1. Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001).
- Author
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Ben Saddik, K., Fernández-Garrido, S., Volkov, R., Grandal, J., Borgardt, N., and García, B. J.
- Subjects
EPITAXY ,OPTOELECTRONIC devices ,MOLE fraction ,SURFACE morphology ,PHASE separation - Abstract
We investigated the chemical beam epitaxy of GaP 1 − x N x grown on nominally (001) -oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x ≈ 0.04 , it is possible to synthesize smooth and chemically homogeneous GaP 1 − x N x layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [ 110 ] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of { 113 } -faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (1 ¯ 1 ¯ 3). On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP 1 − x N x layers lattice matched to Si (x = 0.021) or even with N content up to x = 0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological–compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D–3D growth mode transition. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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