Search

Light propagation in Photonic integrated circuits (PICs), which can nowadays involve complex systems of light-guiding structures, is measured with different approaches(Nuzhdin et al., 2020, Lončar et al., 2002, Hopman et al., 2007, Morichetti et al., 2014, Sapienza et al., 2012, Vesseur et al., 2007). An interferometric polarization-sensitive measurement of the evanescent fields of these structures provides insight in the performance of the circuit detects possible malfunction with sub-wavelength precision(Engelen et al., 2007, Gersen et al., 2005, Barwick et al., 2009). We demonstrate a Near-field scanning optical microscopy (NSOM) measurement on coupled ring resonators that shows how the guided modes evolve as they propagate across the optical chip. Analysis of the measurements provides information about intensity distribution of the two polarization components (TE and TM) and their spatial confinement. The data validates our methodology and opens new possibilities for analysis of signal propagation in prototyping and optimization of integrated optical systems. Direct observation of polarization state of the guided modes allows for clear understanding of mode conversion in coupling systems.

Highly evanescent waveguides with a subwavelength core thickness present a promising lab-on-chip solution for generating nanovolume trapping sites using overlapping evanescent fields. In this work, we experimentally studied Si3N4 waveguides whose sub-wavelength cross-sections and high aspect ratios support fundamental and higher order modes at a single excitation wavelength. Due to differing modal effective indices, these co-propagating modes interfere and generate beating patterns with significant evanescent field intensity. Using near-field scanning optical microscopy (NSOM), we map the structure of these beating modes in three dimensions. Our results demonstrate the potential of NSOM to optimize waveguide design for complex field trapping devices. By reducing the in-plane width, the population of competing modes decreases, resulting in a simplified spectrum of beating modes, such that waveguides with a width of 650 nm support three modes with two observed beats. Our results demonstrate the potential of NSOM to optimize waveguide design for complex field trapping devices.

In this paper, we demonstrate simultaneous AFM/NSOM using a dual-tip normal tuning-fork based scanning probe microscope. By scanning two SPM probes simultaneously, one dedicated for AFM with a standard tip diameter of 20 nm, and the second having a 150 nm aperture NSOM fiber with 200 nm thick gold coating, we combine the benefits of ∼20 nm spatial resolution from the AFM tip with the spectral information of a near-field optical probe. The combination of simultaneous dual-tip scanning enables us to decouple the requirements for high resolution topography and probe functionality. Our method represents a marked shift from previous applications of multi-probe SPM where essentially a pump-probe methodology is implemented in which one tip scans the area around the second. As a model system, we apply dual-tip AFM/NSOM scanning to a sample of spin-cast nano-clustered Lumogen dyes, which show remarkable brightness and photochemical stability. We observe morphology features with a resolution of 20 nm, and a near-field optical resolution of 150 nm, validating our approach.

The size of the V-defects in the GaN/InGaN-based quantum wells blue light-emitting diode (LED) was intentionally modified from 50 nm to 300 nm. High resolution photoluminescence and electroluminescence of a single large V-defect were investigated by near-field scanning optical microscopy. The current distribution along the {10-11} facets of the large defect was measured by conductive atomic force microscopy. Nearly 20 times the current injection and dominant emission from bottom quantum wells were found in the V-defect compared to its vicinity. Such enhanced current injection into the bottom part of quantum wells through V-defect results in higher light output power. Reduced external quantum efficiency droops were achieved due to more uniform carrier distribution. The un-encapsulated fabricated chip shows light output power of 172.5 mW and 201.7 mW at 400 mA, and external quantum efficiency drop of 22.3% and 15.4% for the sample without and with large V-defects, respectively. Modified V-defects provide a simple and effective approach to suppress the efficiency droop problem that occurs at high current injection, while improving overall quantum efficiency.