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Evaluation of the conductance oscillations in a quantum box indicates that controllable impurity in quantum box induces a quantum interference effect that activates well defined conductance oscillations. Modifications in the impurity potential give rise to electronic oscillations from destructive and constructive interference processes. The oscillations depend on impurity size while strong oscillations also arise in the presence of realistic structural parameters.

A new no-barrier quantum interferometer design reveals high quantum interference in ballistic areas where the structure examined is smaller than the elastic mean free path and the phase coherence length. Recursive Green's function method calculations validate the production of strong quantum interference conductance oscillation by varying the width of one branch. These conductance oscillations are useful for device length and liquid-helium temperatures.

A quantum-mechanical free electron model is used for analyzing a spin polarized transport and current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR). The study has confirmed that modification of the free electron model by quantum-mechanical methods is applied for calculating spin polarized transport and CPP-GMR in a specific material system.

The crossover between the diffusive and quasi-ballistic regimes of transport in submicron semiconductor channels is analyzed. The results have highlighted the microscopic signatures of quasi-ballistic transport as well as the crossover between the diffusive and quasi-ballistic regimes of transport.