1. Band structure of germanium carbides for direct bandgap silicon photonics.
- Author
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Stephenson, C. A., O'Brien, W. A., Penninger, M. W., Schneider, W. F., Gillett-Kunnath, M., Zajicek, J., Yu, K. M., Kudrawiec, R., Stillwell, R. A., and Wistey, M. A.
- Subjects
GERMANIUM compounds ,ELECTRONIC band structure ,PHOTONIC band gap structures ,SILICON ,CARBIDES ,DENSITY functional theory - Abstract
Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge 1-xCx (x=0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge
0.998 C0.002 shows a bandgap reduction supporting these results. Growth of Ge0.998 C0.002 using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III-V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition. [ABSTRACT FROM AUTHOR]- Published
- 2016
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