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This paper presents a theoretical analysis of an nBp infrared barrier detector's performance intended to operate at a room temperature (300 K) based on A III B V materials-In 1- x Ga x As y Sb 1- y quaternary compound-lattice-matched to the GaSb substrate with a p-n heterojunction ternary Al 1- x Ga x Sb barrier. Numerical simulations were performed using a commercial Crosslight Software-package APSYS. The band structure of the nBp detector and the electric field distribution for the p-n heterojunction with and without a potential barrier were determined. The influence of the barrier-doping level on the detector parameters was analyzed. It was shown that Shockley-Read-Hall (SRH) recombination plays a decisive role in carrier transport for lifetimes shorter than 100 ns. The influence of the absorber/barrier thickness on the detector's dark current density and photocurrent was investigated. It was shown that valence band offset does not influence the device's performance. The quantum efficiency reaches its maximum value for an absorber's thickness of ~3 μm. The performed simulations confirmed the possibility of the detector's fabrication exhibiting high performance at room temperature based on quaternary compounds of A III B V materials for the short wavelength infrared range.

Thermophotovoltaic conversion using heat to generate electricity in photovoltaic cells based on the detraction of thermal radiation suffers from many engineering challenges. The focus of this paper is to study the nanostructure of AlGaAsSb for thermophotovoltaic energy conversion using lattice-matched heterostructures of GaSb-based materials in order to overcome the current challenges. The XAFS spectroscopy technique was used to analyze electronic structures and optical properties of GaSb, (Al, In) GaSbAs. The XAFS spectroscopy analysis showed a powerful decay at peak intensity that reveals to be related to a loss in Sb amount and light As atoms replaced in Sb atoms by 25%. Moreover, it was found that Al/In doped samples have highly symmetric data features (same atomic species substitution). The narrow direct bandgap energy, E g of Al 0.125 Ga 0.875 Sb 0.75 As 0.25 material raised (0.4-0.6 eV) compared to conventional photovoltaic cell bandgap energy (which is generally less than 0.4 eV) with weak absorption coefficients. The thermoelectric properties of AlGaAsSb computed via Botlztrap code showed that the electrons made up the majority of the charge carriers in AlGaAsSb. This nanostructure material exhibited a higher and acceptable figure of merit and demonstrated a promising thermoelectric material for solar thermophotovoltaic applications.