Xu, Qiuxia, Qian, He, Yin, Huaxiang, Jia, Lin, Ji, Honghao, ChenBaoqing, Zhu, Yajiang, Liu, Min, Han, Zhensheng, and Hu, Huanzhang
Subjects
Cobalt -- Usage, Complementary metal oxide semiconductors -- Research, Germanium -- Usage, Heavy ions -- Research, High technology industry -- Research, Research and development, Business, Electronics, Electronics and electrical industries
Abstract
Research into the fabrication of complementary metal oxide semiconductors of less than 0.1 micronm is presented. The paper demonstrates the use of key processes such as lateral local super-steep channel doing using heavy ion implantation.
Chan, Victor W.C., Chan, Philip C.H., and Chan, Mansun
Subjects
Complementary metal oxide semiconductors -- Research, Crystallization -- Usage, Integrated circuits -- Research, Silicon-on-isolator -- Research, Thin-film circuits -- Research, High technology industry -- Research, Semiconductor industry -- Research, Research and development, Technology development, Integrated circuit design, Business, Electronics, Electronics and electrical industries
Abstract
Research into the fabrication of a three dimensional complementary metal oxide semiconductor circuit is presented. The paper describes the use of metal-induced lateral crystallization, to build a high performance 3-D circuit.
Gallium arsenide semiconductors -- Research, Gallium compounds -- Research, Ionization -- Research, Noise -- Research, Zinc compounds -- Research, High technology industry -- Research, Research and development, Business, Electronics, Electronics and electrical industries
Abstract
A study of the noise properties of Wz-phase and Znb-phase GaN IMPATT devices is presented. The paper suggests that GaN based devices generate a greater level of noise than GaAs based devices.
Published
2001
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