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Raman scattering measurements on low temperature GaAs layers were presented. The transition from diluted As in the GaAs matrix to the small As clusters formed after annealing was examined. Transmission electron microscopy enabled the quantitative measurement of the strain and confinement effect of c-As clusters of low temperature GaAs. This suggested the possibility of using the nondestructive optical probe at room temperature to quickly determine the mean cluster diameter, which was shown to be a significant parameter for the electrical and optical properties of low temperature III-V materials.

Raman scattering by coupled phonon-intersubband plasmon excitation in Si delta-doped GaAs is investigated. The symmetry of the coupled models is determined according to the selection rules and their signature by using the difference Raman scattering. The results, calculated theoretically in the frame of the dielectric response theory, are in agreement with those obtained from the experimental spectra. The results provide the proof for electron localization in the nearly regions of the doped sheet and enable the estimation of the electron gas's spatial extent.

The in-plane photovoltage (IPV) and photoluminescence (PL) in sequentially grown Ga(sub 0.8)In(sub 0.22)As/GaAs and Ga(sub 0.8)In(sub 0.2)N(sub 0.015)As(sub 0.985)/GaAs quantum wells is investigated. It was found that temperature, excitation intensity, spectral and time dependent study of the IPV are shown to give valuable information about the nonradiative centers and hence about the optical quality of the GaInNAs QW.