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8 results on '"De Gendt S"'

1. Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface

Author

Z. Li; Schram, T., Pantisano, L., Conard, T., Van Elshocht, S., Deweerd, W., De Gendt, S., De Mayer, K., Stesmans, A., Sahmuilia, S., Afanas'Ev, V.. V., Akheyar, A., Brunco, D. P., Yamada, N., and Lehnen, P.

Subjects
Ruthenium -- Electric properties, Dielectric films -- Electric properties, Thin films -- Electric properties, Oxides -- Electric properties, Time-of-flight mass spectrometry -- Usage, Physics
Abstract

The article analyses the flatband voltage shift of ruthenium (Ru) gated metal-oxide-semiconductor stacks and its effects on the formation of thin Ru oxide layer at the dielectric interface after a thermal treatment with oxygen. It reveals that an increase in the voltage shifts for Ru gated stacks is the result of the formation of the thin Ru-oxide layer, which is found to be thermodynamically very much similar to the bulk Ru[O.sub.2].

Published
2007

2. Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening

Author

Urbanowicz, A.M., Vanstreels, K., Verdonck, P., Shamiryan, D., De Gendt, S., and Baklanov, M.R.

Subjects
Chemical vapor deposition -- Usage, Elasticity -- Measurement, Silicon compounds -- Structure, Silicon compounds -- Electric properties, Silicon compounds -- Mechanical properties, Metals -- Hardenability, Metals -- Usage, Physics
Abstract

SiOCH glasses with improved mechanical properties and ultralow dielectric constant are obtained by controlled decomposition of the porogen molecules used to create nanoscale pores, prior to the UV-hardening step. The increased Young's modulus (YM) is related to an enhanced molecular-bridging mechanism when film is hardened without porogen that is described based on percolation of rigidity theory and random network concepts.

Published
2010

3. On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks

Author

Chang, M.H., Zhao, C.Z., Ji, Z., Zhang, J.F., Groeseneken, G., Pantisano, L., De Gendt, S., and Heyns, M.M.

Subjects
Dielectrics -- Evaluation, Gates (Electronics) -- Evaluation, Hafnium -- Electric properties, Physics
Abstract

The activation of process-induced positive charging (PIPC) precursors after device fabrication is examined and it is shown that the loss of certain species from the gate edge through lateral diffusion is responsible for it. That studies have shown that water- and chlorine-related species have played a major role, the reactivation of the passivation precursor is examined and the results have shown that it is not thermally accelerated.

Published
2009

4. Thermally stable high effective work function TaCN thin films for metal gate electrode applications

Author

Adelmann, C., Meersschaut, J., Ragnarsson, L.-A., Conard, T., Franquet, A., Sengoku, N., Okuno, Y., Favia, P., Bender, H., Zhao, C., OESullivan, B.J., Rothschild, A., Schram, T., Kittl, J.A., Van Elshocht, S., De Gendt, S., Lehnen, P., Boissiere, O., and Lohe, C.

Subjects
Chemical vapor deposition -- Usage, Hafnium -- Electric properties, Hafnium -- Mechanical properties, Metal oxide semiconductors -- Evaluation, Silicon -- Electric properties, Silicon -- Mechanical properties, Tantalum -- Electric properties, Tantalum -- Mechanical properties, Physics
Abstract

TaCN layers are deposited by using metal-organic chemical-vapor deposition for applications as metal gate electrodes in p-type metal-oxide-semiconductor (pMOS) devices. The effective work function of the TaCN films is 4.8 eV on HfSi[O.sub.4] and HfSiON and is shifted weakly by high thermal budget annealing toward the Si valence band, reaching 4.9 eV on HfSi[O.sub.4].

Published
2009

5. Process-induced positive charges in Hf-based gate stacks

Author

C.Z. Zhao, J.F. Zhang, M.H. Chang, Peaker, A.R., Hall, S., Groeseneken, G., Pantisano, L., De Gendt, S., and Heyns, M.

Subjects
Gate arrays -- Analysis, Nitriding -- Research, Semiconductors -- Composition, Semiconductors -- Electric properties, Field programmable gate array, Physics
Abstract

Process-induced positive charging (PIPC) in Hf-based gate stacks is examined. PIPC is enhanced by nitridation, although it can be seen in some Hf-based gate stacks without nitridation.

Published
2008

6. Determination of capture cross sections for as-grown electron traps in Hf[O.sub.2]/HfSiO stacks

Author

Zhao, C. Z., Zhang, J. F., Zahid, M. B., Govoreanu, B., Groeseneken, G., and De Gendt, S.

Subjects
Breakdown (Electricity) -- Analysis, Hafnium -- Structure, Hafnium -- Electric properties, Hafnium -- Chemical properties, Silicon compounds -- Structure, Silicon compounds -- Electric properties, Silicon compounds -- Chemical properties, Vapor-plating -- Analysis, Physics
Abstract

Numerical simulation is used to determine the trapping-induced transient gate current in HF[O.sub.2], which unlike SiON, traps large volume of as-grown electrons, leading to unstable threshold voltage and dielectric breakdown. The results prove that trapping can reduce the gate current considerably in a very small fraction of a second and also reveal the presence of two distinctive capture cross sections, which are insensitive to fabrication and processing techniques.

Published
2006

7. Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy

Author

Rittersma, Z.M., Hooker, J.C., Vellianitis, G., Locquet, J.-P., Marchiori, C., Sousa, M., Fompreyrine, J., Pantisano, L., Schram T., Rosmeulen, M., De Gendt, S., and Dimoulas, A.

Subjects
Field-effect transistors -- Electric properties, Field-effect transistors -- Research, Molecular beams -- Research, Epitaxy -- Research, Physics
Abstract

The electrical properties of La2Hf2O7 (LHO) and HfO2 (HO) high-k dielectric layers deposited by molecular-beam epitaxy are reported. The (SiO2) equivalent oxide thickness (EOT), the electrical oxide thickness in inversion t(sub ox) (super inv) and the gate leakage current density (J(sub g)) were determined on large area metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field-effect transistors.

Published
2006

8. Cost-effective cleaning and high-quality thin gate oxides

Author

Heyns, M.M., Bearda, T., Cornelissen, I., De Gendt, S., Degraeve, R., Groeseneken, G., Kenens, C., Knotter, D.M., Loewenstein, L.M., Mertens, P.W., Mertens, S., Meuris, M., Nigam, T., Schaekers, M., Teerlinck, I., Vandervost, W., Vos, R., and Wolke, K.

Subjects
Oxides -- Maintenance and repair, Semiconductor wafers -- Maintenance and repair
Published
1999

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