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Developments in IC fabrication, emerging high-reliability markets, and government regulations indicate potential for significant shifts in how reliability fits within IC development and product life-cycles. This survey takes a comprehensive look at trends in IC reliability and investigates the methods used to predict failures. A background overview of recent and expected advances in IC fabrication is provided, along with reliability requirements for different markets and review of key aging mechanisms affecting modern ICs. The survey of reliability trends captures the body of research examining degradation across process nodes, changes in transistor architecture, and changes to device materials. High-level analysis of conclusions reveals significant uncertainty with regards to many changes and a diverse range of topics warranting further research. A critical look at current reliability prediction methods used to characterize product reliability is followed by a survey of research developing novel prediction methods to enhance and improve on existing techniques. These topics come together to illustrate the state of IC reliability characterization and potential paths to overcome upcoming challenges. [ABSTRACT FROM AUTHOR]

Negative Bias Temperature Instability (NBTI) is one of the main ageing processes in MOSFET devices, and it is related among others to H diffusion within the SiO2 dielectric layer of the device. In this work we use molecular simulations to study the underlying mechanism that governs the diffusion of H within SiO2, and suggest how to modify the material to decrease it. The computed diffusion activation energies are in excellent agreement with existing experimental data, and the analysis of the diffusion paths reveals a H hopping mechanism governed by the same orientational constraints as proton exchange in bulk water. Based on this mechanism, we test a hypothetical NBTI ageing retarding modification based on a mechanical deformation of the SiO2 dielectric. Stretching of the material induces a rearrangement of the silicate units, increasing the O–O distance, and consequently the activation energy required for H diffusion. Hence, stretching of the semiconductor during the MOSFET manufacturing process could reduce significantly the NBTI-driven ageing of the devices. [ABSTRACT FROM AUTHOR]

This letter considers quantum random bit generators which use continuous wave (CW) or pulse lasers with Poisson characteristics. The statistical characteristics of randomly generated bits are investigated, and the efficiency of the random generators is analyzed via the bit rate. [ABSTRACT FROM AUTHOR]