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1. Studies of high-speed metal-semiconductor-metal photodetector with a GaAs/AlGaAs/GaAs heterostructure

Author

Surridge, R., Lu, Jian, Pakulski, G., van Driel, H., and Xu, J.M.

Subjects
Photodetectors -- Innovations, Semiconductor-metal boundaries -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A fabricated GaAS/AlGaAs/GaAs heterostructure metal-semiconducor-metal photodetector (HMSM) is evaluated with respect to the conventional MSM in terms of response speed and sensitivity. Such devices have a rise and fall times of 30 ps and 23 ps, respectively, for an active region of 100 by 100 sq m. This is due to the lowersaturation capacitance, RC constant, carrier transit time and saturation velocity of the HMSM device.

Published
1993

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