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This paper deals with the problem of the front end bending arising in plate rolling. The problem, which is caused by unbalanced rolling, is investigated by the finite element simulation technique. Discussions are made on the effect of various unbalanced rolling conditions on the deformation of the front end. In particular, an empirical model is developed for the prediction of the curvature of the front end rolled under the presence of the roll speed difference.

A study was conducted on the axially symmetric TM011 mode in a dielectric-loaded cavity. The TM011 mode dielectric-loaded cavity was then introduced for microwave surface resistance measurements in high temperature superconducting thin films using a dielectric resonator. The TM011 mode dielectric-loaded cavity was found to be very sensitive to surface resistance.

Investigating the spatial distribution of superconducting critical temperature, T(sub c)(x, y) from an epitaxial YBCO film in two different situations is discussed. The results show that the local superconducting transition occurs within 1 K suggesting that any samples with superconducting transition width larger than 1 K have local nonuniformity.

It has been established that lanthium-substituted bismuth titanate thin films offer a promising alternative for ferroelectric random access memory applications to lead zirconate titanate and strontium bismuth tantalate films. The bulk polarization value of these films is the largest among those of lanthium-substituted bismuth materials. Furthermore, these films have a Curie point, which marks the transition between ferroelectric phase and paraelectric phase, of around 400 degrees C.

Polarization-dependent X-ray absorption spectroscopy studies were conducted on epitaxially grown Bi(sub (4-x))La(sub x)Ti(sub 3)O(sub 12) thin films to find the La substitution site. Results show a clear distinction between the absorption spectra taken with parallel and perpendicular polarizations, which indicate that some La atoms replace the Bi atoms in the layer and not at the perovskite site.

Ferroelectric (FE) thin films have potential applications in ferroelectric random access memories. The exposure of FE films to various stresses in the fabrication process, results in asymmetric electrical properties which may be detrimental. It has been demonstrated that as-grown samples in Pt/Bi(sub4)Ti(s8b3)O(sub12)(BTO)/Pt capacitors show strong imprint behaviours. The asymmetric electrical properties of Pt/BTO/Pt structures have been studied and x-ray photoemission spectroscopy shows that electrical anomalies originate from space charges to to stoichiometric changes.