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1. Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces

Author

Melitz, Wilhelm, Jian Shen, Sangyeob Lee, Joon Sung Lee, Kummel, Andrew C., Droopad, Ravi, and Yu, Edward T.

Subjects
Gallium arsenide -- Electric properties, Indium -- Electric properties, Scanning tunneling microscopy -- Usage, Physics
Abstract

A combination of the scanning tunnelling spectroscopy and Kelvin prove force microscopy techniques is employed to explain the electronic structures of different InAs and InGaAs clean surfaces. The differences observed in the Fermi energy levels of these structures are also analyzed.

Published
2010

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