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1. Transport critical current density in Fe-sheathed nano-SiC doped MgB2 wires

Author

Dou, Shi X., Horvat, Joseph, Soltanian, Saeid, Wang, Xiao L., Qin, Meng J., Zhou, Shi H., Liu, Hua K., and Munroe, Paul G.

Subjects
Semiconductor doping -- Methods, Electric currents -- Observations, Wire -- Properties, Business, Electronics, Electronics and electrical industries
Abstract

Discussing the study on the transport current and its field dependence for the nanometer-size SiC doped MgB2 wires. The results reveal that the nanometer size SiC doped MgB2/Fe wires can carry higher transport I(sub c) and J(sub c) in the magnetic fields ever reported for any form of MgB2.

Published
2003

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