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Various helium-containing titanium films were deposited on Si substrates by magnetron sputtering under different helium/argon (He/Ar) ambiances. Helium concentrations and corresponding depth profiles in the Ti films are obtained by elastic recoil detection analysis (ERDA). X-ray diffraction (XRD) measurements are carried out to evaluate the crystallization of the titanium films. Vacancy-type defects and their depth profiles were revealed by slow positron beam analysis (SPBA). It is found that the defect-characteristic parameter S rises with the increment of the He/Ar flow ratios. The variation of S indicates the formation and evolution of various Herelated defects, with uniform distribution into the depth around 400 nm. [ABSTRACT FROM AUTHOR]