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Considering the magnetic shielding requirements of both geomagnetic field and 50 Hz power-line frequency in the complex working conditions of the power grid, an electromagnetic shielding system combining active and passive modes is proposed in this article. A three-dimensional Helmholtz coil with a magnetic shielding barrel nested inside is established by the COMSOL simulation tool, and the magnetic shielding efficiency of the system is analyzed. Comparing different materials, the simulation results indicate that permalloy alloy exhibits better shielding performance than pure iron and nickel materials. Additionally, the overall shielding efficiency of the shielding barrel increases linearly with the number of multiple layers. Under the combined active and passive electromagnetic shielding conditions, the system achieves a shielding efficiency of SE = 113.98 dB, demonstrating excellent performance in shielding both AC and DC interference magnetic fields. This study provides theoretical guidance for the construction of magnetic shielding systems in electromagnetic interference environment.

A co-sputtering process for the deposition of Fe0.8Ga0.2B alloy magnetostrictive thin films is studied in this paper. The soft magnetic performance of Fe0.8Ga0.2B thin films is modulated by the direct-current (DC) sputtering power of an FeGa target and the radio-frequency (RF) sputtering power of a B target. Characterization results show that the prepared Fe0.8Ga0.2B films are amorphous with uniform thickness and low coercivity. With increasing FeGa DC sputtering power, coercivity raises, resulting from the enhancement of magnetism and grain growth. On the other hand, when the RF sputtering power of the B target increases, the coercivity decreases first and then increases because of the conversion of the films from a crystalline to an amorphous state. The lowest coercivity of 7.51 Oe is finally obtained with the sputtering power of 20 W for the FeGa target and 60 W for the B target. Potentially, this optimization provides a simple way for improving the magnetoelectric coefficient of magnetoelectric composite materials and the sensitivity of magnetoelectric sensors.

At present, flexible pressure-sensitive materials generally have problems with weak adhesion and poor wear resistance, which easily result in friction failure when used for plantar pressure detection. In this study, a flexible pressure sensor with the advantages of a wide detection range, fast recovery, and good abrasive resistance was designed and prepared based on the screen printing process. The pressure-sensitive unit with a structural size of 5 mm× 8 mm was a functional material system due to the use of graphene and epoxy resin. The influence of the different mass ratios of the graphene and epoxy resin on the sensing properties was also studied. The test results showed that when the mass ratio of graphene to epoxy resin was 1:4, the response time and recovery time of the sensing unit were 40.8 ms and 3.7 ms, respectively, and the pressure detection range was 2.5–500 kPa. The sensor can detect dynamic pressure at 0.5 Hz, 1 Hz, 2 Hz, 10 Hz, and 20 Hz and can withstand 11,000 cycles of bending. In addition, adhesion tests showed that the high viscosity of the epoxy helped to improve the interlayer bond between the pressure-sensitive materials and the flexible substrate, which makes it more suitable for plantar pressure detection environments, where friction is common.

Here, we present a high-precision demodulation method that supports the arrayed waveguide grating (AWG) system, which includes a 1 × 8 AWG as the primary filter with a 0.5 nm channel spacing and a 1 × 4 AWG as the auxiliary filter with a 1 nm channel spacing. The high precision is achieved through an innovative method of decoupling three channels, involving two adjacent channels of the primary filter and one channel of the secondary auxiliary filter. Simulation results show that the AWGs have a good transmission spectrum with crosstalk below −24.8 dB, non-uniformities below 0.8 dB, insertion loss below −3.7 dB, 3 dB bandwidth of 0.25 nm, and 10 dB bandwidth of 0.43 nm. The interrogation precision can reach 8 pm, with a dynamic range of 0.4 nm, corresponding to a single FBG.

Magnetometers based on nitrogen-vacancy (NV) centers in diamonds have promising applications in fields of living systems biology, condensed matter physics, and industry. This paper proposes a portable and flexible all-fiber NV center vector magnetometer by using fibers to substitute all conventional spatial optical elements, realizing laser excitation and fluorescence collection of micro-diamond with multi-mode fibers simultaneously and efficiently. An optical model is established to investigate multi-mode fiber interrogation of micro-diamond to estimate the optical performance of NV center system. A new analysis method is proposed to extract the magnitude and direction of the magnetic field, combining the morphology of the micro-diamond, thus realizing μm-scale vector magnetic field detection at the tip of the fiber probe. Experimental testing shows our fabricated magnetometer has a sensitivity of 0.73 nT/Hz1/2, demonstrating its feasibility and performance in comparison with conventional confocal NV center magnetometers. This research presents a robust and compact magnetic endoscopy and remote-magnetic measurement approach, which will substantially promote the practical application of magnetometers based on NV centers.

GaN high-electron-mobility transistor (HEMT) terahertz (THz) detectors have been widely studied and applied in the past few decades. However, there are few reports about the influence of GaN/AlGaN heterostructure material properties on the detection model at present. In this paper, a response voltage model for a GaN HEMT THz detector that considers the carrier scattering in a GaN/AlGaN heterostructure is proposed. The phonon scattering, dislocation scattering, and interface roughness scattering mechanisms are taken into account in the classic THz response voltage model; furthermore, the influence of various material parameters on the response voltage is studied. In a low-temperature region, acoustic scattering plays an important role, and the response voltage drops with an increase in temperature. In a high temperature range, optical phonon scattering is the main scattering mechanism, and the detector operates in a non-resonant detection mode. With an increase in carrier surface density, the response voltage decreases and then increases due to piezoelectric scattering and optical phonon scattering. For dislocation and interface roughness scattering, the response voltage is inversely proportional to the dislocation density and root mean square roughness (RMS) but is positively related to lateral correlation length. Finally, a comparison between our model and the reported models shows that our proposed model is more accurate.

A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10−7 Ω·cm2 at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics.

A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improved. The maximum responsivity of 10 kV/W and minimum noise equivalent power (NEP) of 15.5 pW/Hz0.5 are obtained at the radiation frequency of 315 GHz. The results are comparable to and even more promising than the reported single-channel (SC) GaN HEMT detectors. The enhancement of THz response and the reduction of NEP of the DC GaN HEMT detector mainly results from the interaction of 2DEG in the upper and lower channels, which improves the self-mixing effect of the detector. The promising experimental results mean that the proposed DC GaN/AlGaN HEMT THz detector is capable of the practical applications of THz detection.