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1. Growth, structure, and mechanical properties of hydrogenated amorphous carbon nitride films deposited by C[H.sub.3]CN dielectric barrier discharges

Author

Jinhai Niu, Dongping Liu, Haibo Cai, Yang Liu, and Suolin Cui

Subjects
Carbon compounds -- Structure, Carbon compounds -- Electric properties, Carbon compounds -- Mechanical properties, Hydrogenation -- Analysis, Dielectrics -- Analysis, Physics
Abstract

Hydrogenated amorphous carbon nitride (a-C:N:H) films are prepared with C[H.sub.3]CN dielectric barrier discharges (DBD) plasmas and the effects of varying the C[H.sub.3]CN pressure (p) and the frequency of the power supply (f) on the films growth and film properties are analyzed. The studies have shown that p and f have influenced the structures, compositions, deposition rates, surface roughness and nanohardness of deposited a-C:N:H films.

Published
2010

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