Author: "Kawanaka, Shigeru" / Database: Gale General OneFile - Searchworks@Jio Institute Digital Library Search Results

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Author: Shino, Tomoaki, Yoshitomi, Sadayuki, Nii, Hideaki, Kawanaka, Shigeru, Inoh, Kazumi, Yamada, Takashi, Fuse, Tsuneaki, Katsumata, Yasuhiro, Yoshimi, Makoto, Watanabe, Shigeyoshi, and Matsunaga, Jun-Ichi
Subjects: Bipolar transistors -- Analysis, Silicon-on-isolator -- Analysis, Technology application, Business, Electronics, Electronics and electrical industries
Abstract: High-frequency characteristics of silicon-on-insulator (SOI) lateral bipolar junction transistor (BJTs) designed for radio frequency applications are measured and compared for various link-base length, emitter width, and collector structure. The peak cutoff frequency is increased from 10 GHz to 15 GHz by suppressing external base-induced effects.
Published: 2002

Author: Nii, Hideaki, Yamada, Takashi, Inoh, Kazumi, Shino, Tomoaki, Kawanaka, Shigeru, Yoshimi, Makoto, and Katsumata, Yasuhiro
Subjects: Silicon-on-isolator -- Research, Business, Electronics, Electronics and electrical industries
Abstract: A novel lateral bipolar transistor on thin film silicon-on-insulator is proposed.
Published: 2000

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