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We report the fabrication and characterization of a plasmonic metasurface comprising electrically-contacted sub-wavelength gold dipole nanoantennas, conformally coated by a thin hafnia film, an indium tin oxide layer and a backside mirror, forming metal–oxide–semiconductor (MOS) capacitors, for use as an electrically-tunable reflectarray or metasurface. By voltage biasing the nanoantennas through metallic connectors and leveraging the carrier refraction effect in the MOS capacitors, our measurements demonstrate phase control in reflection over a range of about 30°, with a constant magnitude of reflection coefficient of 0.5, and the absence of secondary lobes. Comprehensive electromagnetic and quantum carrier models of the structure are developed and are in excellent agreement with the measurements. The metasurface holds promise for use as an optical phased array.

We report recent progress on optoelectronic devices and metasurfaces involving surface plasmons, enabled by metal-oxide-semiconductor (MOS) structures on Si and on epsilon-near-zero materials. We discuss electrically tuneable metasurfaces, high-speed electro-absorption modulators, and reflection modulators. Hot carriers created by the absorption of plasmons in metallic nanostructures on MOS structures are also discussed as they lead to novel device physics that open the door to new device concepts.

We fabricate plasmonic heptamer-arranged nanohole (HNH) arrays by helium (He) focused ion beam (HeFIB) milling, which is a resist-free, maskless, direct-write method. The small He+ beam spot size and high milling resolution achieved by the gas field-ionization source used in our HeFIB allows the milling of high aspect ratio (4:1) nanoscale features in metal, such as HNHs incorporating 15 nm walls of high verticality between holes in a 55-nm-thick gold film. Drifts encountered during the HeFIB milling of large arrays, due to sample stage vibrations or He beam instability, were compensated by a drift correction technique based on in situ He ion imaging of alignment features. Our drift correction technique yielded 20 nm maximum dislocation of HNHs, with 6.9 and 4.6 nm average dislocations along the horizontal and vertical directions, respectively. The measured optical resonance spectra of the fabricated plasmonic HNH arrays are presented to support the fabrication technique. Defects associated with HeFIB milling are also discussed.

In this paper we discuss the optical response of laser-written plasmonic colours on silver coated via the atomic layer deposition of alumina. These colours are due to nanoparticles distributed on a flat surface and on a surface with periodic topographical features (i.e. ripples). The colours are observed to shift with increasing alumina film thickness. The colours produced by surfaces with ripples recover their original vibrancy and hue after the deposition of film of thickness ~60 nm, while colours arising from flat surfaces gradually fade and never recover. Analysis of the surfaces identifies periodic topographical features to be responsible for this behaviour. Finite-difference time-domain simulations unravel the role played by the alumina thickness in colour formation and confirm the rotations and recovery of colours for increasing alumina thickness. The coloured surfaces were evaluated for applications in colourimetric and radiometric sensing showing large sensitivities of up to 3.06/nm and 3.19 nm/nm, respectively. The colourimetric and radiometric sensitivities are observed to be colour dependent.

Exploiting surface plasmon polaritons to enhance interactions between graphene and light has recently attracted much interest. In particular, nonlinear optical processes in graphene can be dramatically enhanced and controlled by plasmonic nanostructures. This work demonstrates Raman scattering enhancement in graphene based on plasmonic resonant enhancement of the Stokes emission, and compares this mechanism with the conventional Raman enhancement by resonant pump absorption. Arrays of optical nanoantennas with different resonant frequency are utilized to independently identify the effects of each mechanism on Raman scattering in graphene via the measured enhancement factor and its spectral linewidth. We demonstrate that, while both mechanisms offer large enhancement factors (scattering cross-section gains of 160 and 20 for individual nanoantennas, respectively), they affect the graphene Raman spectrum quite differently. Our results provide a benchmark to assess and quantify the role and merit of each mechanism in surface-plasmon-mediated Raman scattering in graphene, and may be employed for design and realization of a variety of graphene optoelectronic devices involving nonlinear optical processes.