1. Short range atomic migration in amorphous silicon.
- Author
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Strauβ, F., Jerliu, B., Geue, T., Stahn, J., and Schmidt, H.
- Subjects
AMORPHOUS silicon ,ELECTRODIFFUSION ,NEUTRON reflectometry ,ENTHALPY of activation ,ARRHENIUS equation ,POINT defects ,ANNEALING of crystals - Abstract
Experiments on self-diffusion in amorphous silicon between 400 and 500 ℃ are presented, which were carried out by neutron reflectometry in combination with
29 Si/nat Si isotope multilayers. Short range diffusion is detected on a length scale of about 2nm, while long range diffusion is absent. Diffusivities are in the order of 10-19 -10-20 m²/s and decrease with increasing annealing time, reaching an undetectable low value for long annealing times. This behavior is strongly correlated to structural relaxation and can be explained as a result of point defect annihilation. Diffusivities for short annealing times of 60 s follow the Arrhenius law with an activation enthalpy of (0.74±0.21) eV, which is interpreted as the activation enthalpy of Si migration. [ABSTRACT FROM AUTHOR]- Published
- 2016
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