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1. Reduced pressure chemical vapor deposition of Si/Si(sub 1-y)C(sub y) heterostructures for n-type metal-oxide-semiconductor transistors

Author

Hartmann, J.M., Lafond, D., Ernst, T., Holliger, P., Loup,V., Laugier, F., Ducroquet, F., Semeria, M.N., Rolland, G., and Deleonibus, S.

Subjects
Transistors -- Research, Silicon -- Research, Silicon -- Electric properties, Chemical vapor deposition -- Research, Chemical vapor deposition -- Usage, Physics
Abstract

The deposition of Si/Si(sub 1-y)C(sub y) heterostructures for n-type metal-oxide-semiconductor (nMOS) transistors, at a pressure of 20 Torr and a temperature of 600 degree C, using RP-chemical vapor deposition (CVD), is detailed. Split C-V mobility measurements in the nMOS transistors have shown that the addition of C leads to a degradation of the electron mobility at room temperature in agreement with previous hall measurements on thick n-type doped Si1-yCy layers grown by MBE.

Published
2002

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