (without calcium lignosulfonate) and diets with inclusion of 50, 100, and 150 g of calcium lignosulfonate/kg fresh matter. Diets were composed of soybean meal, ground corn, and whole cottonseed. Feed intake, digestibility, metabolic characteristics, and feeding behavior were evaluated. The intake of nutritional components did not show significant differences as a function of the lignosulfonate levels in the diet; however, the increase in calcium lignosulfonate levels linearly decreased the dry matter digestibility. Rumen ammonia nitrogen concentrations decreased linearly as the lignosulfonate levels in the diets were increased. There was no effect of lignosulfonate levels on blood parameters or feeding behavior of the animals. The use of lignosulfonate associated with cottonseed decreases the digestibility of dry matter and the concentration of rumen ammonia nitrogen, but does not change the intake of nutritional components, the blood parameters, or the feeding behavior of sheep.

In this study, we evaluated the effects of including cassava wastewater in the diet on the feeding behavior of feedlot lambs in 35 male uncastrated Santa Inês × Dorper crossbred lambs at an approximate age of 3 months, with an average live weight of 20.0 ± 3.4 kg. Diets were formulated with hay of cassava shoots (roughage) and a concentrate based on corn and soybean, with a roughage:concentrate ratio of 50:50, plus inclusion of cassava wastewater at the levels of 0, 12, 24, 36, or 48 g/kg of the total diet. Feeding behavior was evaluated between the 46th and 52nd days of the experiment. Increasing cassava wastewater levels in the diet reduced (P < 0.05) the intakes (kg/day) of dry matter and neutral detergent fiber as well as the efficiency of rumination (g/cud and g/h) of dry matter and neutral detergent fiber. The other behavioral parameters were not affected by wastewater inclusion in the diet. Therefore, the inclusion of up to 48 g/kg of cassava wastewater on fresh matter of diets is not recommended for feedlot lambs.

In the past decade, solution-based dielectric oxides have been widely studied in electronic applications enabling the use of low-cost processing technologies and device improvement. The most promising are the high-κ dielectrics, like aluminum (AlO x ) and hafnium oxide (HfO x ), that allow an easier trap filling in the semiconductor and the use of low operation voltage. However, in the case of HfO x , a high temperature usually is needed to induce a uniform and condensed film, which limits its applications in flexible electronics. This paper describes how to obtain HfO x dielectric thin films and the effect of their implementation in multilayer dielectrics (MLD) at low temperatures (150 °C) to apply in thin film transistors (TFTs) using the combination of solution combustion synthesis (SCS) and ultraviolet (UV) treatment. The single layers and multilayers did not show any trace of residual organics and exhibited a small surface roughness (<1.2 nm) and a high breakdown voltage (>2.7 MV·cm -1 ). The resulting TFTs presented a high performance at a low operation voltage (<3 V), with high saturation mobility (43.9 ± 1.1 cm 2 ·V -1 ·s -1 ), a small subthreshold slope (0.066 ± 0.010 V·dec -1 ), current ratio of 1 × 10 6 and a good idle shelf life stability after 2 months. To our knowledge, the results achieved surpass the actual state-of-the-art. Finally, we demonstrated a low-voltage diode-connected inverter using MLD/IGZO TFTs working with a maximum gain of 1 at 2 V.

Solution processing of amorphous metal oxides has lately been used as an option to implement in flexible electronics, allowing a reduction of the associated costs and high performance. However, the research has focused more on the semiconductor layer rather than on the insulator layer, which is related to the stability and performance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. An optimized dielectric layer was obtained for an annealing of 30 min assisted by FUV exposure. These thin films were applied in gallium-indium-zinc oxide TFTs as dielectrics showing the best results for TFTs annealed at 180 °C with FUV irradiation: good reproducibility with a subthreshold slope of 0.11 ± 0.01 V dec -1 and a turn-on voltage of -0.12 ± 0.05 V, low operating voltage, and good stability over time. Finally, the dielectric layer was applied in solution-processed indium oxide (In 2 O 3 ) TFTs at low temperature, 180 °C, with a short processing time being compatible with flexible electronic applications.

Twenty-seven animals (½ Angus - ½ Nellore) were fed for four months with one of the following diets: without addition of essential oils (E0.0), with 3.5 (E3.5) or 7 (E7.0) g/animal/day of an essential oil blend (oregano, garlic, lemon, rosemary, thyme, eucalyptus and sweet orange). Chemical composition, fatty acid profile and meat color were evaluated in Longissimus muscle. In addition, the effects of aging (one, seven and 14days) on the meat water holding capacity, texture and lipid oxidation were evaluated. Essential oils had no effect on chemical and fatty acid composition, meat color, water holding capacity or texture, but an inclusion of 3.5g/day decreased lipid oxidation. The addition of 7.0g/animal/day had a pro-oxidant effect on meat during aging and resulted in higher values for lipid oxidation at 14days of aging. Aging significantly affected thawing losses and texture. A dose of 3.5g/animal/day could be recommended in feedlot animals, but greater doses could have a pro-oxidant effect., (Copyright © 2016 Elsevier Ltd. All rights reserved.)

Current study aimed to evaluate the performance of bulls (1/2 Purunã vs 1/2 Canchim) slaughtered at two ages and three different weights. One hundred and thirteen bulls were divided into two slaughter ages (16 and 22 months) and three different slaughter weights (light, 422 kg; medium, 470 kg; and heavy, 550 kg). The body weight was higher for bulls slaughtered at 16 months. Daily gain, carcass weight and dressing were higher for bulls slaughtered at 16 months. Feed intake was higher for bulls slaughtered at 22 months although feed efficiency was better for bulls slaughtered at 16 months. Carcass characteristics were better for bulls slaughtered at 16 months. The percentages of muscle, fat and bone and meat characteristics were similar between two slaughter ages. Feed intake and animal performance was lower for lighter animals. Feed conversion and carcass dressing were similar in the three slaughter weights. Muscle percentage was higher for heavier animals but fat and bone percentages were lower. Slaughter weight had no effect on meat characteristics.

Background: WHO guidelines recommend zinc supplementation as a key adjunct therapy for childhood diarrhea in developing countries, however zinc's anti-diarrheal effects remain only partially understood. Recently, it has been recognized that low-grade inflammation may influence stunting. In this study, we examined whether oral zinc supplementation could improve weight, intestinal inflammation, and diarrhea in undernourished weanling rats., Methods: Rats were undernourished using a northeastern Brazil regional diet (RBD) for two weeks, followed by oral gavage with a saturated lactose solution (30 g/kg) in the last 7 days to induce osmotic diarrhea. Animals were checked for diarrhea daily after lactose intake. Blood was drawn in order to measure serum zinc levels by atomic absorption spectroscopy. Rats were euthanized to harvest jejunal tissue for histology and cytokine profiles by ELISA. In a subset of animals, spleen samples were harvested under aseptic conditions to quantify bacterial translocation., Results: Oral zinc supplementation increased serum zinc levels following lactose-induced osmotic diarrhea. In undernourished rats, zinc improved weight gain following osmotic diarrhea and significantly reduced diarrheal scores by the third day of lactose intake (p < 0.05), with improved jejunum histology (p < 0.0001). Zinc supplementation diminished bacterial translocation only in lactose-challenged undernourished rats (p = 0.03) compared with the untreated challenged controls and reduced intestinal IL-1β and TNF-α cytokines to control levels., Conclusion: Altogether our findings provide novel mechanisms of zinc action in the setting of diarrhea and undernutrition and support the use of zinc to prevent the vicious cycle of malnutrition and diarrhea.

The effects of corn replacement by different glycerine levels on carcass characteristics and meat quality of 40 young Purunã bulls, weighing 209 ± 33.3 kg and 8 ± 0.9 months old, finished in feedlot, were evaluated. The treatments were G00: without glycerine; G06: 6% glycerine; G12: 12% glycerine; and G18: 18% glycerine in the diets, on a DM basis. Hot weight, dressing, conformation and length carcass, leg length and cushion thickness were not (P>0.05) modified by different glycerine levels in the diets. Glycerine in the diets did not (P>0.05) affect fat thickness, Longissimus muscle area, marbling and texture. Muscle, fat and bone percentages were not (P>0.05) influenced by glycerine levels in the diets. No changes (P>0.05) in lightness (L*), redness (a*) and yellowness (b*) on LM occurred when glycerine was included at 0, 6, 12 or 18% in the diet. There was no (P>0.05) difference in LM moisture, ash, crude protein and total lipids when feeding different glycerine levels. The inclusion of glycerine decreased (P<0.01) total saturated (10.8%), and increased monounsaturated (7.4%) and poly-unsaturated (44.0%) fatty acids, which resulted in a higher PUFA:SFA ratio (0.57)., (© 2013. Published by Elsevier Ltd. All rights reserved.)

Objective: The effect of zinc and glutamine on brain development was investigated during the lactation period in Swiss mice., Methods: Malnutrition was induced by clustering the litter size from 6-7 pups/dam (nourished control) to 12-14 pups/dam (undernourished control) following birth. Undernourished groups received daily supplementation with glutamine by subcutaneous injections starting at day 2 and continuing until day 14. Glutamine (100 mM, 40-80 microL) was used for morphological and behavioral studies. Zinc acetate was added in the drinking water (500 mg/L) to the lactating dams. Synaptophysin and myelin basic protein brain expressions were evaluated by immunoblot. Zinc serum and brain levels and hippocampal neurotransmitters were also evaluated., Results: Zinc with or without glutamine improved weight gain as compared to untreated, undernourished controls. In addition, zinc supplementation improved cliff avoidance and head position during swim behaviors especially on days 9 and 10. Using design-based stereological methods, we found a significant increase in the volume of CA1 neuronal cells in undernourished control mice, which was not seen in mice receiving zinc or glutamine alone or in combination. Undernourished mice given glutamine showed increased CA1 layer volume as compared with the other groups, consistent with the trend toward increased number of neurons. Brain zinc levels were increased in the nourished and undernourished-glutamine treated mice as compared to the undernourished controls on day 7. Undernourished glutamine-treated mice showed increased hippocampal gamma-aminobutyric acid and synaptophysin levels on day 14., Conclusion: We conclude that glutamine or zinc protects against malnutrition-induced brain developmental impairments., (Copyright 2010 Elsevier Inc. All rights reserved.)

Total mercury content was evaluated in water and suspended sediment samples of the Moji-Guaçu river and in water and bottom sediment of its 3 marginal lagoons (Catingueiro, Barrinha, and Rio das Pedras), located downstream of the sampling point in the main channel. In all situations, low Hg concentrations were found in suspended and bottom sediments. Aluminum was used as a geochemical tracer to normalize the Hg concentrations in the sediment cores from the Rio das Pedras lagoon (r = 0.92). It was estimated that the Moji-Guaçu river transports up to 19 kg Hg yr(-1), 65% in the dissolved form and 35% adsorbed onto particulate matter. Following an acute toxic stage observed in the years 1970-1980, the basin has been restored to its original conditions mainly by natural recovery and a general reduction in Hg input to the ecosystem.