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Heteroepitaxial growth behavior of Mn-doped thin films on Al2O3 by pulsed laser deposition is investigated particularly as a function of Mn content (0.00 less than or equal to x less than or equal to 0.35) using synchrotron x-ray scattering and atomic force microscopy. The superior epitaxial growth of the film with an optimum Mn content was attributed to the formation of much larger grains in it.

Heteroepitaxial growth behavior of SrRuO(sub 3)/SrTiO(sub 3)(001) a thin film during early stages by pulsed laser deposition was investigated using synchrotron x-ray scattering, atomic force microscopy, and high resolution transmission electron microscopy. The 3D islands are coherently strained to the substrate, possessing a very narrow mosaic distribution of 0.007degrees half width at half maximum.

A report is presented of the ion-beam-induced graphitization of ultrathin amorphous carbon films at ambient temperature.

The investigation of the effects of strain energy on the required orientation of TiN thin films shows that the overall energy of the film depends on the surface energy, as its strain energy is very small. The TiN film is usually deposited by plasma-enhanced chemical vapor deposition with a power of 50 watts. However, in rf sputter deposited TiN films, the strain energy caused by the large strain controls the overall energy of the film. The study reveals that the strain energy increases with thickness.

Synchrotron x-ray scattering, field emission scanning electron microscope, and vibrating sample magnetometer are used for examining the inhibition of abnormal acicular grain growth of the Ba-ferrite phase in the crystallization of Ba-ferrite films. The Ba-ferrite phase first nucleated at a higher temperature of 750 degree C in comparison to the alpha-Fe2O3 phase, which nucleated at 700 degree Celsius?

The stretched exponent, that is a constant in the classical stretched exponential decay, intrinsically changes with time for luminescence decays were found. The time dependence of the stretched exponent was attributed to the lifetime dispersion of localized excitons.