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High-TC cuprate superconductors' growth conditions and their incompatibility with some of the most standard nanofabrication approaches make their large-scale integration with 2D materials (such as graphene, transition metal dichalcogenides, and other Van der Waals materials) much more difficult than for conventional, metallic superconductors. Here, we address this challenge and develop an approach based on pulsed laser deposition that allows the growth of the 2D semiconductor MoS2 on the archetypal high-TC superconductor YBa2Cu3O7−x. This yields functional heterostructures in which the individual constituents' properties are preserved and that show superconducting coupling across their interface. The developed approach paves the way for large-scale 2D semiconductor co-integration with high-TC superconductors toward the study and leverage of the superconducting proximity effect in hybrid devices. [ABSTRACT FROM AUTHOR]

We report on the growth of a ferromagnetic cobalt electrode by atomic layer deposition (ALD) and demonstrate it as a functional spin source in complete magnetic tunnel junctions (MTJs). Using an in situ protocol, we integrate a reference tunnel barrier on top of the ALD cobalt spin source stabilizing its metallic nature and allowing further characterization. The cobalt layer, grown in mbar conditions with chemical precursors, is assessed to be metallic and ferromagnetic using both x-ray photoelectron spectroscopy and superconducting quantum interference device magnetometry measurements. Atomic force microscopy tapping and conductive tip mode analyses reveal a very flat film with low roughness (0.2 nm RMS) with a high homogeneity of surface conductivity matching the best reference samples grown by sputtering. We finally evaluate its behavior in full MTJ spin valves, using a reference spin analyzer to highlight that the ALD grown layer is, indeed, spin polarized and can act as a functional spintronics electrode. This result opens the perspective of exploiting the benefits of ALD (such as the wide area low-cost process, extreme conformality, layer by layer growth of heterostructures, area selectivity, etc.) for spintronics applications. [ABSTRACT FROM AUTHOR]

We report spin transport in CVD graphene-based lateral spin valves using different magnetic contacts. We compared the spin signal amplitude measured on devices where the cobalt layer is directly in contact with the graphene to the one obtained using tunnel contacts. Although a sizeable spin signal (up to ∼2 Ω) is obtained with direct contacts, the signal is strongly enhanced (∼400 Ω) by inserting a tunnel barrier. In addition, we studied the resistance-area product (R.A) of a variety of contacts on CVD graphene. In particular, we compared the R.A products of alumina and magnesium oxide tunnel barriers grown by sputtering deposition of aluminum or magnesium and subsequent natural oxidation under pure oxygen atmosphere or by plasma. When using an alumina tunnel barrier on CVD graphene, the R.A product is high and exhibits a large dispersion. This dispersion can be highly reduced by using a magnesium oxide tunnel barrier, as for the R.A value. This study gives insight in the material quest for reproducible and efficient spin injection in CVD graphene. [ABSTRACT FROM AUTHOR]

Spintronic structures are extensively investigated for their spin–orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization of spin transmission. Here, we advance the analysis of ultrafast spin-charge conversion phenomena at ferromagnetic-transition metal interfaces due to their inverse spin-Hall effect properties. In particular, the intrinsic inverse spin-Hall effect of Pt-based systems and extrinsic inverse spin-Hall effect of Au:W and Au:Ta in NiFe/Au:(W,Ta) bilayers are investigated. The spin-charge conversion is probed by complementary techniques—ultrafast THz time-domain spectroscopy in the dynamic regime for THz pulse emission and ferromagnetic resonance spin-pumping measurements in the GHz regime in the steady state—to determine the role played by the material properties, resistivities, spin transmission at metallic interfaces, and spin-flip rates. These measurements show the correspondence between the THz time-domain spectroscopy and ferromagnetic spin-pumping for the different set of samples in term of the spin mixing conductance. The latter quantity is a critical parameter, determining the strength of the THz emission from spintronic interfaces. This is further supported by ab initio calculations, simulations, and analysis of the spin-diffusion and spin-relaxation of carriers within the multilayers in the time domain, permitting one to determine the main trends and the role of spin transmission at interfaces. This work illustrates that time-domain spectroscopy for spin-based THz emission is a powerful technique to probe spin-dynamics at active spintronic interfaces and to extract key material properties for spin-charge conversion. [ABSTRACT FROM AUTHOR]

We report on the large-scale integration of graphene layers over a FePd perpendicular magnetic anisotropy (PMA) platform, targeting further downscaling of spin circuits. An L10 FePd ordered alloy showing both high magneto-crystalline anisotropy and a low magnetic damping constant, is deposited by magnetron sputtering. The graphene layer is then grown on top of it by large-scale chemical vapor deposition. A step-by-step study, including structural and magnetic analyses by x-ray diffraction and Kerr microscopy, shows that the measured FePd properties are preserved after the graphene deposition process. This scheme provides a graphene protected perpendicular spin electrode showing resistance to oxidation, atomic flatness, stable crystallinity, and perpendicular magnetic properties. This, in turn, opens the way to the generalization of hybrid 2D-materials on optimized PMA platforms, sustaining the development of spintronics circuits based on perpendicular spin-sources as required, for instance, for perpendicular-magnetic random-access memory schemes. [ABSTRACT FROM AUTHOR]

We fabricated tunnel junctions containing clusters embedded in a thin insulating layer. Low-temperature dc transport measurements reveal typical Coulomb blockade features. We measured the differential capacitance at different dc voltages and frequencies of these samples in the Coulomb blockade regime. The differential capacitance is constant at low dc bias and increases by 35% above a threshold voltage. This behavior can be well understood using a simple model which takes into account the Coulomb blockade effect. Such measurements could be used as a probe of Coulomb blockade properties of clusters assemblies. This effect is also promising for the fabrication of capacitors whose capacitance can be changed by varying the applied voltage. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ MgO layer deposition is achieved by using a large-scale atomic layer deposition process with high nucleation density. Raman spectroscopy studies show that this layer protects the BP from degradation in ambient conditions, unlocking in particular the possibility to carry out usual lithographic fabrication steps. The resulting MgO/BP stack is then integrated in a device and probed electrically, confirming the tunnel properties of the ultrathin MgO contacts. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices. [ABSTRACT FROM AUTHOR]

Exfoliated black phosphorus is a 2D semiconductor with promising properties for electronics, spintronics, and optoelectronics. Nevertheless, its rapid degradation in air renders its integration and use in devices particularly challenging—even more so for smaller thicknesses for which the degradation rate is tremendously enhanced. In order to effectively protect the thinnest flakes, we present here an approach based on an in-situ dielectric capping to avoid all contact with air. Optical microscopy, Raman spectroscopy, and atomic force microscopy studies confirm that 1 nm of Al2O3 efficiently passivates exfoliated black phosphorus (below 5 layers) on Si/SiO2 substrates. Such an ultrathin and transparent passivation layer can act as a tunnel barrier allowing for black phosphorus devices processing without passivation layer removal. [ABSTRACT FROM AUTHOR]

Molecular spintronics is an effervescent field of research, which aims at combining spin physics and molecular nano-objects. In this article, we show that phthalocyanine molecules integrated in magnetic tunnel junctions (MTJs) can lead to magnetoresistance effects of different origins. We have investigated cobalt and manganese phthalocyanine molecule based magnetic tunnel junctions. CoPc MTJs exhibit both tunneling magnetoresistance (TMR) and tunneling anisotropic magnetoresistance (TAMR) effects of similar magnitude. However, for MnPc MTJs, a giant TAMR dominates with ratios up to ten thousands of percent. Strong features visible in the conductance suggest that spin–flip inelastic electron tunneling processes occur through the Mn atomic chain formed by the MnPc stacks. These results show that metallo-organic molecules could be used as a template to connect magnetic atomic chains or even a single magnetic atom in a solid-state device. [ABSTRACT FROM AUTHOR]

We report on the demonstration of ferromagnetic spin injectors for spintronics which are protected against oxidation through passivation by a single layer of graphene. The graphene monolayer is directly grown by catalytic chemical vapor deposition on pre-patterned nickel electrodes. X-ray photoelectron spectroscopy reveals that even with its monoatomic thickness, monolayer graphene still efficiently protects spin sources against oxidation in ambient air. The resulting single layer passivated electrodes are integrated into spin valves and demonstrated to act as spin polarizers. Strikingly, the atom-thick graphene layer is shown to be sufficient to induce a characteristic spin filtering effect evidenced through the sign reversal of the measured magnetoresistance. [ABSTRACT FROM AUTHOR]

Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-μm range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents. [ABSTRACT FROM PUBLISHER]

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions(MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer. [ABSTRACT FROM AUTHOR]

We report on the topographical and electrical characterisations of 1 nm thick Al2O3 dielectric films on graphene. The Al2O3 is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O2 atmosphere. The Al2O3 layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al2O3 by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed. [ABSTRACT FROM AUTHOR]

We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al2O3 and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up to 4-layer flakes was analyzed by Raman spectroscopy. This study reveals that for Al2O3 growth, the impact is moderate for a monolayer and decreases sharply for bilayers and above. In the case of MgO all the flakes underwent a strong amorphization. Moreover, this reveals that while single layer graphene is believed to offer the best spin transport properties, the better robustness of multilayer graphene may ultimately make it a better choice for spintronics devices. [ABSTRACT FROM AUTHOR]

We report on the fabrication and spin dependent tunneling studies of magnetic tunnel junctions (MTJs) grown on flexible organic substrates. We observe comparable tunneling magnetoresistance (TMR) effects in standard Co/Al2O3/Co MTJs grown on either buffered polyester based organic substrates or silicon wafers. Moreover we show that after twisting and bending the MTJs on flexible substrates the TMR magnitude is maintained which indicates that spin dependent tunneling properties are preserved. This demonstrates that MTJs based spintronics devices are compatible with embodied flexible organic electronics. [ABSTRACT FROM AUTHOR]

The growth of a nanocluster assembly on a processed AlOx and its electronic transport behavior are investigated. An Ar+ plasma was used in order to create defects of high trapping energy on an AlOx layer. This process promotes a shift of the cluster distribution towards smaller sizes and allows to sharpen it. In a second part, the authors show that the application of this techniqueto clusters inserted in a tunnel junction can lead to a dramatic increase in the temperature range over which Coulomb blockade can be observed. [ABSTRACT FROM AUTHOR]

We have fabricated nanometer-sized magnetic tunnel junctions using a conductive tip nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single-electron tunneling through a single 2.5 nm Au cluster. The observed magnetoresistance is the signature of spin conservation during the transport process through a nonmagnetic cluster. [ABSTRACT FROM AUTHOR]

We report on the elaboration and physical properties of fully epitaxial Fe3O4/Al2O3 bilayers to be included in magnetic tunnel junctions. Uncovered Fe3O4(111) single layers and bilayers were epitaxially grown onto sapphire (0001) substrates. Appropriate growth conditions lead to a stoichiometric Fe3O4 layer both at the Fe3O4/Al2O3 interface and on the whole thickness, as checked by in situ x-ray photoelectron spectroscopy and by the observation of the Verwey transition, respectively. Transmission electron microscopy demonstrates the epitaxial growth of a γ-Al2O3 layer on top of Fe3O4(111), which insulating properties have been monitored by conductive tip atomic force microscopy. [ABSTRACT FROM AUTHOR]

We report on the observation of magnetoresistance in a Sr[sub 2]FeMoO[sub 6] (SFMO)-based tunnel junction. This result is obtained by combining a three-step process for the growth of the Sr[sub 2]FeMoO[sub 6] layer by pulsed laser deposition with a technology allowing the definition of nanometer-sized junctions. A clear positive magnetoresistive signal of 50% is obtained at low temperature in a Sr[sub 2]FeMoO[sub 6]/SrTiO[sub 3]/Co junction. Since the SrTiO[sub 3]/Co interface is known to have a negative spin polarization of about 20%, this result yields a negative spin polarization of SFMO, which we find to amount to more than 85% in our film. This confirms the half-metallic character of this compound, predicted by band structure calculations. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Reports on the fabrication and properties of cobalt/alumina/iron oxide tunnel junctions. Magnetoresistance effects observed at room temperature and 4.2 K; Magnetoresistance's origination from the activation of tunneling channels through spin polarized states.