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1. Mechanisms leading to erratic snapback behavior in bipolar junction transistors with base emitter shorted

Author

Chatterjee, Amitabh, Schrimpf, Ronald D., Pendharkar, Sameer, and Banerjee, Kaustav

Subjects
Breakdown (Electricity) -- Analysis, Bipolar transistors -- Observations, Physics
Abstract

Two different modes of breakdown is discussed in the reverse-biased I-V characteristics observed generically in bipolar junction transistors (BJTs) with the base emitter shorted, showing an erratic behavior, in the presence of large displacement currents. Experimental observations related to reverse-biased collector junctions of BJTs, that exhibit two different states of breakdown when a fast voltage ramp is applied, are presented.

Published
2005

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