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An epitaxial ternary phase on GaSb(111) and (001) are formed by the interaction of a nickel thin film with a GaSb substrate. This ternary phase is not in equilibrium with GaSb and the mixture of grains of Ni2Ga3 and Ni2Ga0.25Sb1.75 are obtained by an increased interaction of the substrates. Ni-Ga-Sb phase diagram is determined experimentally to explain interfacial reaction of Ni contacts on GaSb. Three equivalent systems Ni/GaAs, Ni/AlAs and Ni/GaSb are compared.

ErSb(001) single crystal layers are grown on GaSb(001) substrates and investigated by the reflection high-energy electron diffraction method. The diffraction patterns exhibit a 4 by 4 surface reconstruction. Low room temperature resistivity is exhibited by the ErSb crystal layers grown on the GaSb substrates.

Molecular beam epitaxy is used to develop single YbSb2 crystal films on GaSb. YbSb2 films have a resistivity of 40 microomega and show metallic characteristics. Orientation of the Sb dangling bonds on the surface of GaSb affects the direction of the YbSb2 films. The influence of the lattice mismatches in the direction of growth and in the basal plane.