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The single-charge transfer operation in two-dimensional (2D) random-multidot channel field-effect transistor (FETs) using orthodox theory of the Coulomb blockade phenomenon is numerically studied. It is found that the turnstile operation meaning that electrons are transferred one by one could be performed in the 2D multidot circuit by applying an alternating V(sub g).

Silicon/edge-oxide/polysilicon tunnel devices using a very thin silicon-on-insulator film as a cathode were fabricated to study the electron tunneling properties of nanometer-scale silicon. To this end, the tunneling current from the edge of the 5-nm-thick SIMOX-silicon layers was measured in terms of the polysilicon front gate bias. The results indicated that a positive bias at the front induces the current-gate voltages characteristics to exhibit a steplike behavior.

Single-electron turnstile operation in common-gated one-dimensional arrays of four tunnel junctions having inhomogeneous junction capacitances is analyzed. Postfabrication control of capacitance dispersion in multijunction FETs is achieved, which has resulted in successful turnstile operation.

The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements were performed to investigate the effect of the nanometer-scale corrugation on gap state and fixed charge densities at Si (001) metal-oxide-semiconductor (MOS) capacitors whose SiO2/Si interface has nanometer-scale Si protrusions with a high density. G/omega -V curves showed increase of gap state density for the high-index interfaces, indicating effectiveness of orientation dependence on the nanometer region.