1. Unraveling intrinsic mobility limits in two-dimensional (AlxGa1−x)2O3 alloys.
- Author
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Duan, Xinlei, lqbal, Safdar, Shi, Min, Wang, Bao, Liu, Linhua, and Yang, Jia-Yue
- Subjects
BOLTZMANN'S equation ,ELECTRON mobility ,TWO-dimensional electron gas ,ALLOYS ,ELECTRON gas ,CHARGE carrier mobility ,GALLIUM alloys ,GALLIUM - Abstract
β-(Al
x Ga1−x )2 O3 presents a diverse material characterization exhibiting exceptional electrical and optical properties. Considering the miniaturization of gallium oxide devices, two-dimensional (Alx Ga1−x )2 O3 alloys, as a critical component in the formation of two-dimensional electron gases, demand an in-depth examination of their carrier transport properties. Herein, we investigate the temperature-dependent carrier mobility and scattering mechanisms of quasi-two-dimensional (2D) (Alx Ga1−x )2 O3 (x ≤ 5) by solving the Boltzmann transport equation from first-principles. Anisotropic electron mobility of 2D (Alx Ga1−x )2 O3 is limited to 30−80 cm2 /Vs at room temperature, and it finds that the relatively large ion-clamped dielectric tensors (Δɛ) suggest a major scattering role for polar optical phonons. The mobility of 2D (Alx Ga1−x )2 is less than that of bulk β-(Alx Ga1−x )2 O3 and shows no quantum effects attributed to the dangling bonds on the surface. We further demonstrate that the bandgap of 2D (Alx Ga1−x )2 O3 decreases with the number of layers, and the electron localization function also shows an anisotropy. This work comprehensively interprets the scattering mechanism and unintentional doping intrinsic electron mobility of (Alx Ga1−x )2 O3 alloys, providing physical elaboration and alternative horizons for experimental synthesis, crystallographic investigations, and power device fabrication of 2D (Alx Ga1−x )2 O3 atomically thin layered systems. [ABSTRACT FROM AUTHOR]- Published
- 2024
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