1. Diameter of As clusters in LT-GaAs by Raman spectroscopy
- Author
-
Toufella, M., Puech, P., Carles, R., Bedel, E., Fontaine, C., Claverie, A., and Benassayag, G.
- Subjects
Gallium arsenide -- Research ,Thin films -- Research ,Raman spectroscopy -- Usage ,Physics - Abstract
Raman scattering measurements on low temperature GaAs layers were presented. The transition from diluted As in the GaAs matrix to the small As clusters formed after annealing was examined. Transmission electron microscopy enabled the quantitative measurement of the strain and confinement effect of c-As clusters of low temperature GaAs. This suggested the possibility of using the nondestructive optical probe at room temperature to quickly determine the mean cluster diameter, which was shown to be a significant parameter for the electrical and optical properties of low temperature III-V materials.
- Published
- 1999