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Core chlorophytes possess glycerol-3-phosphate dehydrogenases (GPDs) with an unusual bidomain structure, consisting of a glycerol-3-phosphate phosphatase (GPP) domain fused to canonical GPD domains. These plastid-localized enzymes have been implicated in stress responses, being required for the synthesis of glycerol under high salinity and triacylglycerols under nutrient deprivation. However, their regulation under varying environmental conditions is poorly understood. C. reinhardtii transgenic strains expressing constitutively bidomain GPD2 did not accumulate glycerol or triacylglycerols in the absence of any environmental stress. Although the glycerol contents of both wild type and transgenic strains increased significantly upon exposure to high salinity, cycloheximide, an inhibitor of cytoplasmic protein synthesis, abolished this response in the wild type. In contrast, GPD2 transgenic strains were still capable of glycerol accumulation when cultured in medium containing cycloheximide and NaCl. Thus, the pre-existing GPD2 protein appears to become activated for glycerol synthesis upon salt stress. Interestingly, staurosporine, a non-specific inhibitor of protein kinases, prevented this post-translational GPD2 protein activation. Structural modeling analyses suggested that substantial conformational rearrangements, possibly triggered by high salinity, may characterize an active GPD2 GPP domain. Understanding this mechanism(s) may provide insights into the rapid acclimation responses of microalgae to osmotic/salinity stress.

We present research on the role of multiple quantum well periods in extended short-wavelength infrared InGaAs/InAsPSb type-I LEDs. The fabricated LEDs consisted of 6, 15, and 30 quantum well periods, and we evaluated the structural properties and device performance through a combination of theoretical simulations and experimental characterization. The strain and energy band offset was precisely controlled by carefully adjusting the composition of the InAsPSb quaternary material, achieving high valence and conduction band offsets of 350 meV and 94 meV, respectively. Our LEDs demonstrated a high degree of relaxation of 94–96 %. Additionally, we discovered that the temperature-dependent dark current characterization attributed to generation-recombination and trap-assign tunneling, with trap-assign tunneling being more dominant at lower current injections. Electroluminescence analysis revealed that the predominant emission mechanism of the LEDs originated from localized exciton and free exciton radiative recombination, which the 30 quantum wells LED exhibited the highest contribution of the localized exciton/free exciton radiative recombination. We observed that increasing the quantum well periods from 6 to 15 led to an increase in the 300 K electroluminescence intensity of the LED. However, extending the quantum well period to 30 resulted in a decline in emission intensity due to the degradation of the epitaxial film quality.

A mid-wavelength p–B–i–n infrared photodetector constituting ternary alloys of an InAs0.9Sb0.1 absorber and an AlAs0.05Sb0.95 electron barrier was demonstrated to operate at room temperature. The results of high-resolution x-ray diffraction (XRD) analysis indicate the high crystalline quality of the barriode detector structure, grown via molecular beam epitaxy, as supported by the strong XRD peak intensity of InAsSb and its corresponding defect density as low as ∼2.0 × 108 cm−2. The dark current of the barriode detector remained diffusion-limited in the 280–300 K temperature range, and generation–recombination became dominant at 220–260 K owing to the deep-level traps in the depletion region of the absorber and near the lattice-mismatched heterointerface of AlAsSb/InAsSb. Two distinct shallow traps in the InAsSb absorber were identified through Laplace deep-level transient spectroscopy with the activation energies of Et1 = 20 meV and Et2 = 46 meV. The Et1 trap is associated with the hole localization states induced by the alloy disorder of InAsSb, whereas the Et2 trap originated from a point defect of In vacancies in InAsSb. At 300 K, the barriode detector exhibited a 90% cutoff wavelength of 5.0 μm, a peak current responsivity of 0.02 A/W, and a dark current density of 1.9 × 10−3 A/cm2 under a bias voltage of −0.3 V, providing a high specific detectivity of 8.2 × 108 cm Hz1/2/W.

Activation of ESCRT prevents potentially lethal outcomes of minor perturbations in lysosomal integrity. Here authors show that Ca2 + -activated scrambling of sphingomyelin and its cytosolic turnover drives lysosomal repair independently of ESCRT.

Sphingomyelin is a dominant sphingolipid in mammalian cells. Its production in the trans-Golgi traps cholesterol synthesized in the ER to promote formation of a sphingomyelin/sterol gradient along the secretory pathway. This gradient marks a fundamental transition in physical membrane properties that help specify organelle identify and function. We previously identified mutations in sphingomyelin synthase SMS2 that cause osteoporosis and skeletal dysplasia. Here, we show that SMS2 variants linked to the most severe bone phenotypes retain full enzymatic activity but fail to leave the ER owing to a defective autonomous ER export signal. Cells harboring pathogenic SMS2 variants accumulate sphingomyelin in the ER and display a disrupted transbilayer sphingomyelin asymmetry. These aberrant sphingomyelin distributions also occur in patient-derived fibroblasts and are accompanied by imbalances in cholesterol organization, glycerophospholipid profiles, and lipid order in the secretory pathway. We postulate that pathogenic SMS2 variants undermine the capacity of osteogenic cells to uphold nonrandom lipid distributions that are critical for their bone forming activity.

Two taxonomically similar Drosophila species, Drosophila melanogaster and Drosophila suzukii, are known to have distinct habitats: D. melanogaster is mostly found near overripe and fermented fruits, whereas D. suzukii is attracted to fresh fruits. Since chemical concentrations are typically higher in overripe and fermented fruits than in fresh fruits, D. melanogaster is hypothesized to be attracted to higher concentrations of volatiles than D. suzukii. Therefore, the chemical preferences of the two flies were compared via Y-tube olfactometer assays and electroantennogram (EAG) experiments using various concentrations of 2-phenylethanol, ethanol, and acetic acid. D. melanogaster exhibited a higher preference for high concentrations of all the chemicals than that of D. suzukii. In particular, since acetic acid is mostly produced at the late stage of fruit fermentation, the EAG signal distance to acetic acid between the two flies was higher than those to 2-phenylethanol and ethanol. This supports the hypothesis that D. melanogaster prefers fermented fruits compared to D. suzukii. When comparing virgin and mated female D. melanogaster, mated females showed a higher preference for high concentrations of chemicals than that of virgin females. In conclusion, high concentrations of volatiles are important attraction factors for mated females seeking appropriate sites for oviposition.

We investigated the conduction- and valence-confined energy levels and first band-to-band transition energies of a type-II InAs/GaSb multi-quantum-well at 77 K and room temperature for various well and barrier thicknesses. We calculated the electron and hole confined energies based on Kane’s eight-band k.p formalism. We also explored the effect of the barrier width on the wells’ interactions, which was negligible for wells with a width wider than 30 nm. Moreover, we proposed a single exponential function to predict the first transition energies without considering the complex approach of k.p theory. Then, we measured the photoluminescence spectra of the manufactured samples, including thin wells (1, 2, and 3 monolayers) and wide barriers (50 nm). Finally, we made comparisons between the theoretical band-to-band transition energies for kz=0 and experimental results from the photoluminescence spectra for different well thicknesses at 77 and 300 K.

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n junction electric fields (Fpn) was perturbed by the external DC bias voltage and CW light intensity for EBPR and OBPR experiments, respectively. Moreover, the Fpn was evaluated using the Fast Fourier Transform (FFT) of the Franz—Keldysh oscillation from PR spectra. In the EBPR, the electric field decreased by increasing the DC bias voltage, which also decreased the potential barrier. In OBPR, when incident CW light is absorbed by the top cell, the decrement of the Fpn in the GaAs cell indicates that the photogenerated carriers are accumulated near the p-n junction. Photogenerated carriers in InGaP can pass through the tunnel junction, and the PR results show the contribution of the modification of the electric field by the photogenerated carriers in each cell. We suggest that PR spectroscopy with optical-bias and electrical-bias could be analyzed using the information of the photogenerated carrier passed through the tunnel junction.

The algorithmic spectrometry as an alternative to traditional approaches has the potential to become the next generation of infrared (IR) spectral sensing technology, which is free of physical optical filters, and only a very small number of data are required from the IR detector. A key requirement is that the detector spectral responses must be engineered to create an optimal basis that efficiently synthesizes spectral information. Light manipulation through metal perforated with a two-dimensional square array of subwavelength holes provides remarkable opportunities to harness the detector response in a way that is incorporated into the detector. Instead of previous experimental efforts mainly focusing on the change over the resonance wavelength by tuning the geometrical parameters of the plasmonic layer, we experimentally and numerically demonstrate the capability for the control over the shape of bias-tunable response spectra using a fixed plasmonic structure as well as the detector sensitivity improvement, which is enabled by the anisotropic dielectric constants of the quantum dots-in-a-well (DWELL) absorber and the presence of electric field along the growth direction. Our work will pave the way for the development of an intelligent IR detector, which is capable of direct viewing of spectral information without utilizing any intervening the spectral filters.

Infrared (IR) polarimetric imaging has attracted attention as a promising technology in many fields. Generally, superpixels consisting of linear polarizer elements at different angles plus IR imaging array are used to obtain the polarized target signature by using the detected polarization-sensitive intensities. However, the spatial arrangement of superpixels across the imaging array may lead to an incorrect polarimetric signature of a target, due to the range of angles from which the incident radiation can be collected by the detector. In this article, we demonstrate the effect of the incident angle on the polarization performance of an alternative structure where a dielectric layer is inserted between the nanoimprinted subwavelength grating layers. The well-designed spacer creates the Fabry–Perot cavity resonance, and thereby, the intensity of transverse-magnetic I-polarized light transmitted through two metal grating layers is increased as compared with a single-layer metal grating, whereas transverse-electric (TE)-transmitted light intensity is decreased. TM-transmittance and polarization extinction ratio (PER) of normally incident light of wavelength 4.5 μm are obtained with 0.49 and 132, respectively, as the performance of the stacked subwavelength gratings. The relative change of the PERs for nanoimprint-lithographically fabricated double-layer grating samples that are less than 6% at an angle of incidence up to 25°, as compared to the normal incidence. Our work can pave the way for practical and efficient polarization-sensitive elements, which are useful for many IR polarimetric imaging applications.