1. Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes.
- Author
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Myers, Daniel J., Wan Ying Ho, Iveland, Justin, Speck, James S., Weisbuch, Claude, Gelžinytė, Kristina, Martinelli, Lucio, and Peretti, Jacques
- Subjects
LIGHT emitting diodes ,QUANTUM efficiency ,ELECTRON emission ,ELECTRON distribution ,PHOTOEMISSION - Abstract
The measurement of the energy distribution of vacuum emitted electrons from InGaN/GaN lightemitting diodes (LEDs) has proven essential in understanding the efficiency loss mechanism known as droop. We report on the measurement and identification of a new low-energy feature in addition to the previously measured three peaks present in the electron emission spectrum from a forward biased LED. Photoemission measurements show that the two low-energy peaks correspond to photoemitted electrons from each of the p-contact metals, palladium and gold. We confirm that the mid and high-energy peaks are due to electrons which have transited the p-type region of the device and have been emitted from the semiconductor surface from the bulk ᴦ-valley or a high-energy side valley. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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