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6. Inkjet printed metallizations for Cu(In1− x Ga x )Se2 photovoltaic cells.

Author

Hersh, Peter A., Curtis, Calvin J., van Hest, Maikel F.A.M., Kreuder, John J., Pasquarelli, Robert, Miedaner, Alex, and Ginley, David S.

Abstract

ABSTRACT This study reports the inkjet printing of Ag front contacts on Aluminum doped Zinc Oxide (AZO)/intrinsic Zinc Oxide (i-ZnO)/CdS/Cu(In1− xGa x)Se2 (CIGS)/Mo thin film photovoltaic cells. The printed Ag contacts are being developed to replace the currently employed evaporated Ni/Al bi-layer contacts. Inkjet deposition conditions were optimized to reduce line resistivity and reduce contact resistance to the Al:ZnO layer. Ag lines printed at a substrate temperature of 200°C showed a line resistivity of 2.06 µΩ · cm and a contact resistance to Al:ZnO of 8.2 ± 0.2 mΩ · cm2 compared to 6.93 ± 0.3 mΩ · cm2 for thermally evaporated contacts. These deposition conditions were used to deposit front contacts onto high quality CIGS thin film photovoltaic cells. The heating required to print the Ag contacts caused the performance to degrade compared to similar devices with evaporated Ni/Al contacts that were not heated. Devices with inkjet printed contacts showed 11.4% conversion efficiency compared to 14.8% with evaporated contacts. Strategies to minimize heating, which is detrimental for efficiency, during inkjet printing are proposed. Copyright © 2011 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Published
2011
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7. Non-contact printed aluminum metallization of Si photovoltaic devices.

Author

Platt, Heather A.S., Li, Yunjun, Novak, James P., and van Hest, Maikel F.A.M.

Abstract

Alternative solution-based techniques such as aerosol jet printing offer the dual benefits of contactless pattern deposition and high material utilization. We have used aerosol jet printing to investigate non-contact printed Al metal ink as a replacement for screen printed Al back contacts on wafer Si solar cells. This particle-based ink can be prepared at high loadings of 60 weight % metal, which enables rapid deposition of 1 – 10 µm thick lines. Al lines printed on Si wafers and heated between 550 and 800 °C form low resistance contacts suitable for current extraction. The effectiveness of these printed Al back contacts has further been demonstrated by incorporating them into a series of 21 cm2 crystalline Si solar cells that produced a champion power conversion efficiency of 13%. [ABSTRACT FROM PUBLISHER]

Published
2012
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