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The high-density defect states existing at the grain boundaries and heterojunction interfaces induce nonradiative charge recombination and ion migration processes within perovskite film, which seriously impair the device efficiency and stability. Here, we propose a novel synergistic ion-anchoring passivation (SIP) strategy for high-performance perovskite solar cells, by designing a multifunctional molecule to heal the charged defects via electrostatic interactions. The anion and cation species of the multifunctional molecule are rationally screened via high-throughput DFT simulation and experimental verification, which act as efficient surface passivation agents to heal the lead- and iodine-related defects. As a result, the defect-less perovskite films deliver encouraging device power conversion efficiency >24% with negligible hysteresis. A remarkable open-circuit voltage ( Voc ) of 1.17 V was obtained with a Voc deficit of 370 mV, featuring the outstanding defect-passivation capability of the SIP strategy. Moreover, the SIP-treated devices show exceptional ambient stability and maintain 70% of the initial efficiency after 150 h of high humidity exposure (relative humidity 70%-80%). Our results highlight the importance of the rational design of passivation agents to realize high-performance perovskite electronics.

Copper and iron are the basic metal elements that have attracted much attention in industry. Prussian blue (PB) is a significant class of metal-organic frameworks (MOFs); however, the lack of such linkages between the structure and properties, as well as properties differences, limits their potential applications. In this paper, the Cu-based Prussian blue nanocubes with and without Fe doping were synthesized. With the increasing reaction time, the morphology of the Cu-based Prussian blue nanocubes without Fe doping (PB:Cu NCs) changes from cuboidal to circular, and finally grows back to cuboidal. However, Cu-based Prussian blue nanocubes with Fe doping (PB: CuFe NCs) grow directly from the cube and eventually collapse. The nanocubes show a notable red shift with the tunable spectra from 400 nm to 700 nm. Compared with PB: Cu NCs, the PB: CuFe NCs have higher temperature rise under 808 nm irradiation and better photothermal efficacy. The catalytic efficiency of PB: CuFe NCs changes with the pH and reaches its maximum value of 1.021 mM with a pH of 5.5. The enhanced catalytic reaction by the near-infrared radiation plasmonic photothermal effect is also confirmed. This work highlights the potential of the developed PB: Cu and PB: CuFe NCs for photothermal-enhanced co-catalysis nanomaterials.

Polarization-sensitive photodetectors are the core of optics applications and have been successfully demonstrated in photodetectors based on the newly-emerging metal-halide perovskites. However, achieving high polarization sensitivity is still extremely challenging. In addition, most of the previously reported photodetectors were concentrated on 1D lead-halide perovskites and 2D asymmetric intrinsic structure materials, but suffered from being external bias driven, lead-toxicity, poor stability and complex processes, severely limiting their practical applications. Here, we demonstrate a high-performance polarization-sensitive and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu 2 I 3 /GaN heterostructure. By combining the anisotropic morphology and asymmetric intrinsic structure of CsCu 2 I 3 dendrites with the isotropic material GaN film, a high specific surface area and built-in electric field are achieved, exhibiting an ultra-high polarization selectivity up to 28.7 and 102.8 under self-driving mode and -3 V bias, respectively. To our knowledge, such a high polarization selectivity has exceeded those of all of the reported perovskite-based devices, and is comparable to, or even superior to, those of the conventional 2D heterostructure materials. Interestingly, the unsealed device shows outstanding stability, and can be stored for over 2 months, and effectively maintained the performance even after repeated heating (373K)-cooling (300K) for different periods of time in ambient air, indicating a remarkable temperature tolerance and desired compatibility for applications under harsh conditions. Such excellent performance and simple method strongly show that the CsCu 2 I 3 /GaN heterojunction photodetector has great potential in practical applications with high polarization-sensitivity. This work provides a new insight into designing novel high-performance polarization-sensitive optoelectronic devices.