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1. Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: fabrication and electrical testing

Author

Miyake, M., Scott, J.F., Lou, X.J., Morrison, F.D., Nonaka, T., Motoyama, S., Tatsuta, T., and Tsuji, O.

Subjects
Ruthenium -- Chemical properties, Ruthenium -- Electric properties, Silicon compounds -- Chemical properties, Silicon compounds -- Electric properties, Lead compounds -- Chemical properties, Lead compounds -- Electric properties, Physics
Abstract

The conformal deposition of both Ru[O.sub.2] electrodes and Pb[Zr.sub.x][Ti.sub.1-x][O.sub.3] (PZT) capacitors in submicron Si trenches through the same in situ liquid source mist processing is described. The studies have shown that a single inexpensive processing has produced fully electroded dynamic random access memory trenched capacitors with high aspect ratios and commercial electrical performance.

Published
2008

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