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2. The investigation of key technologies for sub-0.1-micronm CMOS device fabrication

Author

Xu, Qiuxia, Qian, He, Yin, Huaxiang, Jia, Lin, Ji, Honghao, ChenBaoqing, Zhu, Yajiang, Liu, Min, Han, Zhensheng, and Hu, Huanzhang

Subjects
Cobalt -- Usage, Complementary metal oxide semiconductors -- Research, Germanium -- Usage, Heavy ions -- Research, High technology industry -- Research, Research and development, Business, Electronics, Electronics and electrical industries
Abstract

Research into the fabrication of complementary metal oxide semiconductors of less than 0.1 micronm is presented. The paper demonstrates the use of key processes such as lateral local super-steep channel doing using heavy ion implantation.

Published
2001

3. Three-dimensional CMOS SOI integrated circuit using high-temperature metal-induced lateral crystallization

Author

Chan, Victor W.C., Chan, Philip C.H., and Chan, Mansun

Subjects
Complementary metal oxide semiconductors -- Research, Crystallization -- Usage, Integrated circuits -- Research, Silicon-on-isolator -- Research, Thin-film circuits -- Research, High technology industry -- Research, Semiconductor industry -- Research, Research and development, Technology development, Integrated circuit design, Business, Electronics, Electronics and electrical industries
Abstract

Research into the fabrication of a three dimensional complementary metal oxide semiconductor circuit is presented. The paper describes the use of metal-induced lateral crystallization, to build a high performance 3-D circuit.

Published
2001

4. Comprehensive study on a novel bidirectional tunneling program/erase NOR-type (BiNOR) 3-D flash memory cell

Author

Chou, Amy Hsiu Chou, Yang, Evans Ching-Song, Liu, Cheng-Jye, Pong, Hsiu-Hsiang, Liaw, Ming-Chi, Chao, Ten-Sen, King, Ya-Chin, Hwang, Huey-Liang, and Hsu, Charles Ching-Hsiang

Subjects
Electrically erasable programmable read-only memory -- Research, Flash memory -- Research, Tunneling (Physics) -- Research, Semiconductor industry -- Research, Technology development, Flash memory, Business, Electronics, Electronics and electrical industries
Abstract

Research into the construction of bidirectional tunneling program/erase NOR-type memory is presented. The paper describes the use of Fowler-Nordheim tunneling, providing excellent results for low power, high reliability applications.

Published
2001

5. Noise characteristics of GaN-based IMPATTs

Author

Panda, A.K., Pavlidis, D., and Alekseev, E.A.

Subjects
Gallium arsenide semiconductors -- Research, Gallium compounds -- Research, Ionization -- Research, Noise -- Research, Zinc compounds -- Research, High technology industry -- Research, Research and development, Business, Electronics, Electronics and electrical industries
Abstract

A study of the noise properties of Wz-phase and Znb-phase GaN IMPATT devices is presented. The paper suggests that GaN based devices generate a greater level of noise than GaAs based devices.

Published
2001