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1. External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes

Author

Montes, M., Hierro, A., Ulloaa, J.M., Guzman, A., Al Khalfioui, M., Hugues, M., Damilano, B., and Massies, J.

Subjects
Electroluminescence -- Analysis, Gallium arsenide -- Electric properties, Gallium arsenide -- Optical properties, Indium -- Electric properties, Indium -- Optical properties, Light-emitting diodes -- Research, Quantum electrodynamics -- Analysis, Physics
Abstract

The electroluminescence (EL) characteristics of a set of InAs/GaInNAs quantum dot (QD) light-emitting diodes with varying In and N contents are studied. The studies have shown that the EL thermal quenching has an activation energy that is attributed to carrier escape from the QD to the capping layer.

Published
2010

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