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1. Optical characterization of the ZnSe epilayers and ZnCdSe/ZnSe quantum wells grown on Ge/[Ge.sub.0.95][Si.sub.0.05]/[Ge.sub.0.9][Si.sub.0.1]/Si virtual substrates

Author

J. T. Ku, M. C. Kuo, J. L. Shen, K. C. Chiu, T. H. Yang, G. L. Luo, C. Y. Chang, Y. C. Lin, C. P. Fu, D. S. Chuu, C. H. Chia, and W. C. Chou

Subjects
Physics
Abstract

Several approaches are employed to grow high-quality ZnSe epilayers on Ge/[Ge.sub.0.95][Si.sub.0.05]/[Ge.sub.0.9][Si.sub.0.1]/Si virtual substrates and the ZnSe epilayers are characterized by photoluminescence spectroscopy. In the high-temperature regime, the thermal quenching of the excitonic emission intensity from ZnCdSe quantum well structures is governed by the thermal activation of carriers from quantum-well-confined states into barrier states.

Published
2006

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