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In this study, we present theoretical X-ray absorption near-edge structure (XANES) spectra at the K-edge of oxygen in zirconia containing Ni dopant atoms and O vacancies at varying concentrations. Specifically, our model system consist of a supercell composed of a zirconia (ZrO2) matrix containing two nickel dopants (2Ni), which substitute two Zr atoms at a finite separation. We found the 2Ni atoms to be most stable in a ferromagnetic configuration in the absence of oxygen vacancies. In this system, each Ni atom is surrounded by two shells of O with tetrahedral geometry, in a similar way as in bulk cubic zirconia. The oxygen K-edge XANES spectrum of this configuration shows a pre-edge peak, which is attributable to dipole transitions from O 1s to O 2p states that are hybridized with unoccupied Ni 3d states. The intensity of this pre-edge peak, however, reduces upon the introduction of a single vacancy in the 2Ni-doped zirconia matrix. The corresponding ground state remains ferromagnetic, while one of the nickel atoms adopts a trigonal bipyramidal geometry, and the other one remains in a tetrahedral geometry. Furthermore, the introduction of two vacancies in the 2Ni-doped zirconia results in the two Ni atoms having distorted octahedral and trigonal bipyramidal geometries and being coupled antiferromagnetically in the ground state. Additionally, the oxygen K-edge XANES spectrum shows a further decrease in the intensity of the pre-edge peak, compared to the case of a single vacancy. Thus, the changes in the intensity of the pre-edge peak evidence a major structural change in the local environment around nickel atoms and, by extension, in the zirconia matrix. This change is due to the structural disorder induced by the 2Ni dopants and the O vacancies. Furthermore, the analysis of the XANES signatures shows that the oxidation state of nickel atoms changes with the introduction of oxygen vacancies. Our study therefore shows a possibility to control the oxidation state and magnetic order in a typical diluted magnetic oxide. Such a finding may be crucial for spintronics-related applications.

We have computed from first principles the structural, magnetic and optical properties of zig-zag oriented silicene nanoribbons. The minimal width for structurally stable planar structure having zig-zag edges corresponds to a 4-chains ribbon. Its ground state presents reconstructed and spin polarized edges, coupled antiferromagnetically. For this state, and for the corresponding excited state with ferromagnetically coupled edges, we computed the optical absorption spectra within the independent particle approximation, including local field effect corrections, for light polarized in the directions parallel and perpendicular to the ribbon axis. For the “parallel” light polarization the inclusion of local fields effects is limited to a slight reduction of the intensity of the main peak in the infrared region, as well as that of some minor peaks in the visible-ultraviolet structure. Conversely, the computed optical spectrum for light polarized perpendicularly to the ribbon axis shows that the short-width zig-zag nanoribbons are basically transparent in the infrared and visible region, because of the effect of electronic confinement combined with local fields. Keywords: Silicene, Optoelectronic properties, First principles simulations, 2D materials, Optical spectra, Nanoribbons.

By means of plane wave pseudopotential method we have studied the electronic properties of the heterostructure formed by an high dielectric constant (k) oxide, the hexagonal La2O3 epitaxially grown with (0001)-orientation on Si (111) substrate. We found that for La2O3 both the dielectric constant along the growth direction and the band gap are larger in the epitaxial film than in the bulk. By super-cell techniques we have computed the band alignment of the junction finding a valence band offset and a conduction band offset of ~1.6 eV and ~1.7 eV respectively. We demonstrate that the band alignment can be engineered by δ-doping the interface: our simulations show that, by doping the interface with S or Se monolayer, the valence (conduction) band offset increases (decreases) of about 0.5 eV without the formation of spurious electronic states in the semiconductor band-gap. The simulation of the critical thickness of pseudomorphic Lanthana film complete the work. Our results are relevant for the realization of a new generation of devices based on ultra-scaled complementary metal oxides semiconductors (CMOS) technology.