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76 results on '"Wernersson, L. E."'

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1. Narrow gap nanowires: From nanotechnology to RF-circuits on Si.

2. Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric.

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3. Vertical nanowire III–V MOSFETs with improved high-frequency gain.

4. Vertical nanowire III–V MOSFETs with improved high‐frequency gain.

5. Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor.

6. A transmission line method for evaluation of vertical InAs nanowire contacts.

20. High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations.

21. Measurements of light absorption efficiency in InSb nanowires.

22. InAs hole inversion and bandgap interface state density of 2 × 1011 cm-2 eV-1 at HfO2/InAs interfaces.

25. InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices.

28. High‐frequency InGaAs tri‐gate MOSFETs with fmax of 400 GHz.

32. A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation.

34. Picosecond dynamics in a millimetre‐wave RTD–MOSFET wavelet generator.

35. Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric.

36. Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates.

37. Interface composition of InAs nanowires with Al2O3 and HfO2 thin films.

38. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2.

40. Drive current and threshold voltage control in vertical InAs wrap-gate transistors.

41. Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots.

42. Designed emitter states in resonant tunneling through quantum dots.

43. Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes.

44. High peak-to-valley ratios observed in InAs/InP resonant tunneling quantum dot stacks.

45. Lateral current-constriction in vertical devices using openings in buried lattices of metallic....

46. Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Type Tunnel FETs.

47. High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz.

49. Picosecond dynamics in a millimetre-wave RTD-MOSFET wavelet generator.