Search

We present narrow-band polarization-sensitive reflectance of GaN/AlGaN heterostructures in the mid-infrared range. Experimental measurements performed at 15° angle of incidence show the excitation of a Berreman mode at the interface between GaN and sapphire substrate. A transfer matrix method for anisotropic layers has been used to analyze the obtained results. The contribution of the two-dimensional electron gas at the interfaces of the heterostructures has been included by proper modelization of an effective thin layer.