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1. High and balanced hole and electron mobilities from ambipolar thin-film transistors based on nitrogen-containing oligoacences

Author

Yi-Yang Liu, Cheng-Li Song, Wei-Jing Zeng, Kai-Ge Zhou, Zi-Fa Shi, Chong-Bo Ma, Feng Yang, Hao-Li Zhang, and Xiong Gong

Subjects
Olefins -- Structure, Olefins -- Chemical properties, Field-effect transistors -- Design and construction, Holes (Electron deficiencies) -- Analysis, Nitrogen -- Atomic properties, Nitrogen -- Chemical properties, Chemistry
Abstract

A strategy is described for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C-H moieties by nitrogen atoms in oligoacenes. The demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes has provided new opportunities for designing high-performance ambipolar organic semiconductors.

Published
2010

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