Search

A system consisting of a magnetic material and a piezoelectric material placed within a microwave cavity is considered. The strong and long-range coupling between the piezoelectric material and the magnetic material mediated by the microwave cavity has been studied. We have shown that the realization of the strong coupling regime is not only possible between each of these materials with the microwave cavity, but also between the magnetic material and the piezoelectric material.

Abstract Herein, the design and characterization of Ag/SeO2/C avalanche type resonant tunneling devices are reported. Thin pellets of SeO2 nano-powders pressed under hydraulic pressure of 1.0 MPa which is used as the active material are characterized. They showed tetragonal structure refereeing to space group of P 4 2 m b c and lattice parameters of a = b = 7.866 Å and c =5.336 Å. The current-voltage characteristic curves have shown that SeO2 can perform as active media to produce resonant tunneling diodes when forward biased and as avalanche type diode when reverse biased. The peak to valley current ratios of these diodes reached 18.3. In addition, the impedance spectroscopy measurements have shown that the device works in the low impedance mode when operated in the microwave range of frequency near 1.50 GHz. Negative conductance effect is observed in that frequency domain. The features of the Ag/SeO2/C nominate them for use as signal amplifiers and microwave oscillators.

Herein, the structural, morphological, optical and electrical properties of CdO stacked layers comprising Si slabs of thickness of 100 nm are investigated. The performance of the stacked layers, which are prepared by the thermal evaporation technique under vacuum pressure of 10-5 mbar, is remarkably enhanced via insertion of Si thin slabs. The presence of Si slabs between the layers of CdO improves the crystallinity and surface morphology, increases the light absorbability in the ultraviolet and visible ranges of light and also increases the dielectric constant, the quality factor, and optical conductivity values. The optical conductivity parameters, which are analyzed in accordance with Drude-Lorentz approach, have shown that the insertion of the Si layers rises the values of the drift mobility of holes in CdO and lowers the free holes concentration. The energy band gap of CdO films is narrowed from 2.20 to 1.27 eV upon insertion of Si slabs. The applicability of the plasmonic CdO/Si/CdO devices as low pass filers in the frequency domain of 0.01-1.80 GHz is verified through impedance spectroscopy measurements.

A simple and feasible scheme for the generation and manipulation of phonon lasering is proposed and investigated based on a generic three-mode cavity magnomechanical system, in which a magnon mode couples simultaneously with a microwave cavity mode and a phonon mode. In sharp contrast to all previous phonon lasering schemes with only a single drive, the input pump field for the system in the proposed scheme is split into two microwave driving fields to drive the microwave cavity mode and the magnon mode, respectively. The impact of changing relative phase and relative amplitude ratio of the two microwave drives on mechanical gain, stimulated emitted phonon number, threshold power, and phonon emission line shape are theoretically and numerically investigated. The results indicate that the phonon laser action can be effectively controlled simply by adjusting the relative phase and relative amplitude ratio, so additional and tunable degrees of freedom are introduced to control the phonon laser. Considering the experimental feasibility of the generic cavity magnomechanical system and the two-drive approach, the present scheme provides a potentially practical route for the development of tunable phonon lasering devices with low-threshold, high-gain, and narrow-linewidth properties based on the platform of cavity magnomechanics.

Hybrid quantum systems have attracted much attention due to the fact that they combine the advantages of different physical subsystems. Cavity QED (cavity quantum electrodynamics) with magnons is a hybrid quantum systems that combines a YIG (Yttrium Iron Garnet) sphere and a 3D (three-dimensional) rectangular microwave cavity. Based on this hybrid photon-magnon system, we obtain an approximate analytic solution by the RWA (rotating wave approximation) with an ingenious transformation. After skillfully diagonalizing the Hamiltonian, we show that the Kerr-nonlinearity interactions could yield a negativity value of the Wigner function, periodic quadrature squeezing effects, antibunching property, and field nonclassicality in the magnon. Our work may stimulate the study of nonclassicality of photon-magnon coupling systems and its potential applications in quantum information processing.

Abstract Herein, metal-oxide-semiconductor fields effect transistors (MOSFET) are fabricated and characterized. p − type germanium dioxide coated onto Au/ n-CdSe substrates and top contacted with carbon point contacts is used to form the MOSFET devices. The structural investigations which were carried out with the help of X-ray diffraction technique revealed large lattice mismatched polycrystalline layers of CdSe and GeO2. The design of the energy band diagram has shown the formation of two Schottky arms (Au/ n − CdSe, C/GeO2) at the interfaces of the n − CdSe/ p − GeO2 layers. The capacitance-voltage characteristics which are recorded in the frequency domain of 1.0-50.0 MHz revealed the ability of formation of NMOS and PMOS layers. The signal frequency controlled built in potential is tunable in the range of 2.34 and 5.18 eV. In addition, the conductance and capacitance spectral analyses in the frequency domain of 10-1800 MHz revealed the domination of current conduction by tunneling and correlated barriers hoping below and above 760 MHz, respectively. In addition to its features as MOSFET devices, the Au/CdSe/GeO2/C hybrid devices are found to be appropriate for use as microwave cavities.

Here, we research a novel cavity magnomechanical system, where the magnon mode with Kerr nonlinearity driven by a microwave field couples to a phonon mode with a magneostrictive nonlinear interaction (radiation pressure-like). Based on these nonlinear properties, we numerically demonstrate magnon chaos in the PT-symmetry and PT-symmetry broken regimes in the system. In the PT-symmetry broken phase, the magnon-chaos driving threshold is lowered to a rather low levels benefited from the enhancement of the system nonlinearities. Moreover, by expenediently manipulating the phase transition between PT-symmetry and PT-symmetry broken regimes, we can switch the system between into and out of chaotic regimes. Our work may broaden the cavity magnomehcnaics and provide a promising application for magnetic chaos-related security communications.

An experimental method and apparatus for investigating the interaction mechanism between microwave field and semiconductor material are presented in this paper. The investigation is based on a dual-mode compressed rectangular cavity, which includes the TE102 and TE103 modes. The TE102 mode is used for providing the stimulus signal, which supplies the microwave field during the experiment, and the TE103 mode is for testing. The two modes are individually coupled to the cavity, and two band-stop filters are introduced to isolate the signals coming from both the modes. A directional coupler is utilized to monitor the power level of the stimulus signal. Experimental results demonstrate that microwave field may affect the inherent characteristics of indium phosphate, a typical kind of semiconductor materials, which eventually leads to the nonlinear behavior of the dielectric property. After the microwave field strength exceeds a critical value, the nonlinear behavior of the microwave materials becomes more and more drastic along with further increasing field strength, and according to the particular experiment setup, we conclude that the nonlinear behavior is not caused by microwave thermal effect, but some inherent characteristics of the material itself. In addition, the experimental method and apparatus can also be employed to predict the consequences of the non-thermal action of microwave effect of other high-power microwave material under microwave field.

In this paper, a novel technique to achieve precise temperatures in food sterilization has been proposed. An accurate temperature profile is needed in order to reach a commitment between the total removal of pathogens inside the product and the preservation of nutritional and organoleptic characteristics. The minimal variation of the target temperature in the sample by means of a monitoring and control software platform, allowing temperature stabilization over 100 °C, is the main goal of this work. A cylindrical microwave oven, under pressure conditions and continuous control of the microwave supply power as function of the final temperature inside the sample, has been designed and developed with conditions of single-mode resonance. The uniform heating in the product is achieved by means of sample movement and the self-regulated power control using the measured temperature. Finally, for testing the sterilization of food with this technology, specific biological validation based on Bacillus cereus as a biosensor of heat inactivation has been incorporated as a distribution along the sample in the experimental process to measure the colony-forming units (CFUs) for different food samples (laboratory medium, soup, or fish-based animal by-products). The obtained results allow the validation of this new technology for food sterilization with precise control of the microwave system to ensure the uniform elimination of pathogens using high temperatures.

In this article, the properties of the Ge/Bi2O3 interfaces as microwave cavities are reported and discussed. The interface is composed of monoclinic Bi2O3 films grown onto polycrystalline cubic Ge substrate. It is observed that consistent with the theoretical design of the energy band diagram, the experimental current-voltage characteristics of the Yb/Ge/Bi2O3/C hybrid device structure exhibits electronic switching property. In addition, the capacitance, resistance and microwave cutoff frequency spectral analysis in the frequency domain of 0.01-1.50 GHz revealed a frequency dependent tunability of the device. Moreover, while the Yb/Bi2O3/C interface displays negative capacitance effect, the Yb/Ge/Bi2O3/C interfaces are also found to have the ability of altering the resistance up to three orders of magnitude. Such property allowed reaching a cut off frequency up to 116 GHz. The electronic features of the device indicated that the Ge/Bi2O3 interfaces are attractive for production of negative capacitance field effect transistors and band pass/reject filters.