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Ridge microstructures were prepared by etching through samples consisting of a series of stacked InAs x P 1 − x quantum wells (QWs) with step graded composition grown on InP by molecular beam epitaxy. Different etching techniques were used: wet etching with HCl/H 2 O and reactive ion etching with CH 4 /H 2. These microstructures were characterized by low-temperature micro-photoluminescence. The photoluminescence (PL) emission associated with each QW was clearly identified. The PL was measured in detail across etched ridge stripes of various widths. Variations of the integrated PL intensities across the etched stripes were observed. The PL intensities for all QWs increase gradually from the edge to the center of the ridge microstructures. The PL intensity measured at the ridge center is systematically reduced for ridges which are 10 or 20 μ m wide as compared to ridges which are 30 μ m wide or larger. On the other hand, the spectral peak position of the PL lines remained constant with high accuracy (0.2–0.4 meV) across the microstructures. These observations are discussed in terms of the different possible mechanisms which determine the PL intensity variations, namely, non-radiative recombination at the etched walls and effects of stray electric fields which result from the etching process. Based on this discussion, we compare quantitatively the different etching processes which we have used. Altogether, this study illustrates the contribution that specially designed test structures, coupled with advanced spectroscopic characterization, can provide to the development of semiconductor photonic devices (e.g., lasers or waveguides) involving etching processes. [ABSTRACT FROM AUTHOR]

This document is a summary of a special issue in the Journal of Applied Physics on semiconductor physics. The special issue focuses on the research of new semiconductor materials, structures, and devices, as well as the development of characterization methods based on plasma, thermal, elastic, acoustic, and related effects. The articles cover various topics such as photothermal methods, theoretical and experimental models, modern materials like thin films and heterostructures, and imaging techniques. The research presented in this special issue has applications in microelectronics, optoelectronics, solar cells, medical instrumentation, and quantum computing. [Extracted from the article]

PN junctions play important roles in semiconductor devices. Flexoelectricity, an electromechanical coupling between strain gradient and electric polarization, has non-negligible contributions in nano-devices. The thermoflexoelectric effect is a phenomenon in which temperature gradients generate inhomogeneous strains and further induce flexoelectric polarizations. Therefore, temperature gradients can affect carrier transport in PN junctions through the thermoflexoelectric effect. In this paper, a one-dimensional model of the PN junction under a uniform temperature change is established. Exact solutions for the electromechanical fields in the PN junction are obtained for the first time. The effects of the temperature gradient, doping level, and flexoelectric coefficient on the electromechanical behaviors of the PN junction are numerically analyzed. The results indicate that carrier concentrations in the p and n regions are sensitive to temperature gradients because of the screening effect of the mobile charge on the flexoelectric polarization induced by the temperature gradient. Meanwhile, the flexoelectric field and the initial built-in electric field in the depletion region jointly determine the magnitude of the potential barrier, and thus, the temperature-gradient-induced flexoelectric field can tune the switching characteristics of the PN junction. This study provides a theoretical basis for the tuning of the electromechanical behavior of the PN junction by thermally induced flexoelectric fields. [ABSTRACT FROM AUTHOR]

Small angle x-ray scattering (SAXS) stands out as a promising solution in semiconductor metrology. The critical issue of SAXS metrology is to solve the SAXS inverse problem. With the increasing complexity of semiconductor devices, traditional strategies will face problems such as long iteration time and multiple solutions. To address these challenges, we develop a physical symmetry enhanced method to speed up the solution of the SAXS inverse problem for complex nanostructures. We incorporate the physical symmetry into a deep learning model, and a combined loss function is proposed to determine the correct structure in each step of training, which can continuously correct errors and make the model converge faster. The results show that the proposed method achieves high accuracy in determining the critical structural parameters of the complex profile gratings. Compared to traditional strategies, our method performs better in accuracy and does not require time-consuming iterations during reconstruction. The physical symmetry enhanced method provides a feasible way for achieving real-time reconstruction of complex profile nanostructures and is expected to promote the development of SAXS metrology. [ABSTRACT FROM AUTHOR]

Understanding the mechanical and thermodynamic properties of transition-metal dichalcogenides (TMDs) and their heterostructures is pivotal for advancing the development of flexible semiconductor devices, and molecular dynamics (MD) simulation is widely applied to study these properties. However, current uncertainties persist regarding the efficacy of empirical potentials in MD simulations to accurately describe the intricate performance of complex interfaces within heterostructures. This study addresses these challenges by developing an interatomic potential based on deep neural networks and first-principles calculations. Specifically focusing on MoS2/WS2 heterostructures, our approach aims to predict Young's modulus and thermal conductivities. The potential's effectiveness is demonstrated through the validation of structural features, mechanical properties, and thermodynamic characteristics, revealing close alignment with values derived from first-principles calculations. A noteworthy finding is the substantial influence of the load direction on Young's modulus of heterostructures. Furthermore, our results highlight that the interfacial thermal conductance of the MoS2/WS2 heterostructures is considerably larger than that of graphene-based interfaces. The potential developed in this work facilitates large-scale material simulations, bridging the gap with first-principles calculations. Notably, it outperforms empirical potentials under interface conditions, establishing its significant competitiveness in simulation computations. Our approach not only contributes to a deeper understanding of TMDs and heterostructures but also presents a robust tool for the simulation of their mechanical and thermal behaviors, paving the way for advancements in flexible semiconductor device manufacturing. [ABSTRACT FROM AUTHOR]

Fast carrier dynamics in organic thin-film transistors (OTFTs) was investigated by time-resolved electrostatic force microscopy (tr-EFM). We found that the carrier diffusion in the OTFTs proceeded in two stages: fast diffusion and slow diffusion. By applying the instantaneous frequency method to EFM, the temporal evolution of the spatial distribution of fast carriers in the channel region of the OTFTs, which took place on the timescale of several hundreds of nanoseconds, was evaluated. The inhomogeneous distribution of the local decay time constant showed that the carrier diffusion of the OTFTs was limited by the grain boundaries between each crystalline region. The quantitative capability of the method was verified by comparing the values of the carrier mobility estimated by the tr-EFM measurement and a numerical simulation. The mobility estimated from the experiment and the simulation showed good agreement, showing the possibility of the tr-EFM to evaluate the time evolution of dynamic phenomena in semiconductor devices. [ABSTRACT FROM AUTHOR]

The performance of SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) degrades seriously after a period of continuous operation. To directly understand this issue, we conduct real-time time-dependent density functional theory (TDDFT) simulations on a series of nitrogen passivated SiC– SiO 2 interfaces to monitor the interaction between carriers and interface atoms. We find that the nitrogen passivation always leaves behind two local states near the VBM, which gives a chance to the strong interaction between channel carriers and C–N bonds, and finally results in the generation of C dangling bond defects. These processes are vividly presented and confirmed by the TDDFT simulation. Additionally, the results show that the new defects are more easily formed by the passivated C cluster than the passivated Si vacancy. These studies provide physical insights into the degradation mechanisms of working SiC MOSFETs, while simultaneously demonstrating the advantage of TDDFT as a crucial tool for investigating defect generation dynamics in semiconductor devices. [ABSTRACT FROM AUTHOR]

This Perspective focuses on experimental and theoretical aspects of positron annihilation spectroscopy. This set of methods is highly suitable for identifying and quantifying vacancy-type defects in semiconductors and also allows for analyzing their physics characteristics. We present selected examples from the past decade, where the methods have been used for obtaining timely and useful insights into the defect-controlled phenomenon in narrow-gap (Ge, GaSb) and wide-gap (III-nitride, oxide) semiconductors. We also discuss possible future developments that may allow more detailed studies in novel semiconductor materials and devices with ever more complex lattice structures. [ABSTRACT FROM AUTHOR]

Vacancies are generated in semiconductor devices while operating in the space radiation environment, impacting semiconductor carrier concentrations and dynamics. Positron annihilation lifetime spectroscopy (PALS) is used to probe these defect concentrations in bulk grown GaN, GaP, InAs, InP, Si, MgO, and ZnO both as-grown and as a function of 2–4 MeV proton irradiation. All samples were irradiated to yield a common initial damage production and characterized identically. In as-grown samples, PALS reveals vacancy concentrations above the saturation limit in the oxides, disabling further analysis. As a function of dose, of the materials in which defect accumulation could be probed, it is observed that GaN is the most resistant to the accumulation of defects (attributed to the Ga vacancies) and Si is the least. GaP (attributed to the Ga vacancy) and InAs exhibit slightly higher rates of vacancy accumulation than GaN. InP exhibits high defect accumulation rates approaching that of Si. This information is key to understanding the operation of a diverse set of semiconductors in the space radiation environment. [ABSTRACT FROM AUTHOR]

We present a setup for fast, low-bias (≤ 1 mV) DC transport measurements with μs time resolution for high ohmic resistance (≈ 20 k Ω) semiconducting samples. We discuss the circuitry and instrumentation for the measurement approach that can be applied to any kind of semiconductor device or (gated) two-dimensional material and demonstrate the main measurement artifacts in typical measurements by means of circuit simulation. Based on the latter, we present a simple two-step protocol for eliminating the measurement artifacts reliably. We demonstrate the technique by measuring the transitions between quantum Hall plateaus in the HgTe quantum wells and resolve plateaus as short-lived as 100 μs. [ABSTRACT FROM AUTHOR]

Charge diffusion from an ion track and its collection by a biased contact in a semiconductor domain is modeled and analyzed within the framework of the so-called diffusion–collection approach. We successively examine the case of charge diffusion from a point source and from a linear distribution, introducing and discussing the concept of collection velocity at the point where the collection current is evaluated. Analytical formulations of the collected charge, collection current, and collection velocity are developed. Implications for the calculation of the soft error rate in complementary metal-oxide-semiconductor circuits exposed to ionizing particles are derived. Finally, our model provides new insights into the correct definition of the charge collection velocity in collection–diffusion models. [ABSTRACT FROM AUTHOR]

GaN is an enabling material for light emitting diodes, advanced radio frequency, and power semiconductor devices. However, fabrication of GaN devices often relies on harsh etch processes, which can leave an etch damage layer, limiting final device performance. In this work, an isotropic atomic layer etching (ALE) process involving SF6 plasma and trimethylaluminium [Al(CH3)3] is presented for the controlled etching of GaN, which reduces oxygen and carbon contamination while smoothing the surface. The ALE chemistry was first examined with density functional theory. A comparison between proposed thermal and plasma-driven reactions is made by implementing Natarajan–Elliott analysis, highlighting that the plasma process is a good candidate for GaN ALE. Saturation was experimentally confirmed for both ALE half-cycles at 150 and 300 °C, with etch rates of 0.31 ± 0.01 and 0.40 ± 0.02 nm/cycle, respectively. Analysis of the films post-ALE shows that the RMS roughness of the films decreases from 2.6 ± 0.1 to 1.9 ± 0.1 nm after 25 nm of etching at 300 °C, in agreement with a previously developed curvature-dependent smoothing model. Taken together, this ALE process enables accurate GaN thickness tuning, surface cleaning, and surface smoothing, allowing for further development of GaN devices. [ABSTRACT FROM AUTHOR]

To elucidate the internal chemical physics of measured CMOS-compatible electrochemical random-access memory (ECRAM) devices, we constructed a 2D semiconductor device simulation, including ions and electrochemical reactions, and used it to fit measured devices. We present the results of a device simulation model that includes Cu+ ions' diffusion and the charge transfer reaction between the WOx conduction band electron and Cu+ (i.e., "Cu plating"). Reproducing the linear response of ECRAM devices, the effect of charging HfOx by the Cu+ ions is sufficient, and WOx is not being doped by the Cu+ ions. While potentiation is supported by the formation of an electron channel, an efficient depression requires the formation of high positive charge density at the channel material. At higher Cu+ flux, Cu+ reaches and penetrates the WOx layer. While this effect enhances the potentiation response, it also initiates the "plating" reactions. Including this reaction is essential to reproducing the data of devices exhibiting sub-linear responses. We suggest that electron trapping by ions (i.e., plating) would constitute a long-term degradation process even for H+ based devices. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) perovskites have gained much attention lately owing to their excellent optoelectronic properties, chemical tunability, and environmental stability. Multiple methods have been devised to synthesize high quality 2D perovskite single crystals, and recent progress in fabricating its heterostructures is notable as well. In particular, with growing interest in 2D van der Waals heterostructures, 2D perovskites have become a strong candidate as a new building block for heterostructures to reveal unique physical properties across different interfaces. Until now, various heterostructure devices of 2D perovskite single crystals with other types of 2D materials such as transition metal dichalcogenides (TMDs) and graphene have been studied, which have shown intriguing results including interlayer excitons and enhanced electronic properties. Here, we introduce various synthetic approaches to realize 2D perovskite single crystals and unique characteristics of their single crystal heterostructures fabricated with precision, possessing sharp interfaces. Moreover, recent studies of semiconductor devices based on 2D perovskite single crystal heterostructures are discussed in-depth. New perspectives to further the horizon in the field of 2D perovskite heterostructures are suggested in this work including the consideration of metal–2D material van der Waals contact, application of dry transfer techniques, electric bias driven ion diffusion studies, and nanocrystal array fabrication. 2D perovskite heterostructure single crystal devices factoring in these novel perspectives will further uncover the true potential of these materials for highly efficient and stable semiconductor devices. [ABSTRACT FROM AUTHOR]

Gallium oxide (Ga2O3) is attracting attention as a next-generation semiconductor material for power device because it has a wide energy band gap and high breakdown electric field. We deposited a Sn polymer, poly-tetraallyl tin, on Ga2O3 samples using a disclosed initiated chemical vapor deposition (iCVD) process. The Sn dopant of the Sn polymer layer is injected into the Ga2O3 through a heat treatment process. Diffusion model of Sn into the Ga2O3 is proposed through secondary ion mass spectroscopy analysis and bond dissociation energy. The fabricated device exhibited typical n-type field-effect transistor (FET) behavior. Ga2O3 Sn-doping technology using iCVD will be applied to 3D structures and trench structures in the future, opening up many possibilities in the Ga2O3-based power semiconductor device manufacturing process. [ABSTRACT FROM AUTHOR]

Femtosecond-laser-fabricated black silicon has been widely used in the fields of solar cells, photodetectors, semiconductor devices, optical coatings, and quantum computing. However, the responsive spectral range limits its application in the near- to mid-infrared wavelengths. To further increase the optical responsivity in longer wavelengths, in this work, silicon (Si) was co-hyperdoped with nitrogen (N) and selenium (Se) through the deposition of Se films on Si followed by femtosecond (fs)-laser irradiation in an atmosphere of NF3. The optical and crystalline properties of the Si:N/Se were found to be influenced by the precursor Se film and laser fluence. The resulting photodetector, a product of this innovative approach, exhibited an impressive responsivity of 24.8 A/W at 840 nm and 19.8 A/W at 1060 nm, surpassing photodetectors made from Si:N, Si:S, and Si:S/Se (the latter two fabricated in SF6). These findings underscore the co-hyperdoping method's potential in significantly improving optoelectronic device performance. [ABSTRACT FROM AUTHOR]

Organic semiconductors are used in organic opto‐electronic devices because of their various advantages. However, they are vulnerable to moisture and oxygen. Thus, flexible and transparent encapsulations with barrier properties against moisture and oxygen need to be developed to fabricate bendable and foldable organic semiconductor devices. In this study, a simple and highly productive self‐assembly process is developed from montmorillonites by using maximized Marangoni forces and a co‐solvent in an aqueous water and a non‐aqueous N‐methyl‐2‐pyrrolidone medium for the fabrication of a flexible and transparent encapsulation film. Water vapor transmission rate (WVTR) and optical transmittance of montmorillonite‐based flexible and transparent encapsulation films are modulated using different precursor solution concentrations and numbers of stacked montmorillonite layers. Long‐term stability of transparent polymer solar cells with self‐assembled flexible and transparent encapsulation films (WVTR of 6.66 × 10−3 g m−2 day−1 and optical transmittance of 90.5% at 550 nm) is enhanced, and performance of flexible polymer light‐emitting diodes with flexible encapsulation films is maintained after 1000 bending cycles, even at a bending radius of 2 mm. Mechanical properties of prepared encapsulation films are analyzed by conducting tensile tests and finite element analysis simulations, demonstrating that an integrated analysis includes both devices and encapsulation films. [ABSTRACT FROM AUTHOR]

Quasi-static transition failures in the main logic of modern semiconductors devices are very challenging to be detected in a standard test production environment, because they need a lot of test time to be activated, and usually this is not compatible with a reasonable test time. Many semiconductor manufacturers usually agree not to test these process marginalities to avoid increasing the total cost of the device so much, but accept a few ppm of returns from the customer. In general we are talking about a few decimals of ppm. The typical cases that we can encounter are retention failures in flip-flops, unexpected set, or reset happening after tens of milliseconds. The aim of this work is to discuss the technique/method to deal with quasi-static transition failures. The paper also proposes one possible strategy to detect and locate them in a failure analysis test environment making a benchmark between the most appropriate fault localization technique. [ABSTRACT FROM AUTHOR]

A fully integrated solution for millimeter-scale delayering of logic and memory semiconductor devices is presented. The innovative technology employs a 0.5 mm wide argon ion beam that scans the sample surface in the X–X direction. The flatness of the delayered area is controlled by an algorithm that uses feedback from multiple analytical detectors to control milling parameter adjustments in real time. The result is the precise removal of thin device layers and a highly planar surface—up to 10 mm in diameter with a uniformity of better than 50 nm. [ABSTRACT FROM AUTHOR]

Novel sensing applications benefit from multifunctional nanomaterials responsive to various external stimuli such as mechanics, electricity, light, humidity, or pollution. While few such materials occur naturally, the careful design of synergized nanomaterials unifies the cross-coupled properties which are weak or absent in single-phase materials. In this study, 2D MoS2 integrated with ultrathin dielectric oxide layers forms hetero-nanostructures with significant impacts on carrier transport. The ternary TiO2/MoS2/ZnO hetero-nanostructures, along with their individual properties, improve the performance of multifunctional sensing devices. The synthesized hetero-nanostructure exhibits a responsivity of up to 16 mA/W to 700 nm light and responds to 5 ppm ammonia gas at room temperature. These enhancements are attributed to interface charge transfer and photogating effects. The ternary TiO2/MoS2/ZnO hetero-nanostructure is compatible with existing semiconductor fabrication technologies, making it feasible to integrate into flexible, lightweight semiconductor devices and circuits. These results may inspire new photodetectors and sensing devices based on two-dimensional (2D) layered materials for IoT applications. [ABSTRACT FROM AUTHOR]

The data‐driven machine learning technology used for neural decoding emphasizes the requirements of in vivo and in vitro neural signal acquisition with high spatial and temporal resolution. However, micro‐electrode arrays (MEAs) that simultaneously achieve high spatial and temporal resolution neural signal acquisition are not yet available. Meanwhile, the high data bandwidth of large‐scale MEA brings challenges in power consumption, data transmission, storage, and neural signal processing. This research aims to improve the spatial and temporal resolution of MEA, reduce the cost and time of large‐scale MEA customization through cascading, and reduce the bandwidth of large‐scale MEA through spike compression. Firstly, based on in‐pixel spike detection, a row‐based neural spike readout mechanism and related array circuit to improve the neural spike readout performance and temporal resolution of neural signal acquisition is proposed. To further enhance the spatial resolution and reduce the risk of large‐scale MEA fabrication, the cascading capability of the readout circuit is explored. Lastly, spatial correlation‐based neural spike encoding is proposed to reduce the data bandwidth, achieving a 5.2× compression rate. This is a study on implementing large‐scale MEA through cascaded readout circuits and novel study to utilize the spatial correlation between detected neural spikes for further compression. [ABSTRACT FROM AUTHOR]

The use of organic semiconductors in electronic devices, including transistors, sensors, and memories, unlocks innovative possibilities such as streamlined fabrication processes, enhanced mechanical flexibility, and potential new applications. Nevertheless, the increasing technical demand for patterning organic semiconductors requires greater integration and functional implementation. This paper overviews recent efforts to pattern organic semiconductors compatible with electronic devices. The review categorizes the contributions of organic semiconductor patterning approaches, such as surface-grafting polymers, capillary force lithography, wettability, evaporation, and diffusion in organic semiconductor-based transistors and sensors, offering a timely perspective on unconventional approaches to enable the patterning of organic semiconductors with a strong focus on the advantages of organic semiconductor utilization. In addition, this review explores the opportunities and challenges of organic semiconductor-based integration, emphasizing the issues related to patterning and interconnection. [ABSTRACT FROM AUTHOR]

A nonradiative recombination channel is proposed, which does not vanish at low temperatures. Defect-mediated nonradiative recombination, known as Shockley–Read–Hall (SRH) recombination, is reformulated to accommodate Coulomb attraction between the charged deep defect and the approaching free carrier. It is demonstrated that this effect may cause a considerable increase in the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that, in a typical semiconductor device or semiconductor medium, the SRH recombination rate at low temperatures is much higher and cannot be neglected. This effect renders invalid the standard procedure of estimating the radiative recombination rate by measuring the light output in cryogenic temperatures, as a significant nonradiative recombination channel is still present. We also show that SRH is more effective in the case of low-doped semiconductors, as effective screening by mobile carrier density could reduce the effect. [ABSTRACT FROM AUTHOR]

With ultra-wide bandgap and outstanding thermal properties, diamond-based high-power devices have excellent application prospects. The crystal structure and electronic property of the metal/hydrogen-terminated diamond (H-diamond) interfaces have been extensively studied experimentally, but the Schottky barrier height (SBH) theory at the metal/H-diamond interface has not been systematically investigated yet. In this work, SBHs of interfaces formed by H-diamond (111) surfaces with 12 metals (Y, Sc, Mg, Ag, Al, Ti, Cu, Co, Pd, Ni, Au and Pt) are investigated using ab-initio calculations. The fitted curve of the SBH with respect to the metal work function is obtained with a Fermi pinning factor of 0.30, which is close to the empirical value of 0.36. Due to the negative electron affinity of H-diamond, Schottky contacts can be formed with low work function metals, which is useful in device design to regulate the SBH and it is relatively easier to form ohmic contacts with high work function metals, leading to low contact resistances. Our work sheds light on the rational design of diamond-based semiconductor devices with low contact resistances. [ABSTRACT FROM AUTHOR]

The development of deposition processes for metal carbide thin films is rapidly advancing, driven by their potential for applications including catalysis, batteries, and semiconductor devices. Within this landscape, atomic layer deposition (ALD) offers exceptional conformality, uniformity, and thickness control on spatially complex structures. This paper presents a comprehensive study on the thermal ALD of MoCx with MoCl5 and 1,4‐bis(trimethylgermyl)‐1,4‐dihydropyrazine [(Me3Ge)2DHP] as precursors, focusing on the functional properties and characterization of the films. The depositions are conducted at 200–300 °C and very smooth films with RMS Rq ≈0.3–0.6 nm on Si, TiN, and HfO2 substrates are obtained. The process has a high growth rate of 1.5 Å cycle−1 and the films appear to be continuous already after 5 cycles. The films are conductive even at thicknesses below 5 nm, and films above 18 nm exhibit superconductivity up to 4.4 K. In lieu of suitable references, Raman modes for molybdenum carbides and nitrides are calculated and X‐ray diffraction and X‐ray photoelectron spectroscopy are used for phase analysis. [ABSTRACT FROM AUTHOR]

In the case of low-dimensional semiconductor devices, the basic physical properties of materials can be measured through device manufacturing using single crystal synthesis and exfoliation, but for expansion into various application fields, technology that can synthesize the material itself directly on the substrate is needed. For multi-composition low-dimensional semiconductor materials like Nb2Pd3Se8, the physical characteristics of constituent elements differ, making direct growth control on a substrate extremely challenging. This study successfully synthesized Nb2Pd3Se8 wires using different metal precursors (niobium and palladium) through liquid precursor–intermediated chemical vapor deposition (LPI-CVD). By adjusting the concentration of the liquid precursor and the synthesis temperature, the reproducible growth of Nb2Pd3Se8 wires was achieved, ranging in lengths from 2.29 to 15.04 μm. It was confirmed that PdSe2 is initially synthesized at lower temperatures (below 620 °C), and at temperatures above 620 °C, this PdSe2 transforms into Pd17Se15. Nb2Pd3Se8 is synthesized from the Pd17Se15 at these higher temperatures. X-ray diffraction (XRD) analysis revealed that the wires exhibit a preferred orientation along the (210) plane. Electronic device fabrication using these wires demonstrated their application potential as n-type semiconductors. Field-effect transistor (FET) measurements revealed remarkable performance, with an Ion/Ioff ratio of 575 and an electron mobility of 2.03 cm2 V−1 s−1. LPI-CVD provides a promising strategy for synthesizing ternary chalcogenide materials, opening possibilities for exploring diverse ternary phases. This study highlights the importance of controllability, reproducibility, and FET performance in growing Nb2Pd3Se8 wires via the CVD system, thereby paving the way for integrated applications and facilitating mixed-dimensional studies with other nanomaterials. [ABSTRACT FROM AUTHOR]

Lanthanide ions doped in perovskite (LIDP) nanocrystals (NCs) provide an effective way to utilize the emission of lanthanide metals in a solution‐processable way, combining the theoretical photoluminance quantum yield (PLQY) of ≈200%. To utilize advantages, LIDP‐NCs have inspired studies exploring the fundamental physics of energy transfer, including the up‐conversion or down‐conversion process, and the optoelectronic applications of solar cells and white light‐emitting didoes. This review broadens the scope of LIDP nanocrystal matrix semiconductors in electroluminescence devices in the near‐infrared (NIR) range (>900 nm). A research is summarized on the synergistic effect of lanthanide ions and perovskite matrix in the near‐infrared region, and discuss from the perspective of fabrication of lanthanide‐based electroluminescent devices using perovskite materials as the matrix. The multiple optical transitions, bandgap tunability, and quantum‐cutting effect to provide a tutorial on understanding LIDP‐NCs are started. The details of synthesizing LIDP materials and aim to lay the foundation for preparing NIR electroluminescent devices with high efficiency and application value are then illustrated. The scientific issues that limit the performance of LIDP NCs‐based electroluminescent devices and discuss the potential strategies for the future development of LIDP material are focused on. [ABSTRACT FROM AUTHOR]

The charge carrier mobility in tris(4‐carbazoyl‐9‐ylphenyl)amine (TCTA), a host and hole transport material typically used in organic light‐emitting diodes (OLEDs), is measured using charge carrier electrical injection metal–insulator–semiconductor charge extraction by linearly increasing voltage (i‐MIS‐CELIV). By employing the injection current i‐MIS‐CELIV method, charge transport at time scales shorter than the transit times typically observed in standard MIS‐CELIV is measured. The i‐MIS‐CELIV technique enables the experimental measurement of unequilibrated and pretrapped charge carriers. Through a comparison of injection and extraction current transients obtained from i‐MIS‐CELIV and MIS‐CELIV, it is concluded that hole trapping is negligible in evaporated neat films of TCTA within the time‐scales relevant to the operational conditions of optoelectronic devices, such as OLEDs. Furthermore, photocarrier generation in conjunction with i‐MIS‐CELIV (photo‐i‐MIS‐CELIV) to quantify the properties of charge injection from the electrode to the semiconductor of the MIS devices is utilized. Based on the photo‐i‐MIS‐CELIV measurements, it is observed that the contact resistance does not limit the injection current at the TCTA/molybdenum oxide/silver interface. Therefore, when TCTA is employed as the hole transport/electron‐blocking layer in OLEDs, it does not significantly reduce the injection current and remains compatible with the high injection current densities required for efficient OLED operation. [ABSTRACT FROM AUTHOR]

A rigorous model in the far-field for the calculation of the broadband reflectance of multilayered structured semiconductor surfaces is introduced and is applied on semiconductor wafers with single or multiple vias or trenches. The model is based on four assumptions: (1) the wafer can be divided into units containing a single via or trench, (2) each unit can be divided into subregions, (3) the reflectance of each subregion can be simulated by the reflectance of a layer stack, and (4) the reflectance of the unit can be composed from the reflectance of each subregion, weighted with the ratio of the subregion area to the unit area, and multiplied with a phase factor that considers the depth (or height) relative to the wafer surface. As in the model the via and the wafer surface are clearly separated it is possible to study transparent coatings on the wafer surface as well as transparent fillings of the via or trench. The influence of inclined walls and a curved via bottom is investigated. Dependences upon the via depth and the ratio of via and unit area are shown and discussed. [ABSTRACT FROM AUTHOR]

Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor manufacturing, enabling the creation of high-resolution patterns essential for advanced microelectronics. This review highlights recent progress in inorganic metal-oxide-based photoresists, with a focus on their applications in EUVL. The unique properties of zinc-based, tin–oxygen, and IVB group inorganic photoresists are examined, showcasing their enhanced chemical reactivity and precise patterning capabilities. Key advancements include the development of zinc oxide and tin oxide nanoparticles, which demonstrate significant improvements in photon absorption and solubility under extreme ultraviolet exposure. Additionally, the review delves into the photochemical reactions of tin–oxygen clusters and the influence of various ligands on film density and cross-linking. The findings suggest that these inorganic photoresists not only improve photolithographic performance but also hold potential for broader applications, such as pyroelectric infrared sensors and 3D printing. Future research directions are outlined, including the optimization of process parameters, the exploration of new ligand and metal combinations, and the evaluation of the environmental benefits of inorganic photoresists over traditional organic ones. These advancements are poised to further enhance the resolution and patterning capabilities required for next-generation semiconductor devices. [ABSTRACT FROM AUTHOR]

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Nanoscale vacuum semiconductor devices utilize vacuum as an electron transport medium, offering the advantages of rapid response and immunity to extreme environments. In this study, we present a nanoscale vertical channel vacuum triode with a side-gate structure. The device employs vacuum as the gate insulating medium, which enhances its reliability compared to conventional vertical structure vacuum triodes. Furthermore, the side-gate design reduces the gate input capacitance to approximately 10−18 F, making it more suitable for high-frequency operations. We systematically investigate the impact of structural dimensions on device performance. Simulation results demonstrate that when the dielectric layer thickness is around 35 nm, the maximum transconductance of the device reaches 1.23 μS. Increasing the gate dielectric layer thickness leads to an increase in cut-off frequency but decreases channel current. Smaller gap widths between the cathode and gate result in higher transconductance and cut-off frequencies. However, when the gap width is less than 40 nm, noticeable gate leakage currents occur. Introducing negative offset of alignment between the anode and channel edge enhances transconductance and cut-off frequency but may introduce stability issues. These research findings provide valuable insights for developing high-frequency vacuum triode devices. [ABSTRACT FROM AUTHOR]

The facile spin coating fabrication of high‐dielectric‐constant (high‐k) multicomponent (Al,Ti,V,Zr,Hf)Ox films with an equivalent oxide thickness of ≈0.95 nm and the investigation of their thermal stability and dielectric and electrical properties of the resulting advanced metal–oxide–semiconductor (MOS)‐based electronic devices are reported in this study. Various heating conditions, including drying following spin coating, annealing after drying, and forming gas annealing, were investigated to optimize the quality of the films and reduce film defects. The favorable film‐based MOS devices exhibited robust capacitance–voltage (C–V) and current–voltage (I–V) characteristics with a remarkable k value of approximately 62 at 1 kHz. The thermal stability of the films was affirmed through a rapid thermal annealing treatment at 900°C for 5 s and observation of nondegraded C–V and I–V curves. The electrical performance of the resulting MOS field‐effect transistors (MOSFETs), including a threshold voltage of 0.4 V, an on/off ratio of 106, a saturated mobility of 40.1 cm2 V−1 s−1, and a subthreshold swing of 66.7 mV dec−1, was obtained. Moreover, hole‐ and electron‐trapping measurements through negative and positive gate bias stress instabilities, respectively, indicate the reliable performance of our MOSFETs. Our results imply that solution‐based processes are promising for fabricating fundamental semiconductor devices. [ABSTRACT FROM AUTHOR]

Carrier dynamics detection in different dimensions (space, time, and energy) with high resolutions plays a pivotal role in the development of modern semiconductor devices, especially in low‐dimensional, high‐speed, and ultrasensitive devices. Here, a femtosecond electron‐based versatile microscopy is reported that combines scanning ultrafast electron microscopy (SUEM) imaging and time‐resolved cathodoluminescence (TRCL) detection, which allows for visualizing and decoupling different dynamic processes of carriers involved in surface and bulk in semiconductors with unprecedented spatiotemporal and energetic resolutions. The achieved spatial resolution is better than 10 nm, and the temporal resolutions for SUEM imaging and TRCL detection are ≈500 fs and ≈4.5 ps, respectively, representing state‐of‐the‐art performance. To demonstrate its unique capability, the surface and bulk carrier dynamics involved in n‐type gallium arsenide (GaAs) are directly tracked and distinguished. It is revealed, in real time and space, that hot carrier cooling, defect trapping, and interband‐/defect‐assisted radiative recombination in the energy domain result in ordinal super‐diffusion, localization, and sub‐diffusion of carriers at the surface, elucidating the crucial role of surface states on carrier dynamics. The study not only gives a comprehensive physical picture of carrier dynamics in GaAs, but also provides a powerful platform for exploring complex carrier dynamics in semiconductors for promoting their device performance. [ABSTRACT FROM AUTHOR]

The technology transfer of terahertz wireless communication from research laboratories to commercial applications is a global strategic achievement currently pursued to match the ever-increasing demand for high-speed communication. The use of commercial integrated electronics for the detection of THz waves is an intriguing challenge which has enticed great interest in the scientific research community. Rapid progress in this field has led to the exploitation of THz direct detection using standard CMOS technology based on the so-called self-mixing effect. Our research, stemming out of a collaboration between Sapienza University of Rome and STMicroelectronics company, is focused on the complete design process of a THz rectifier, realized using 50 nm ST B55 CMOS technology. In this paper, we report the optimization process of a case-study receiver, aimed to demonstrate the feasibility of direct demodulation of the transmitted OOK signal. A relatively limited bandwidth extension is considered since the device will be included in a system adopting a radiation source with a limited band. The design refers to a specific technology, the 60 nm MOS in B55X ST; nevertheless, the proposed optimization procedure can be applied in principle to any MOS device. Several aspects of the rectification process and of the receiver design are investigated by combining different numerical simulation methodologies. The direct representation of the rectification effect through the equivalent circuit of the detector is provided, which allows for the investigation of the detector–amplifier coupling, and the computation of output noise equivalent power. Numerical results are presented and used as the basis for the optimization of the receiver parameters. [ABSTRACT FROM AUTHOR]

In this paper, a novel method is presented to estimate the parameters of the SPICE-like multi-domain model of light-emitting diode (LED) chips developed and proposed by the Delphi4LED project. The proposed estimation algorithm employs a modified Nelder-Mead method, as the gradient methods and the original version of Nelder-Mead fail to properly handle this problem. By using the new, modified Nelder-Mead method presented in this paper the parameters are estimated faster, compared to the previously used brute-force algorithm-based parameter extraction process, allowing the same precision of the SPICE-like multi-domain LED model. The modification of the parameter extraction procedure also allows speeding up and simplifying the multi-domain LED characterization method proposed earlier by the Delphi4LED project. The speed and robustness of the new model eliminate the need for time-consuming junction temperature control during measurements by employing a novel extraction strategy that seeks the global minimum, rather than relying on the composition of marginal minima. [ABSTRACT FROM AUTHOR]

Using the example of III–V nitrides crystallizing in a wurtzite structure (GaN, AlN, and InN), this review presents the special role of hydrostatic pressure in studying semiconductor properties. Starting with a brief description of high-pressure techniques for growing bulk crystals of nitride compounds, we focus on the use of hydrostatic pressure techniques in both experimental and theoretical investigations of the special properties of nitride compounds, their alloys, and quantum structures. The bandgap pressure coefficient is one of the most important parameters in semiconductor physics. Trends in its behavior in nitride structures, together with trends in pressure-induced phase transitions, are discussed in the context of the behavior of other typical semiconductors. Using InN as an example, the pressure-dependent effects typical of very narrow bandgap materials, such as conduction band filling or effective mass behavior, are described. Interesting aspects of bandgap bowing in In-containing nitride alloys, including pressure and clustering effects, are discussed. Hydrostatic pressure also plays an important role in the study of native defects and impurities, as illustrated by the example of nitride compounds and their quantum structures. Experiments and theoretical studies on this topic are reviewed. Special attention is given to hydrostatic pressure and strain effects in short periods of nitride superlattices. The explanation of the discrepancies between theory and experiment in optical emission and its pressure dependence from InN/GaN superlattices led to the well-documented conclusion that InN growth on the GaN substrate is not possible. The built-in electric field present in InGaN/GaN and AlGaN/GaN heterostructures crystallizing in a wurtzite lattice can reach several MV/cm, leading to drastic changes in the physical properties of these structures and related devices. It is shown how hydrostatic pressure modifies these effects and helps to understand their origin. [ABSTRACT FROM AUTHOR]

The out-of-control action plan (OCAP) is crucial in the wafer probing process of semiconductor manufacturing as it systematically addresses and corrects deviations, ensuring the high quality and reliability of semiconductor devices. However, the traditional OCAP involves many redundant and complicated processes after failures occur on production lines, which can delay production and escalate costs. To overcome the traditional OCAP's limitations, this paper proposes a novel OCAP aimed at enhancing the wafer probing process in semiconductor manufacturing. The proposed OCAP integrates proactive measures such as preventive maintenance and advanced monitoring technologies, which are tested and verified through a comprehensive experimental setup. Implementing the novel OCAP in a case company's production line reduced machine downtime by over 24 h per week and increased wafer production by about 23 wafers per week. Additionally, probe test yield improved by an average of 1.1%, demonstrating the effectiveness of the proposed method. This paper not only explores the implementation of the novel OCAP but also compares it with the traditional OCAP, highlighting significant improvements in efficiency and production output. The results underscore the potential of advanced OCAP to enhance manufacturing processes by reducing dependency on human judgment, thus lowering the likelihood of errors and improving overall equipment effectiveness (OEE). [ABSTRACT FROM AUTHOR]

Wide-bandgap semiconductors are regarded as preferred materials for preparing semiconductor conversion devices in betavoltaic batteries due to their high theoretical conversion efficiency (ηc). However, there are a few comprehensive analytical studies on why the experimental values of ηc are generally much lower than the theoretical limit of ηc (ηc-limit) and how to improve ηc and its stability. In this work, combined with the energy deposition distributions of Ti3H2, 63Ni, and 147Pm2O3 radioactive sources in SiC obtained from Monte Carlo simulations, a multi-physical mechanism, multi-parameter coupling numerical model was established. This model can comprehensively analyze the output characteristics of betavoltaic batteries under the influence of actual device structural and material parameter changes. Our results show that changes in structural and material parameters cause significant variations in the collection efficiency (Q) of the radiation-generated electron–hole pair (RG-EHP). Considering structural parameters are easy to control, instabilities in actual SiC material parameters, which include electron diffusion length (Ln), hole diffusion length (Lp), and surface recombination velocity (S), are the main reason that ηc fluctuates significantly and is generally far lower than ηc-limit. Due to differences in the distribution of RG-EHP produced by different radioactive sources in SiC, the dominant parameters causing ηc fluctuations differ. By analyzing differences in recombination loss mechanisms under different radioactive sources, the device structures were designed in a targeted manner to make ηc closer to ηc-limit. Meanwhile, when the SiC material quality fluctuates, the stability of ηc increases by 58.5%, 35.3%, and 48.2% under Ti3H2, 63Ni, and 147Pm2O3, respectively. [ABSTRACT FROM AUTHOR]

For the first time, a new configuration of label-free junctionless semiconductor device is proposed to boost sensitivity in the identification of biomolecule specifies. Instead of creating the nanocavity inside the gate oxide, the nanocavity is created in the channel region which is very useful for the SOI junctionless technology based biodevice having a high current in all operating modes. For better control of the conduction mechanism, a hole trench is created under the channel region just inside the buried oxide. This will help to modulate the energy bands terminating in enhancing the sensing performance. Unlike the conventional biosensors needing a large-scale gate oxide thickness for trapping the biomolecules, the proposed biosensor can work for very low gate oxide thickness. The different biomolecules such as Biotin, Protein A, Bacteriophage T7, and Apomyoglobin have been utilized as targeted biomolecules for evaluating the sensitivity. Comparing the proposed biosensor with the conventional and other biosensors showed an enhanced sensing performance. Practical related issues during the process of sensing in terms of fill factor percentage, steric hindrance of biomolecules, and the charges of biomolecules have been focused in the recommended biodevice. All the results exhibited high superiority of performance of the suggested biodevice as compared to the conventional biosensor. [ABSTRACT FROM AUTHOR]

Energy level alignments are crucial for designing high-performance semiconductor devices. However, the reported energy levels, especially the lowest unoccupied energy levels (LUMOs), exhibit significant variability for a given molecular compound. This variability often leads to misunderstanding of device working mechanisms. In this study, single-carrier devices with organic/interlayer/organic structures are proposed to probe the energy level alignments at organic–organic heterojunctions. It is observed that carrier transport characteristics deviate significantly depending on charge scattering or trapping. Five organic molecules, including 1, 3, 5-tri(m-pyrid-3-ylphenyl)benzene (TmPyPB), 4, 4′-bis(arbazole-9-y1)biphenyl (CBP), 2, 2′, 2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi), bis[2-(2-hydroxyphenyl)-pyridine] beryllium (Bepp2), and tris(8-hydroxyquinolinato)aluminum (Alq3), are utilized to test the method. The deduced LUMO level order for these materials is found to deviate significantly from reported values. Furthermore, the effect of differences in the energy level arrangement on the performance of electroluminescent devices is investigated. This work suggests that determining LUMO energy alignments via single-carrier analysis is a valuable method for understanding device working mechanisms. [ABSTRACT FROM AUTHOR]

As this Special Section goes to publication, semiconductor manufacturing in the United Status, and globally, continues to expand at a seemingly torrid pace. Assisted by government funding and driven in part by artificial intelligence workloads that gobble up increasing amounts of data center computing capacity, Intel and TSMC fabs are going up in Arizona, TI and Samsung fabs are coming to Texas, and Micron has big plans in New York. Unfortunately, just like those flying cars we were once promised, AI has not yet eliminated the need for the skilled trades and engineers required to build and successfully operate a fab. As a result, workforce development has become an important part of the increasingly complex semiconductor manufacturing process: Where are the thousands of engineers the semiconductor industry needs to staff these new fabs going to come from? How can we make more students excited about science and engineering? While the Guest Editors don’t have all the answers, we are happy that ASMC contributes to the solution by actively supporting student presentations and posters and annually recognizing the best student paper of the conference. And, maybe some day, the artificial intelligence systems that semiconductor manufacturing has enabled will give us those Star Wars or Star Trek robots that can build fabs and make chips too. [ABSTRACT FROM AUTHOR]

Three dimensional Not-And (3D NAND) flash memory devices are scaling in the vertical direction to more than 200 oxide/sacrificial wordline nitride layers to further increase storage capacity and enhance energy efficiency. The accurate measurement of the thicknesses of these layers is critical to controlling stress-induced wafer warping and pattern distortion. While traditional optical metrology in the UV-vis-NIR range offers a non-destructive inline solution for high volume manufacturing, we demonstrate in this paper, that mid-IR metrology has advantages in de-correlating oxide and nitride thicknesses owing to their unique absorption signatures. Furthermore, because of the depths sensitivity of oxide and nitride absorptions, the simulated measurement results show the ability to differentiate thickness variations in the vertical zones. Good blind test results were obtained with a machine learning model trained on pseudo-references and pseudo spectra with added skew. [ABSTRACT FROM AUTHOR]

Semantic segmentation for automated measurement in semiconductor manufacturing, specifically with wafer transmission electron microscopy (TEM) images, poses significant challenges because of the difficulty of acquisition, prevalent noise, and ambiguous object boundaries. However, prior studies focused on broadening the application of semantic segmentation for automated measurement without considering the specific intricacies of TEM images. In this study, we propose a wafer TEM images-specific semantic segmentation and transfer learning (WTEM-SST) framework to address these issues. The proposed WTEM-SST involves a pre-training stage, wafer TEM-specific data augmentation methods, and a boundary-focused loss function. The pre-training stage addresses the difficulty of collecting and annotating wafer TEM images, followed by fine-tuning for process-specific segmentation models. Our data augmentation techniques mitigate challenges related to limited training samples, lots of noise, and unclear boundaries. The boundary-focused loss makes the model more precise in boundary recognition during fine-tuning. We demonstrate that WTEM-SST outperforms conventional segmentation models, with our studies highlighting the effectiveness of the three components in WTEM-SST. [ABSTRACT FROM AUTHOR]

The semiconductor industry is the core industry of the information age. As a key link in the semiconductor industry, wafer fabrication plays a key role in its development. In the testing stage of the wafer, each die of the wafer is detected and marked, and a wafer map with a certain spatial pattern can be formed. The analysis and classification of these spatial patterns can identify the cause of wafer defects, thereby improving production yield. However, as wafer size increases, line widths become smaller, etc., the probability of a mixed defect mode wafer pattern increases. Moreover, the mixed defect mode wafer map is more difficult to identify and classify than the single defect mode wafer map. Therefore, this paper proposes an improved deep convolutional neural network (DCNN) structure model for the recognition and classification of mixed defect pattern wafer maps. From the perspective of increasing the width of the DCNN, the improved network structure can avoid problems such as over-fitting and limited extraction of features due to the continuous deepening of the DCNN. The network is called Multi-Path DCNN (MP-DCNN) structure. The experimental results show that the proposed Multi-Path DCNN structure has better performance and higher classification accuracy than existing methods. [ABSTRACT FROM AUTHOR]

Chemical mechanical planarization (CMP) is vital for ensuring chip fabrication uniformity at nanometer scales. The emergence of a series of phenomenological CMP process models (Stine et al., 1997; Gbondo-Tugbawa, 2002; Xie, 2007; Vasilev, 2011) suggests that the existing model upgrade approach is largely based on a change in phenomenological model assumptions, demanding deep insights into complex process mechanisms and protracted period for accuracy improvements. To tackle this issue, this paper proposes a decoupling regression strategy for model upgrades. This strategy employs a data-driven approach to enhance the coupling relationships within the model, facilitating continuous improvement of simulation accuracy based on the existing model. It is capable of achieving improvements in model accuracy even in scenarios where modelers lack insight into complex process mechanisms. We validate our method by upgrading the Density Step Height (DSH) model to the Extend-DSH model to address poor erosion predictions at the 28nm node. Comparing model predictions with silicon data reveals that the Extend-DSH model aligns better with the measured data, reducing the root mean square error from 159.31Å to 6.89Å and increasing the coefficient of determination from -0.83561 to 0.6058, showcasing the effectiveness of the proposed chip-level CMP model upgrade method grounded in the decoupling regression strategy. [ABSTRACT FROM AUTHOR]

Detecting wafer map anomalies is crucial for preventing yield loss in semiconductor fabrication, although intricate patterns and resource-intensive labeled data prerequisites hinder precise deep-learning segmentation. This paper presents an innovative, unsupervised method for detecting pixel-level anomalies in wafer maps. It utilizes an efficient dual attention module with a knowledge distillation network to learn defect distributions without anomalies. Knowledge transfer is achieved by distilling information from a pre-trained teacher into a student network with similar architecture, except an efficient dual attention module is incorporated atop the teacher network’s feature pyramid hierarchies, which enhances feature representation and segmentation across pyramid hierarchies that selectively emphasize relevant and discard irrelevant features by capturing contextual associations in positional and channel dimensions. Furthermore, it enables student networks to acquire an improved knowledge of hierarchical features to identify anomalies across different scales accurately. The dissimilarity in feature pyramids acts as a discriminatory function, predicting the likelihood of an abnormality, resulting in highly accurate pixel-level anomaly detection. Consequently, our proposed method excelled on the WM-811K and MixedWM38 datasets, achieving AUROC, AUPR, AUPRO, and F1-Scores of (99.65%, 99.35%), (97.31%, 92.13%), (90.76%, 84.66%) respectively, alongside an inference speed of 3.204 FPS, showcasing its high precision and efficiency. [ABSTRACT FROM AUTHOR]

It is known that the determination of the good-dice-in-bad-neighborhoods (GDBNs) has been regarded as an effective technique to reduce the value of the defect parts per million (DPPM) by identifying and rejecting the suspicious dice even though they are good in testing. Instead of examining eight immediate neighbors in a small-sized $3\times 3$ window or exploiting simple linear regression, a large-sized window can be used to recognize the broad-sighted neighborhoods and accurately infer the suspiciousness level for any given die. In this paper, the artificial neural networks (ANN)-based method can be proposed to solve the GDBN identification. Furthermore, two enhanced techniques can be further presented to improve the inference accuracy of the original ANN-based method by considering the variation of the time-dependent wafer patterns and the wafer-to-wafer relationship between two adjacent wafers. After applying the two enhanced techniques, the business profits can be improved in the new ANN-based method. Various experiments on two datasets clearly reveal the superiority of the proposed ANN-based method over the other existing methods. In addition to the reduction of the DPPM value, the new ANN-based method can achieve the 1.5X–2X better reduction in the cost of the return merchandise authorization (RMA). On the other hand, the experimental results show that the similar result can also be obtained in the other lower-yield products. By using the new ANN-based method, the relationships on bad dice cross wafers can be captured and the highly-accurate inference results can be simultaneously maintained. [ABSTRACT FROM AUTHOR]

The heterostructure of two‐dimensional transition metal dichalcogenide (TMDC) has garnered extensive attention, for the junction is the building block of a semiconductor device. However, the controllable synthesis of TMDC heterostructures of different transition metals and different chalcogen elements is still challenging because of the etching by atom substitution during the chemical vapor deposition (CVD) process. Here, a Mo─O transition state with lower energy is introduced to the edge of an as‐grown MoSe2 by using ultraviolet ozone treatment, to prevent the fast atom substitution of S for Se, and enable a stable growth of WS2/MoSe2 lateral heterostructure. A polymer‐free transfer method is developed based on capillary interaction, and atomic structure characterization confirms the high‐quality WS2/MoSe2 lateral heterostructure. The WS2/MoSe2 lateral heterostructure photodetector exhibits superior photoresponse compared to WS2 and MoSe2 devices, with a responsivity of 21.87 A W−1 and a detectivity of 4.2 × 1012 Jones at 350 nm. Kelvin probe force microscopy result reveals that the built‐in electric field within the heterojunction facilitates the effective separation of photogenerated electron‐hole pairs. This study carries profound implications for the CVD growth and polymer‐free transfer of TMDC heterostructures in photodetector applications. [ABSTRACT FROM AUTHOR]

The hybrid photodetector (HPD) is a photomultiplier tube combined with the semiconductor device within the vacuum. The photoelectrons emitted from the photocathode directly hit the semiconductor enabling efficient electron multiplication with low noise and symmetric output pulse. These properties make a hybrid photodetector a good solution for photon-counting applications. At the Satellite Laser Ranging Station of the Institute of Astronomy at the University of Latvia, the hybrid photodetector characteristics were evaluated for SLR applications, including multiphoton mode and time-walk compensation. [ABSTRACT FROM AUTHOR]