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A new technique for thermal dissolution ink-transfer printing (TDIP) is proposed. The method, which has undergone experimental tests, involves heating of the ink as it strikes the solvent-saturated acceptor paper. The heating facilitates ink dissolution and diffusion onto the paper. It is thus possible to control the amount of ink dissolved via regulation of the thermal energy on the head. The proposed TDIP uses i J/cm2 energy per color.

Research into the fabrication of complementary metal oxide semiconductors of less than 0.1 micronm is presented. The paper demonstrates the use of key processes such as lateral local super-steep channel doing using heavy ion implantation.

Research into the fabrication of a three dimensional complementary metal oxide semiconductor circuit is presented. The paper describes the use of metal-induced lateral crystallization, to build a high performance 3-D circuit.

Research into the construction of bidirectional tunneling program/erase NOR-type memory is presented. The paper describes the use of Fowler-Nordheim tunneling, providing excellent results for low power, high reliability applications.

A response to a published paper on the operation of a microwave amplifier is presented. The paper contains a nonlinear-Schrodinger-equation model that has inspired furtherwork on using such models to characterize amplifiers. However, it also includestwelve misleading expressions. Proof is given of their inaccuracy along with corrections for several equations. Inquiries concerning the paper's claims of experimental validation are also brought up.

Areview of the paper 'Approximate analytical solution of generalized diode equation' by T.A. Fjeldy, B. Moon and M. Shur is presented. The paper demonstrated a means of improving the solution of the generalized diode equation via computerized device simulation. The review proposes a cubic step and two Newton measures to replace the Newton-Raphson iteration which was foundto be unsuitable for the job. The authors defend their theory through a separate brief.

A binary-logic circuit application of the design concepts developed for neuron metal oxide semiconductor field effect transistors (MOSFET) in an earlier paper is investigated in light of two approaches for simplifying circuit configurations. The first entails the removal of the input-stage digital-to-analog converter while the second involves the design of symmetric functions. Experimental data to confirm their validity are also discussed.

A study of the noise properties of Wz-phase and Znb-phase GaN IMPATT devices is presented. The paper suggests that GaN based devices generate a greater level of noise than GaAs based devices.

An exact expression of the threshold voltage, for all channel lengths and drain biases is discovered in the analytical solution of Poisson's equation in the metal oxide semiconductor field effect transistor's (MOSFET's) depletion layer. The solution uses the same procedure as in the recent paper 'Threshold Voltage Model for Deep-Submicrometer MOSFET's.' The analytical solution is not as complicated as that given in the paper.

The base transit time of the trapezoidal Ge base profile for the SiGe bipolar transistor is investigated. The analytical formulas derived in J.D. Cressler et al.'s paper result in a significant error as the trapezoid profile is close to uniform Ge profile. Accurate analytical formulas are derived. Comparisons between the current analytical predictions and past published results are shown.

Claims of a more precise solution for the saturation current fitting a nonuniformly doped semiconductor region, in a recent paper, are not really new, as is shown in previous publications. Thus, the methodology and use of the word 'new' is criticized. Usefulness of a mathematical transformation given in the appendix is praised. This allows a seven factor reduction of the saturation current's computation time.

The validity of bipolar transistor models using the partitioned-charge (PC) approach for transient simulations presented in a previous paper is questioned. An alternative model assumes that the PC approach does not need electron injections across the collector-base junction due to a particular PC component which serves as modulating factor for the instantaneous dc collector current.

A response to a paper on a novel method for measuring the recombination velocity in polycrystalline semiconductors is presented. It attempts to correct the errors contained in an asymptotic evaluation of the beam-induced-current characterizations of grain boundaries insolar cells after which the theory is applied to arbitrary interface recombination velocity. A reply from the author is also included.

The results of a previous paper on inverse-narrow-width effects and small-geometry metal oxide semiconductor field-effect transistors in terms of threshold voltage is verified and found inaccurate. A two-dimensional Poisson equation is solved using the model. The alternative model shows that the potential at surface is not equal to psiSM although it is at the minimum y = dw, increasing to 76 V from 42 V at least.

The results of a previous paper on flicker noise in n-channel metal oxide semiconductor field-effect transistors are questioned. As an alternative model, the effect of individual traps to assess the total noise in a macroscopic device is assumed to require the ensemble average over the traps. Also, it is established that the sign and magnitude of the total cross-correlation noise power spectrum is influenced by the relative contribution of the types of traps.

A response to a paper evaluating the merits of gallium arsenide (GaAs) technology against silicon (Si) technology in terms of speed is presented. It is alleged that the conclusion concerning silicon devices's superiority over gallium arsenide structures contradicts the supporting data wherein a GaAs metal semiconductor field effect transistor (FET) has a transconductance double that of an Si metal oxide semiconductor FET. The utilization of the transconductance to quantify the speed is also queried. A reply by the authors is presented.

Revisions to the formula for secondary emission presented in a previous paper are suggested in relation to higher voltage applications. The revisions include the separation of the ksv and ksdelta smoothness factors for V and delta, assigned a 1.0 default value. This applies to typical dull srufaces in conventional working tube environments. Lower values are best for roughened surfaces while higher values are suited to smooth and oxide-free surfaces.