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This paper presents a compact 0.18- μm CMOS wideband gain-flattened low noise amplifier (LNA). The low noise characteristic of the LNA is achieved by the noise canceling technique and the gain flatness is enhanced by the gate-inductive gain-peaking technique. In addition to extending flat-gain bandwidth, the proposed gain-peaking technique results in better wideband noise canceling and quick gain roll-off outside the desired signal band to reject interference. Without using any passive inductor, the core size of the fully-integrated CMOS LNA circuit is only 145 μm × 247 μm. The measured gain and noise figure of the CMOS LNA are 16.4 dB and 2.1 dB, respectively. The gain variation of the LNA is ±0.4 dB from 50 to 900 MHz. Operated at 1.8 V, the chip consumes 14.4 mW of power. [ABSTRACT FROM AUTHOR]

This paper presents an amplitude-shift-keying (ASK) demodulator for RF identification tags, which can be embedded on panel displays. The ASK demodulator was implemented in 3-μm low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) technology. Since the threshold voltages of LTPS TFTs are higher than CMOS transistors, the conventional demod- ulator implementation will degrade the demodulator sensitivity significantly. The novel full-wave demodulator circuit was proposed to resolve the issue of high threshold voltage and reduce the ripples of the demodulated envelope. Operated at 8 V, the demodulator consumes 1.6 mW of power. The input carrier frequency was tested up to 13.56 MHz, and the highest ASK modulated data rate is 100 kb/s. The circuit size of the LTPS TFT demodulator is 500 μm × 450 μm. [ABSTRACT FROM AUTHOR]

This letter presents the first RF frequency divider on glass to demonstrate the feasibility of system on display (SoD). The frequency divider is developed in 1P2M 3 mum low-temperature polycrystalline silicon (LTPS) thin-film transistor technology. The core cell of the LTPS direct injection-locked frequency divider is the single stage ring oscillator. The additional cross-coupled transistor pair increases the phase shift of the ring oscillator to meet the oscillation condition. The maximum locking range of the LTPS frequency divider is 2 MHz, and it can be operated from 120 Hz to 8 MHz with frequency tuning. Operated at 10 V, the frequency divider consumes 1.8 mW of power. The area of the frequency divider circuitry is 2.13 times 2.6 mm. [ABSTRACT FROM PUBLISHER]

This paper presents the design of a low-power ultra-wideband low noise amplifier in 0.18-mum CMOS technology. The inductive degeneration is applied to the conventional distributed amplifier design to reduce the broadband noise figure under low power operation condition. A common-source amplifier is cascaded to the distributed amplifier to improve the gain at high frequency and extend the bandwidth. Operated at 0.6V, the integrated UWB CMOS LNA consumes 7mW. The measured gain of the LNA is 10dB with the bandwidth from 2.7 to 9.1GHz. The input and output return loss is more than 10dB. The noise figure of the LNA varies from 3.8 to 6.9dB, with the average noise figure of 4.65dB. The low power consumption of this work leads to the excellent figure of gain-bandwidth product (GBP) per milliwatt [ABSTRACT FROM PUBLISHER]