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1. Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications

Author

Han-Su Kim, Ya-Hong Xie, Marc DeVincentis, Tatsuo Itoh, and Jenkis, Keith A.

Subjects
Very-large-scale integration -- Research, Silicon -- Research, Silicon -- Acoustic properties, Physics
Abstract

The demonstration of anisolation technology for radio frequency applications based on unoxidized porous Si is give. It is observed that with the additional advantage of planar topography and mechanical integrity, the unoxidized PS is an outstanding material for radio frequency (rf) isolation in Si very large scale integration (VLSI).

Published
2003

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