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Byline: Barley Li High-frequency switch mode circuits, such as those for power factor correction (PFC) using continuous conduction mode (CCM), require diodes that have low switching losses. For conventional silicon [...]

The Thailand Board of Investment is investing $350 million in a joint venture with Hana Microelectronics and PTT to establish the country's first silicon carbide chip fabrication facility. Targeting electric [...]

Cohu announced that a leading European customer has selected Cohu's Neon system for high-speed handling and inspection of high-power SiC dies in burn-in test applications. This expands Cohu's products into [...]

Byline: Akanksha Gaur It plays a vital role in electric vehicle (EV) infrastructure, contributing to the efficient charging and power management systems required to support the growing EV ecosystem. Littelfuse, [...]

Byline: Please Enter Your Name Here Ideal for high-efficiency power solutions in data center, EV infrastructure, and industrial equipment Littelfuse, an industrial technology manufacturing company empowering a sustainable, connected, and [...]

Byline: TimesTech Affordability combined with high performance and efficiency is the key to making electric mobility accessible to a broader market. That's why InfineonTechnologies AG is introducing the HybridPACK Drive [...]

Byline: Autocar Pro News Desk STMicroelectronics, a global semiconductor company, has introduced its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology. This latest innovation sets new standards in power efficiency, density, [...]

Byline: Kajal Mehra, In the vast expanse of space, where every ounce of weight counts and reliability is non-negotiable, the quest for advanced materials capable of withstanding the rigors of [...]

WORLDWIDE COMPUTER PRODUCTS NEWS-September 24, 2024-Soitec and Resonac partner to accelerate SiC adoption in EVs (C)1995-2024 M2 COMMUNICATIONS http://www.m2.co.uk Semiconductor materials manufacturers Soitec (Euronext Paris:SOI) and Resonac Corporation (formerly Showa [...]

Byline: Shubha Mitra With the substrate factory set to start production two months early, STMicroelectronics and Sanan's $3.2 billion joint silicon carbide wafer fabrication project in Chongqing is in the [...]

Navitas Semiconductor announced the release of a portfolio of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L and TOLL surface-mount packages. Navitas' proprietary 'trench-assisted planar' technology provides world-leading performance over temperature and [...]

ROHM introduces four new models in the TRCDRIVE pack series, featuring 2-in-1 SiC moulded modules for electric vehicle traction inverters. The series includes two 750V models and two 1200V models, [...]

Vishay Intertechnology, Inc. has introduced 16 new Gen 3 1200V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) design, these diodes offer high surge current robustness, low [...]

Navitas Semiconductor extended its new portfolio of Gen-3 'Fast' 650 V SiC MOSFETs into a thermally-enhanced, rugged, high-speed, surface-mount TOLL package designed for demanding, high-power, high-reliability applications. Combining high-power capability [...]

Byline: Sapana Pandya Infineon Technologies AG announced that its CoolSiC 2000 V modules have been selected by Daihen Corporation for their innovative unit-type power conditioners for grid storage batteries. In [...]

Byline: Akanksha Gaur With high surge current robustness, low forward voltage drop, and reduced capacitive charge, these diodes are ideal for demanding applications such as solar power inverters, energy storage [...]

Vehicle electrification is advancing towards a decarbonised society, necessitating efficient, compact, and lightweight electric powertrain systems. SiC power devices are crucial but face size and loss challenges. ROHM's new TRCDRIVE [...]

Byline: TimesTech Vishay Intertechnology, introduced 16 new Gen 3 1200 V silicon carbide Schottky diodes. Vishay Intertechnology Featuring a merged PIN Schottky design, the Vishay Semiconductors devices combine high surge [...]

Byline: Akanksha Gaur Achieves industry-leading power density by integrating 4th Generation SiC MOSFETs in a compact package, setting a new standard in the electric vehicle market with innovative, efficient, and [...]

Byline: John Li In 2008, the commercialization of the silicon carbide (SiC) MOSFET marked a major turning point for the power semiconductor market, representing its first significant development in decades. [...]

Byline: Akanksha Gaur Achieves industry-leading power density by incorporating 4th Generation SiC MOSFETs into a compact package. The electrification of vehicles is progressing rapidly towards a decarbonized society, driving the [...]

Byline: Kajal Mehra ROHM has developed four models as part of the TRCDRIVE pack series with 2-in-1 SiC molded modules (two of 750V-rated: BSTxxxD08P4A1x4, two of 1,200V-rated: BSTxxxD12P4A1x1) optimized for [...]

Navitas Semiconductor announces their new portfolio of Gen-3 'Fast' 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such [...]

STMicroelectronics (STM) and Geely Auto (GELYF) announced they have signed a long-term Silicon Carbide, or SiC, supply agreement to accelerate their existing cooperation on SiC devices. Under the terms of [...]

Byline: Dani Cole NXP Semiconductors N.V. has announced its collaboration with ZF Friedrichshafen AG on next-generation SiC-based (silicon carbide) traction inverter solutions for EVs. Recommended Buyer's Guides * Buyer's Guide [...]

STMicroelectronics announced a new high-volume 200mm silicon carbide, or SiC, manufacturing facility for power devices and modules, as well as test and packaging, to be built in Catania, Italy. Combined [...]

Byline: Sapana Pandya Littelfuse, Inc., an industrial technology manufacturing company empowering a sustainable, connected, and safer world, is excited to announce the launch of the IX4352NE Low-side SiC MOSFET and [...]

ROHM and STMicroelectronics announced the expansion of the existing multi-year, long-term 150mm silicon carbide, or SiC, substrate wafers supply agreement with SiCrystal, a ROHM group company. The new multi-year agreement [...]

WORLDWIDE COMPUTER PRODUCTS NEWS-April 22, 2024-ROHM group's SiCrystal and STMicroelectronics expand silicon carbide wafer deal (C)1995-2024 M2 COMMUNICATIONS http://www.m2.co.uk Japanese electronic components manufacturer ROHM (TSE:6963) and Switzerland-based semiconductor technology company [...]

Exane BNP Paribas analyst David O'Connor downgraded On Semiconductor to Underperform from Neutral with a price target of $55, down from $74. The analyst has 'grown more cautious' about end [...]

Exane BNP Paribas analyst David O'Connor downgraded ON Semiconductor (ON) to Underperform from Neutral with a price target of $55, down from $74. The analyst has 'grown more cautious' about [...]

The move towards 800V and above in electric vehicles is already well underway, spearheaded by numerous automotive OEMs such as GM, Hyundai, VW, and Lucid Motors. These platforms enhance efficiency [...]

Byline: Akanksha Sondhi Gaur This will revolutionise various power semiconductor applications, including electric vehicle charging and renewable energy, by enabling higher energy efficiency and contributing to global decarbonisation efforts. Infineon [...]

Byline: TimesTech Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon [...]